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BR25S128GUZ-W_11

BR25S128GUZ-W_11

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    BR25S128GUZ-W_11 - High Reliability Series Serial EEPROM Series WL-CSP EEPROMs family - Rohm

  • 数据手册
  • 价格&库存
BR25S128GUZ-W_11 数据手册
High Reliability Series Serial EEPROM Series WL-CSP EEPROMs family SPI BUS BR25S128GUZ-W ●Description BR25S128GUZ-W is a 16K×8bit serial EEPROM of SPI BUS interface method. ●Features 1) High speed clock action up to 10MHz (Max.) 2) Wait function by HOLDB terminal 3) Part or whole of memory arrays settable as read only memory area by program 4) 1.7~5.5V single power source action most suitable for battery use 5) 64Byte page write mode useful for initial value write at factory shipment 6) For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) 7) Auto erase and auto end function at data rewrite 8) Low current consumption At write action (5.0V) : 1.5mA (Typ.) At read action (5.0V) : 1.0mA (Typ.) At standby action (5.0V) : 0.1μA (Typ.) 9) Address auto increment function at read action 10) Write mistake prevention function Write prohibition at power on Write prohibition by command code (WRDI) Write prohibition by WPB pin Write prohibition block setting by status registers (BP1, BP0) Write mistake prevention function at low voltage 11) VCSP35L2 Package 12) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0 13) Data kept for 40 years 14) Data rewrite up to 1,000,000 times No.11001JBT06 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/16 2011.11 - Rev.B BR25S128GUZ-W ●Absolute maximum ratings (Ta=25℃) Parameter Impressed voltage Permissible dissipation Storage temperature range Operating temperature range Terminal voltage Symbol Vcc Pd Tstg Topr - Limits -0.3~+6.5 VCSP35L2 220※ -65~+125 -40~+85 -0.3~Vcc+0.3※2 1 Technical Note ●Recommended action conditions Unit V mW ℃ ℃ V Parameter Power source voltage Input voltage Symbol Vcc VIN Limits 1.7~5.5 V 0~Vcc Unit ●Input / output capacity (Ta=25℃, frequency=5MHz) Parameter Input capacity ※1 Symbol Conditions Min. Max. Unit CIN VIN=GND - 8 pF COUT VOUT=GND - 8 ※1 Degradation is done at 4.5mW, for operation above 25℃. ※2 The Max value of Terminal Voltage is not over 6.5V. Output capacity※1 ●Memory cell characteristics (Ta=25℃ , Vcc=1.7V~5.5V) Limits Parameter Unit Min. Typ. Max. Number of data 1,000,000 Time - - rewrite times ※1 Data hold years※1 ※1 Not 100% TESTED. ※1 Not 100% TESTED. 40 - - Year ●Electrical characteristics (Unless otherwise specified, Ta=-40~+85℃, Vcc=1.7~5.5V) Limits Symb Parameter Unit ol Min. Typ. Max. “H” Input Voltage1 “L” Input Voltage1 “L” Output Voltage1 “L” Output Voltage2 “H” Output Voltage1 “H” Output Voltage2 Input Leakage Current Output Leakage Current VIH1 VIL1 VOL1 VOL2 VOH1 VOH2 ILI ILO ICC1 Operating Current Write ICC2 ICC3 ICC4 ICC5 ICC6 Operating Current Read ICC7 ICC8 ICC9 ICC10 Standby Current ISB 0.7xVcc -0.3 0 0 Vcc-0.2 Vcc-0.2 -1 -1 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Vcc+0.3 0.3xVcc 0.4 0.2 Vcc Vcc 1 1 0.5 1 2 1 1 1.5 2 2 4 8 2 V V V V V V μA μA mA mA mA mA mA mA mA mA mA mA μA 1.7≦Vcc≦5.5V 1.7≦Vcc≦5.5V Conditions IOL=2.1mA, 2.5≦Vcc
BR25S128GUZ-W_11 价格&库存

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