BR25S320FVM-WTR

Datasheet Serial EEPROM Series Standard EEPROM SPI BUS EEPROM BR25Sxxx-W Series (32K 64K 128K 256K) ●General Description BR25Sxxx-W series is a serial EEPROM of SPI BUS interface method ●Features „ High speed clock action up to 20MHz (Max.) „ Wait function by HOLDB terminal „ Part or whole of memory arrays settable as read only memory area by program „ 1.7V to 5.5V single power source action most suitable for battery use „ Page write mode useful for initial value write at factory shipment „ Highly reliable connection by Au pad and Au wire „ For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) „ Auto erase and auto end function at data rewrite „ Low current consumption ¾ At write action (5V) : 1.5mA (Typ.) ¾ At read action (5V) : 1.0mA (Typ.) ¾ At standby action (5V) : 0.1μA (Typ.) „ Address auto increment function at read action „ Write mistake prevention function ¾ Write prohibition at power on ¾ Write prohibition by command code (WRDI) ¾ Write prohibition by WP pin ¾ Write prohibition block setting by status registers (BP1, BP0) ¾ Write mistake prevention function at low voltage „ Data kept for 40 years „ Data rewrite up to 1,000,000 times „ Data at shipment Memory array: FFh Status register: WPEN, BP1, BP0 : 0 ●Page write Page Part Number ●Packages W(Typ.) x D(Typ.) x H(Max.) SOP8 TSSOP-B8 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm SOP- J8 TSSOP-B8J 4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm SSOP-B8 MSOP8 3.00mm x 6.40mm x 1.35mm 2.90mm x 4.00mm x 0.90mm VSON008X2030 2.00mm x 3.00mm x 0.60mm 32Byte 64Byte BR25S320-W BR25S640-W BR25S128-W BR25S256-W ●BR25Sxxx-W Series Capacity Bit format 32Kbit 4K×8 Power source voltage SOP8 SOP-J8 1.7V to 5.5V ● ● SSOP-B8 TSSOP-B8 MSOP8 ● ● ● ● ● ● 64Kbit 8K×8 1.7V to 5.5V ● ● ● ● 16K×8 1.7V to 5.5V ● ● ● ● 256Kbit 32K×8 1.7V to 5.5V ● ● www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. TSZ22111･14･001 VSON008 X2030 ● 128Kbit ○Product structure：Silicon monolithic integrated circuit TSSOP-B8J ○This product is not designed protection against radioactive rays 1/31 TSZ02201-0R2R0G100330-1-2 21.AUG.2012 Rev.001 Datasheet BR25Sxxx-W Series (32K 64K 128K 256K) ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Supply Voltage VCC -0.3 to +6.5 450 (SOP8) 450 (SOP-J8) 300 (SSOP-B8) Power Dissipation Pd 330 (TSSOP-B8) 310 (TSSOP-B8J) 310 (MSOP8) 300 (VSON008X2030) Storage Temperature Tstg －65 to +125 Operating Temperature Topr －40 to +85 Terminal Voltage ‐ -0.3 to Vcc+0.3 Unit V mW Remarks When using at Ta=25℃ When using at Ta=25℃ When using at Ta=25℃ When using at Ta=25℃ When using at Ta=25℃ When using at Ta=25℃ When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃. or higher 4.5mW to be reduced per 1℃. or higher 3.0mW to be reduced per 1℃. or higher 3.3mW to be reduced per 1℃. or higher 3.1mW to be reduced per 1℃. or higher 3.1mW to be reduced per 1℃. or higher 3.0mW to be reduced per 1℃. ℃ ℃ V ●Memory cell characteristics (Ta=25°C , Vcc=1.7V to 5.5V) Limits Parameter Min. Typ. Number of data rewrite times *1 1,000,000 Data hold years *1 40 - Max. - Unit Times Years *1 Not 100% TESTED ●Recommended Operating Ratings Parameter Symbol Power source voltage Vcc Input voltage VIN ●Input / output capacity (Ta=25°C, frequency=5MHz) Parameter Symbol Min. Input capacity *1 CIN － Output capacity *1 COUT － *1 Unit Ratings 1.7 to 5.5 0 to Vcc V Max. 8 8 Unit pF Conditions VIN=GND VOUT=GND Not 100% TESTED. ●Electrical characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.7V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. “H” Input Voltage1 VIH1 0.7xVcc － Vcc+0.3 V 1.7≦Vcc≦5.5V “L” Input Voltage1 VIL1 -0.3 － 0.3xVcc V 1.7≦Vcc≦5.5V “L” Output Voltage1 VOL1 0 － 0.4 V IOL=2.1mA, 2.5≦Vcc