Datasheet
Serial EEPROM Series Automotive EEPROM
125°C Operation SPI BUS EEPROM
BR35Hxxx-WC
(16K 32K 64K 128K)
General Description
BR35Hxxx-WC is a SPI BUS interface method serial EEPROM.
Features
Packages W(Typ) x D(Typ) x H(Max)
High Speed Clock Operation up to 5MHz(Max)
2.5V to 5.5V Single Power Source Operation most suitable for
Battery use.
Page Write Mode Useful for Initial Value at Factory Shipment.
Highly Reliable Connection by Au Pad and Au Wire.
For SPI Bus Interface (CPOL, CPHA)=(0,0),(1,1)
Auto Erase and Auto End Function at Data Rewrite.
Low Operating Current
¾
At Write Operation (5V): 0.6mA(Typ)
At Read Operation (5V): 1.3mA(Typ)
¾
¾
At Standby Operation (5V): 0.1µA(Typ)
Address Auto Increment Function at Read Operation.
Write Mistake Prevention Function
¾
Write Prohibition at Power on.
¾
Write Prohibition by Command Code (WRDI)
¾
Write Mistake Prevention Function at Low Voltage.
Data at Shipment Memory Array: FFh.
Data Retention : 50 Years(Ta≤125°C)
Endurance : 300,000 Cycles(Ta=125°C)
AEC-Q100 Qualified
SOP8
TSSOP-B8
5.00mm x 6.20mm x 1.71mm
3.00mm x 6.40mm x 1.20mm
SOP- J8
MSOP8
4.90mm x 6.00mm x 1.65mm
2.90mm x 4.00mm x 0.90mm
Page write
Number of pages
32Byte
64Byte
Product Number
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
BR35Hxxx-WC
Capacity
Bit Format
Product Name
Supply
Voltage
MSOP8
TSSOP-B8
SOP8
SOP-J8
16Kbit
2K×8
BR35H160-WC
2.5V to 5.5V
●
●
●
●
32Kbit
4K×8
BR35H320-WC
2.5V to 5.5V
●
●
●
●
64Kbit
8K×8
BR35H640-WC
2.5V to 5.5V
-
●
●
●
128Kbit
16Kx8
BR35H128-WC
2.5V to 5.5V
-
-
●
●
○Product structure：Silicon monolithic integrated circuit
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©2012 ROHM Co., Ltd. All rights reserved.
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○This product is not designed protection against radioactive rays
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Absolute Maximum Ratings (Ta=25°C)
Parameter
Impressed Voltage
Symbol
Vcc
Permissible
Dissipation
Limits
-0.3 to +6.5
0.56(SOP8)
0.56(SOP-J8)
0.41(TSSOP-B8)
0.38(MSOP8)
Unit
V
Tstg
-65 to +150
°C
Topr
-40 to +125
°C
-
-0.3 to Vcc +0.3
V
Pd
Storage
Temperature Range
Operating
Temperature Range
Terminal Voltage
Remarks
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
W
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
When using at Ta=25°C or higher, 3.3mW to be reduced per 1°C
When using at Ta=25°C or higher, 3.1mW to be reduced per 1°C
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings
Memory Cell Characteristics (Vcc=2.5V to 5.5V)
Limits
Parameter
Endurance (Note1)
Data Retention (Note1)
Min
1,000,000
500,000
300,000
100
60
50
Typ
-
Unit
Max
-
Times
Times
Times
Years
Years
Years
Condition
Ta≤85°C
Ta≤105°C
Ta≤125°C
Ta≤25°C
Ta≤105°C
Ta≤125°C
(Note1) Not 100% TESTED
Recommended Operating Ratings
Parameter
Supply Voltage
Input Voltage
Symbol
Vcc
VIN
Limits
2.5 to 5.5
0 to Vcc
Unit
V
Input / Output Capacitance (Ta=25°C, frequency=5MHz)
Parameter
(Note1)
Input Capacitance
Output Capacitance (Note1)
Symbol
Min
Max
Unit
Conditions
CIN
COUT
－
－
8
8
pF
VIN=GND
VOUT=GND
(Note1) Not 100% TESTED
Electrical Characteristics (Unless otherwise specified, Ta=-40°C to +125°C, Vcc=2.5V to 5.5V)
Parameter
Symbol
Limits
Min
Typ
Max
Unit
Conditions
“H” Input Voltage
VIH
0.7xVcc
－
Vcc+0.3
V
2.5V≤Vcc≤5.5V
“L” Input Voltage
VIL
-0.3
－
0.3xVcc
V
2.5V≤Vcc≤5.5V
“L” Output Voltage
VOL
0
－
0.4
V
IOL=2.1mA
“H” Output Voltage
VOH
Vcc-0.5
－
Vcc
V
IOH=-0.4mA
Input Leakage Current
ILI
-10
－
10
µA
VIN=0V to Vcc
Output Leakage Current
ILO
-10
－
10
µA
ICC1
－
－
ICC2
－
－
ICC3
－
－
1.5
mA
ICC4
－
－
2.0
mA
ISB
－
－
10
µA
VOUT=0V to Vcc, CSB=Vcc
Vcc=2.5V, fSCK=5MHz, tE/W=5ms,
VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN
Byte Write, Page Write
Vcc=5.5V, fSCK=5MHz, tE/W=5ms,
VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN
Byte Write, Page Write
Vcc=2.5V, fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V, fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V
CSB=Vcc, SCK=SI=Vcc or GND, SO=OPEN
Operating Current
(Write)
Operating Current
(Read)
Standby Current
(Note1)
2.0
2.5 (Note2)
mA
(Note1)
3.0
5.5 (Note2)
mA
(Note1) BR35H160/320-WC
(Note2) BR35H640/128-WC
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Operating Timing Characteristics
(Ta=-40°C to +125°C, unless otherwise specified, load capacitance CL1=100pF)
Parameter
Symbol
SCK Frequency
SCK High Time
SCK Low Time
CSB High Time
CSB Setup Time
CSB Hold Time
SCK Setup Time
SCK Hold Time
SI Setup Time
SI Hold Time
Data Output Delay Time1
Data Output Delay Time2 (CL2=30pF)
Output Hold Time
Output Disable Time
SCK Rise Time (Note1)
SCK Fall Time (Note1)
OUTPUT Rise Time (Note1)
OUTPUT Fall Time (Note1)
Write Time
Min
85
85
85
90
85
90
90
20
30
0
-
fSCK
tSCKWH
tSCKWL
tCS
tCSS
tCSH
tSCKS
tSCKH
tDIS
tDIH
tPD1
tPD2
tOH
tOZ
tRC
tFC
tRO
tFO
tE/W
2.5≤Vcc≤5.5V
Typ
Max
5
70
55
100
1
1
50
50
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ms
(Note1) Not 100% TESTED
AC measurement Conditions
Parameter
CL1
CL2
-
Limits
Min
Typ
Max
100
30
50
50
0.2Vcc / 0.8Vcc
-
0.3Vcc / 0.7Vcc
Symbol
Load Capacitance 1
Load Capacitance 2
Input Rise Time
Input Fall Time
Input Voltage
Input / Output Judgment Voltage
Unit
pF
pF
ns
ns
V
V
Sync Data Input / Output Timing
tCSS
tCS
tCS
CSB
tSCKS
tSCKWL
tSCKWH
tRC
tCSH tSCKH
CSB
tFC
SCK
SCK
tDIS tDIH
SI
SI
tPD
SO
tRO,tFO
tOH
tOZ
High-Z
High-Z
SO
Figure 1. Input Timing
Figure 2. Input / Output Timing
Data through SI enters the IC in sync with the data
rise edge of SCK. Please input address and data
starting from the most significant bit MSB.
Data through SO is output in sync with the data fall
edge of SCK. Data is output starting from the most
significant bit MSB.
tOZ Measurement Condition
IL is the load current that changes the SO voltage to 0.5×Vcc. IL=±1mA.
After CSB starts to rise, the time needed for SO to change to High-Z is defined with 10% changing point from SO=High or
SO=Low.
0.8Vcc
Signal Input
CSB
Vcc
SO
NC
NC
SCK
0.7Vcc
CSB
0.2Vcc
Signal Input
IL=±1mA
CL1=100pF
GND
SI
High
Signal Input
SO
Low
Figure 3. tOZ Measurement Circuit
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TSZ22111･15･001
0.9Vcc
0.5Vcc
0.1Vcc
Figure 4. tOZ Measurement Timing
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Block Diagram
CSB
VOLTAGE
INSTRUCTION DECODE
DETECTION
(Note1) 11bit: BR35H160-WC
12bit: BR35H320-WC
13bit: BR35H640-WC
14bit: BR35H128-WC
CONTROL CLOCK
SCK
GENERATION
WRITE
HIGH VOLTAGE
INHIBITION
GENERATOR
INSTRUCTION
SI
REGISTER
STATUS REGISTER
(Note1)
11～14bit
ADDRESS
ADDRESS
(Note1)
11～14bit
REGISTER
DECODER
16～128K
EEPROM
DATA
READ/WRITE
8bit
REGISTER
SO
AMP
8bit
Pin Configuration
TOP VIEW
Vcc
NC
SCK
SI
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
CSB
SO
NC
GND
Pin Description
Terminal Name
Input/Output
Vcc
–
Power Supply to be connected
GND
–
All input / output reference voltage, 0V
CSB
Input
Chip select input
SCK
Input
Serial clock input
SI
Input
SO
Output
NC
–
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Function
Start bit, ope code, address, and serial data input
Serial data output
Non connection
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Typical Performance Curves
The following characteristic data are typ value.
Figure 5. "H" Input Voltage vs Supplty Voltage
Figure 6. "L" Input Voltage vs Supply Voltage
Figure 7. "L" Output Voltage vs Output Current
(Vcc=2.5V)
Figure 8. "H" Output Voltage vs Output Current
(Vcc=2.5V)
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Typical Performance Curves‐Continued
Figure 10. Output Leak Current vs Output Voltage
(Vcc=5.5V)
Figure 9. Input leak Current vs Supply Voltage
Figure 11. Current Consumption at WRITE Operation vs
Supply Voltage
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TSZ22111･15･001
Figure 12. Current Consumption at WRITE Operation vs
Supply Voltage (BR35H640/128-WC)
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Typical Performance Curves‐Continued
Figure 13. Consumption Current at READ Operation vs
Supply Current
Figure 14. Standby Current vs Supply Voltage
Figure 15. SCK Frequency vs Supply Voltage
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©2012 ROHM Co., Ltd. All rights reserved.
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Figure 16. SCK High Time vs Supply Voltage
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Typical Performance Curves‐Continued
Figure 18. CSB High Time vs Supply Voltage
Figure 17. SCK Low Time vs Supply Voltage
Figure 20. CSB Hold Time vs Supply Voltage
Figure 19. CSB Setup time vs Supply Voltage
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Typical Performance Curves‐Continued
Figure 21. SI Setup Time vs Supply Voltage
Figure 22. SI Hold Time vs Supply Voltage
Figure 23. Data Output Delay Time vs Supply Voltage
(CL1=100pF)
Figure 24. Data Output Delay Time vs Supply Voltage
(CL2=30pF)
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Typical Performance Curves‐Continued
Figure 25. Output Disable Time vs Supply Voltage
Figure 26. Output Rise Time vs Supply Voltage
Figure 28. Write Cycle Time vs Supply Voltage
Figure 27. Output Fall Time vs Supply Voltage
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Features
1. Status Registers
This IC has status registers. The status register has 8 bits and expresses the following parameters.
WEN is set by the write enable command and write disable command. WEN goes into the write disable status when
the power source is turned off. The R/B bit is for write confirmation and therefore cannot be set externally.
The status register value can be read by use of the read status command.
Status Registers
Product Number
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
――
R /B
bit 6
bit 5
bit 4
bit 3
bit 2
bit 1
0
0
0
0
0
0
WEN
Memory
location
bit
WEN
bit 7
Register
bit 0
――
R /B
Function
Contents
Write and write status register write enable
/ disable status confirmation bit
This confirms prohibited status or
permitted status of the write and the
write status register.
WEN=0=prohibited
WEN=1=permitted
Write cycle status (READY / BUSY) status confirmation bit
――
Register
R /B=0=READY
――
R /B=1=BUSY
This confirms READY status or BUSY
status of the write cycle.
Command Mode
Command
WREN
WRDI
READ
WRITE
RDSR
Ope code
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
0000
0110
0000
0100
0000
0011
0000
0010
0000
0101
Contents
Write enable
Write disable
Read
Write
Read status register
Write enable command
Write disable command
Read command
Write command
Status register read command
Timing Chart
1. Write Enable (WREN) / Disable (WRDI) Cycle
WREN (WRITE ENABLE): Write Enable
CSB
SCK
SI
SO
0
0
1
0
2
0
3
4
0
5
0
6
1
7
1
0
High-Z
Figure 29. Write Enable Command
WRDI (WRITE DISABLE): Write Disable
CSB
SCK
SI
SO
0
0
1
0
2
0
3
0
5
4
0
1
6
0
7
0
High-Z
Figure 30. Write Disable
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
This IC has a write enable status and a write disable status. Write enable status is achieved by the write enable
command and write disable status is achieved by the write disable command. As for these commands, set CSB to
LOW and then input the respective ope codes. The respective commands are accepted at the 7-th clock rise. The
command is also valid with Inputs over 7 clocks.
In order to perform a write command it is necessary to use the write enable command to set the IC to the write enable
status. If a write command is input during write disable status the command will be cancelled. After a write command is
input during write enable status the IC will return to the write disable status. When turning on the power the IC will be in
write disable status.
2. Read Command (READ)
～
～
～
～
CSB
～
～
Product
number
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
0
1
2
3
4
5
6
7
8
9
10
11
23
～
～
SCK
24
30
～
～
0
0
0
0
0
1
*
1
*
A13 A12
A1
～
～
0
～
～
SI
A0
～
～
～
～
～
～
High-Z
SO
D6
D7
D2
D1
Address
Length
A10-A0
A11-A0
A12-A0
A13-A0
D0
＊=Don't Care
Figure 31. Read Command (BR35H160/320/640/128-WC)
By use of the read command, the data of the EEPROM can be read. As for this command, set CSB to LOW, then input
the address after the read ope code. EEPROM starts data output of the designated address. Data output is started
from the SCK fall of 23 clock and from D7 to D0 sequentially. The IC features an increment read function. After the
output of 1 byte (8bits) of data, by continuing input of SCK the next data addresses can be read. Increment read can
read all addresses of the EEPROM. After reading the data of the most the significant address, by continuing with the
increment read the data of the most insignificant address is read.
3. Write Command (WRITE)
1
0
2
3
4
5
6
7
9
8
10
11
～
～
SCK
23
24
～
～
0
0
0
0
1
0
A13
*
*
A12
A1
A0
D7
～
～
0
～～
～～
D6
High-Z
D2
D1
D0
～
～
～
～
SO
0
31
30
～
～
SI
Product
number
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
～ ～
～
～
～
～
CSB
Address
Length
A10-A0
A11-A0
A12-A0
A13-A0
＊=Don't Care
Figure 32. Write Command (BR35H160/320/640/128-WC)
12
*
23
A1
A0
24
D7
25
D6
31
32
32n-7
33
32n-2
32n-1 32n
D1
D0
D7
D7
D6
D6
D0
～
～
High-Z
30
～
～
0
1
8
32n-8
～
～
7
CSB valid timing
～
～
0
6
～ ～
～
～
0
5
～ ～
～
～
0
4
～ ～
～
～
0
3
～
～
0
2
～
～
SO
0
1
～
～
SI
0
～
～
SCK
～
～
～
～
CSB
Figure 33. n Byte Page Write Command (BR35H160/320/640-WC)
*
23
A1
A0
24
D7
25
D6
30
31
32
64n-7
33
64n-2
64n-1 64n
D1
D0
D7
D6
D7
D6
D0
～
～
High-Z
12
～
～
0
8
64n-8
～
～
1
7
～
～
0
6
～ ～
～
～
0
5
CSB valid timing
～ ～
～
～
0
4
～ ～
～
～
0
3
～
～
0
2
～
～
SO
0
1
～
～
SI
0
～
～
SCK
～
～
～
～
CSB
Figure 34. n Byte Page Write Command (BR35H128-WC)
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TSZ02201-0R1R0G100170-1-2
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
With the write command data can be written to the EEPROM. As for this command, set CSB to LOW, then input
address and data after inputting the write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write
time of EEPROM requires time of tE/W (Max 5ms). During tE/W, commands other than the status read command are not
accepted. Start CSB after taking the last data (D0) and before the next SCK clock starts. At other timings the write
command will not be executed and will be cancelled. The IC has page write functionality. After input 1 byte (8bits) of
(Note1)
bytes can be written in one tE/W. In page write,
data, by continuing data input without starting CSB, data up to 32/64
the insignificant 5/6(Note2) bit of the designated address is incremented internally every time 1 byte of data is input, and
data is written to the respective addresses. When data larger then the maximum bytes is input the address rolls over
and previously input data is overwritten.
Write command is executed when CSB rises between the SCK clock rising edge to recognize the 8th bit’s of data input
and the next SCK rising edge. At other timings the write command is not executed and cancelled (Figure 40 valid
timing c). In page write, the CSB valid timing is every 8 bits. If CSB rises at other timings page write is cancelled
together with the write command and the input data is reset.
(Note1) BR35H160/320/640-WC = Max 32 Bytes
This column addresses are
Top address of this page
This column addresses are
Top address of this page
BR35H128-WC
= Max 64 Bytes
(Note2) BR35H160/320/640-WC = Lower 5 bits
BR35H128-WC
= Lower 6 bits
64byte
32byte
page0
000h
001h
002h
･･･
01Eh
01Fh
page 0
0000h
0001h
0002h
･･･
003Eh
page 1
020h
021h
022h
･･･
03Eh
03Fh
page 1
0040h
0041h
0042h
･･･
007Eh
007Fh
05Fh
・
・
・
n-32
page 2
・
・
・
0080h
・
・
・
0081h
・
・
・
0082h
・
・
・
･･･
・
・
・
00BEh
・
・
・
00BFh
・
・
・
page m-1
n-127
n-126
n-125
･･･
n-65
n-63
n-62
n-61
･･･
n-1
page 2
・
・
・
page m-1
page m
(Note4)
040h
・
・
・
n-63
041h
・
・
・
n-62
042h
・
・
・
n-61
･･･
・
・
・
･･･
05Eh
・
・
・
n-33
n-31
n-30
n-29
･･･
n-1
(Note3) n=8191d=1FFFh: BR35H640-WC
n=4095d=FFFh：BR35H320-WC
n=2047d=7FFh：BR35H160-WC
(Note4) m=255 : BR35H640-WC
m=127：BR35H320-WC
m=63：BR35H160-WC
n(Note3)
page
(Note6)
This column addresses are the
(Note5) n=16383d=3FFFh：BR35H128-W
(Note6) m=255：BR35H128-WC
last address of this page
003Fh
n-64
(Note5)
n
This column addresses are the
last address of this page
Figure 35. EEPROM Physical Address for Page Write Command (32/64Byte)
Example of Page Write Command
No.
①
②
③
Addresses of Page0
Previous data
2 bytes input data
2 bytes last data
④
34 bytes input data
⑤
34 bytes last data
000h
00h
AAh
AAh
AAh
FFh
FFh
001h
01h
55h
55h
55h
00h
00h
002h
02h
02h
AAh
AAh
････
････
････
････
････
････
････
01Eh
1Eh
1Eh
AAh
AAh
01Fh
1Fh
1Fh
55h
55h
a：In case of input the data of No.② which is 2 bytes page write command for the data of No.①, EEPROM data changes
like No.③.
b：In case of input the data of No.④ which is 34 bytes page write command for the data of No.①, EEPROM data changes
like No.⑤.
c：In case of a or b, when write command is cancelled, EEPROM data keep No.①.
In page write command, when data is set to the last address of a page (e.g. address “03Fh” of page 1), the next data will be
set to the top address of the same page (e.g. address “020h” of page 1). This is why page write address increment is
available in the same page. As a reference, if of 32 bytes, page write command is executed for 2 bytes the data of the other
30 bytes without addresses will not be changed.
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4. Status Register Read Command
CSB
SCK
SI
SO
0
0
1
0
2
0
4
3
0
0
5
1
High-Z
6
0
8
7
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
bit7
bit6
bit5
bit4
bit3
0
0
0
0
0
bit2
bit1
0
WEN R/B
bit0
bit7
bit6
0
0
bit5
0
bit4
bit3
0
0
bit2
0
bit1
bit0
WEN R/B
0
Figure 36. Status Register Read Command (BR35H160/320/640/128-WC)
The EEPROM status can be read by use of the status register read command. For this command set CSB to Low then
input the ope code of the status register read command followed by the clock input as shown above. The data of status
register will then be read out. This command features increment functionality. When clock input is continued during
CSB=Low, 8 bytes of status register data will be continuously read out. When this command is executed from the start
of write programming to the end of write programming, the end of write programming can be confirmed by checking the
following changes: WEN=Low followed by R/B=Low. After confirming the end of write programming, before inputting
the next command CSB first needs to be High and then put back to Low.
At Standby
1. Current at Standby
Set CSB “H”, and be sure to set SCK, SI input “L” or “H”. Do not input intermediate electric potantial.
2. Timing
As shown in Figure 37, at standby, when SCK is “H”, even if CSB falls, SI status is not read at fall edge. SI status is
read at SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status.
Even if CSB is fallen at SCK=SI=”H”,
SI status is not read at that edge.
CSB
Command start here. SI is read.
SCK
0
1
2
SI
Figure 37. Operating Timing
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Method to Cancel Each Command
1. READ, RDSR
・Cancellation method: cancel by CSB = “H”
Ope code
8 bits
Address
Data
Ope code
8 bits/16bits
8 bits
8 bits
Data
8 bits
Cancel available in all areas of read mode
Cancel available in all
areas of rdsr mode
Figure 38. READ Cancel Valid Timing
Figure 39. RDSR Cancel Valid Timing
2. WRITE, PAGE WRITE
a：Ope code, address input area.
Cancellation possible by CSB=”H”
b：Data input area (D7 to D1 input area)
Cancellation possible by CSB=”H”
c：Data input area (D0 area)
Write starts after CSB rise.
After CSB rise, cancellation is no longer possible.
d：tE/W area.
Cancellation is possible by CSB = “H”. However, when
write starts (CSB rise) in area c, cancellation is no
longer possible. Also, cancellation is not possible by
continues inputting of SCK clock. In page write
mode, there is a write enable area at every 8 clocks.
Ope code
8bits
Address
Data
16bits
8bits
a
tE/W
b
d
c
SCK
SI
D7
D6
D5
D4
D3
D2
D1
D0
c
b
Figure 40. WRITE Cancel Valid Timing
Note 1) If Vcc is set to OFF during execution of write the data of the designated address is not guaranteed. Please execute write again.
Note 2) If CSB rises at the same timing as that the SCK rises, write execution / cancel will become unstable.
Therefore, it is recommended to let CSB rise in the SCK = “L” area. As for SCK rise, ensure a timing of tCSS / tCSH or higher.
3. WREN, WRDI
a：From ope code to 7-th clock rise, cancel by CSB = “H”.
b：Cancellation is not possible when CSB rises after the 7-th clock.
6
SCK
7
8
8 bits
a
b
Figure 41. WREN/WRDI Cancel Valid Timing
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High Speed Operations
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
1. Input Pin Pull up, Pull down Resistance
When attaching pull up, pull down resistance to the EEPROM input pin, select an appropriate value for the
microcontroller VOL, IOL from the VIL characteristics of this IC.
2. Pull up Resistance
Microcontroll
IOLM
RPU
RPU ≥
EEPROM
VOLM
･･･①
VOLM ≤VILE
VILE
“L” output
VCC -VOLM
IOLM
“L” input
・VILE :EEPROM VIL specifications
・VOLM :Microcontroller VOL specifications
・IOLM :Microcontroller IOL specifications
･･･②
Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V, IOLM=2mA,
from the equation ①,
RPU ≥
5 - 0 .4
2 × 10 -3
∴RPU ≥ 2.3
Figure 42. Pull up Resistance
kΩ
With the value of Rpu to satisfy the above equation, VOLM
becomes 0.4V or lower, and with VILE (=1.5V), the equation ② is
also satisfied.
Also, in order to prevent malfunction or erroneous write at power ON/OFF, be sure to make CSB pull up.
3. Pull down Resistance
Microcontroll
EEPROM
VOHM
VIHE
“H” output
IOHM
RPD
“H” input
RPD ≥
VOHM
IOHM
･･･③
VOHM ≥VIHE
･･･④
Example) When VCC=5V, VOHM=VCC-0.5V, IOHM＝0.4mA,
VIHE=VCC×0.7V, from the equation③,
RPD ≥
Figure 43. Pull down Resistance
5 - 0 .5
0.4 × 10 -3
∴RPU ≥ 11.3
kΩ
The operations speed changes according to the amplitude VIHE, VILE of the signals input to the EEPROM. More stable
high speed operations can be realized by inputting signals with Vcc / GND levels of amplitude. On the contrary, when
(Note1)
signals with an amplitude of 0.8Vcc / 0.2Vcc are input, operation speed slows down.
In order to realize more stable high speed operation, it is recommended to set the values of RPU, RPD as large as
possible, and to have the amplitude of the signals input to the EEPROM close to the Vcc / GND amplitude level.
(Note1) In this case, the guaranteed value of operating timing is guaranteed.
4. SO Load Capacitance Condition
The load capacitance of the SO output pin affects the SO output delay characteristic. (Data output delay time, time
from HOLDB to High-Z, output rise time, output fall time.). Make the SO load capacitance small to improve the output
delay characteristic.
EEPROM
SO
CL
Figure 44. SO Load Dependency of Data Output Delay Time tPD
5. Other Cautions
Make all wires from the microcontroller to EEPROM input pin the same length. This in order to prevent setup / hold
violation to the EEPROM.
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Datasheet
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Equivalent Circuit
1. Output Circuit
SO
OEint.
Figure 45. SO Output Equivalent Circuit
2. Input Circuit
RESETint.
CSB
Figure 46. CSB Input Equivalent Circuit
SI
SCK
Figure 48. SI Input Equivalent Circuit
Figure 47. SCK Input Equivalent circuit
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Notes on Power ON/OFF
1. At Power ON/OFF set CSB=”H” (=Vcc).
When CSB is “L”, the IC goes into input accept status (active). If power is turned on in this status noises, etc. may
cause malfunction or erroneous write. To prevent this, set CSB to “H” at power ON. (When CSB is in “H” status, all
inputs are canceled.)
Vcc
Vcc
CSB
GND
Good
example
Bad
example
Figure 49. CSB Timing at Power ON/OFF
(Good example) CSB terminal is pulled up to Vcc.
After turning power off allow for 10ms or more before turning power on again. If power is turned on without observing
this condition, the IC internal circuit may not be reset.
(Bad example) CSB terminal is “L” at power ON/OFF.
In this case, CSB always becomes “L” (active status), and the EEPROM may malfunction or perform an erroneous
write due to noises, etc.
This can even occur when CSB input is High-Z.
2. LVCC Circuit
LVCC (Vcc-Lockout) circuit prevents data rewrite action at low power and prevents erroneous write.
At LVCC voltage (Typ =1.9V) or below, it prevents data rewrite.
3. P.O.R. Circuit
This IC has a POR (Power On Reset) circuit as countermeasure against erroneous write. After the POR operation is
performed, write disable status is entered. The POR circuit is only valid when power is ON and does not work when
power is OFF. When power is ON and the following recommended tR, tOFF, Vbot conditions are not satisfied, write
enable status might be entered due to noise etc.
tR
Vcc
tR
tOFF
0
Vbot
Recommended Conditions for tR, tOFF, Vbot
tOFF
Vbot
10ms or below
10ms or higher
0.3V or below
100ms or below
10ms or higher
0.2V or below
Figure 50. Rise Waveform
Noise Countermeasures
1. Vcc Noise (Bypass Capacitor)
When noise or surge gets in the power source line, malfunction may occur. To prevent this, it is recommended to attach
a bypass capacitor (0.1µF) between IC Vcc and GND, as close to IC as possible.
It is also recommended to attach a bypass capacitor between the board Vcc and GND.
2. SCK Noise
When the rise time of SCK (tRC) is long and a there is a certain degree of noise, malfunction may occur due to clock bit
displacement. To avoid this, a Schmitt trigger circuit is built in the SCK input. The hysteresis width of this circuit is set to
about 0.2V. If noises exist at the SCK input set the noise amplitude to 0.2Vp-p or below. Also, it is recommended to set
the rise time of SCK (tRC) to 100ns or below. In case the rise time is 100ns or higher, sufficient noise countermeasures
are needed. Clock rise, fall time should be as small as possible.
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Datasheet
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Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
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Operational Notes – continued
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
12. Regarding the Input Pin of the IC
In the construction of this IC, P-N junctions are inevitably formed creating parasitic diodes or transistors. The
operation of these parasitic elements can result in mutual interference among circuits, operational faults, or physical
damage. Therefore, conditions which cause these parasitic elements to operate, such as applying a voltage to an
input pin lower than the ground voltage should be avoided. Furthermore, do not apply a voltage to the input pins when
no power supply voltage is applied to the IC. Even if the power supply voltage is applied, make sure that the input pins
have voltages within the values specified in the electrical characteristics of this IC.
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Ordering Information
B
R
3
5
H
x
x
x
x
x
x
- W
C
xx
BUS type
35 : SPI
Operating temperature
-40°C to +125°C
Capacity
160 = 16K
320 = 32K
640 = 64K
128 = 128K
Package
F
:SOP8
FJ
:SOP-J8
FVT
:TSSOP-B8
FVM
:MSOP8
W : Double Cell
C : For Automotive Application
Packaging and forming specification
E2
: Embossed tape and reel
TR
: Embossed tape and reel (MSOP8 package only)
Lineup
Package
Capacity
Type
SOP8
16K
SOP-J8
TSSOP-B8
MSOP8
SOP8
32K
SOP-J8
TSSOP-B8
MSOP8
SOP8
64K
SOP-J8
TSSOP-B8
128K
SOP8
SOP-J8
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Quantity
Reel of 2500
Reel of 3000
Reel of 2500
Reel of 3000
Reel of 2500
Reel of 3000
Reel of 2500
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Physical Dimension, Tape and Reel Information
Package Name
SOP8
(Max 5.35 (include. BURR)
(UNIT : mm)
PKG : SOP8
Drawing No. : EX112-5001-1
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Physical Dimension Tape and Reel Information - continued
Package Name
SOP-J8
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Physical Dimension Tape and Reel Information – continued
Package Name
TSSOP-B8
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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BR35Hxxx-WC (16K 32K 64k 128k)
Physical Dimension Tape and Reel Information - continued
Package Name
MSOP8
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
1pin
Direction of feed
Reel
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Marking Diagrams (TOP VIEW)
SOP8 (TOP VIEW)
SOP-J8 (TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
TSSOP-B8 (TOP VIEW)
MSOP8 (TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
Marking Information
Capacity
16K
32K
64K
128K
Product Name
Marking
Package Type
16H
SOP8
16H
SOP-J8
16H
TSSOP-B8
16H
MSOP8
32H
SOP8
32H
SOP-J8
32H
TSSOP-B8
32H
MSOP8
64H
SOP8
64H
SOP-J8
64H
TSSOP-B8
128H
SOP8
128H
SOP-J8
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Datasheet
BR35Hxxx-WC (16K 32K 64k 128k)
Revision History
Date
Revision
10.Sep.2012
31.Oct.2013
22.Nov.2013
001
002
003
Changes
New Release
All Page Document converted to new format.
Modified a data retention years.
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Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
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