BR35H320FVT-WC

1/4 ◇ STRUCTURE ◇ PRODUCT ◇ Silicon Monolithic Integrated Circuit SPI BUS 32Kbit (4,096×8bit) EEPROM PART NUMBER BR35H320-WC series PACKAGE SOP8 SOP-J8 TSSOP-B8 MSOP8 PART NUMBER BR35H320F-WC BR35H320FJ-WC BR35H320FVT-WC BR35H320FVM-WC ◇ FEATURES Serial Peripheral Interface Single power supply (2.5V～5.5V) 1,000,000 erase/write cycles endurance (85℃) 500,000 erase/write cycles endurance (105℃) 300,000 erase/write cycles endurance (125℃) ◇ ABSOLUTE MAXIMUM RATING (Ta=25℃) Parameter Symbol Supply Voltage Vcc Rating Unit -0.3～6.5 V 560　(BR35H320F-WC) *1 560　(BR35H320FJ-WC) *2 Power Dissipation Pd mW 410　(BR35H320FVT-WC) *3 380　(BR35H320FVM-WC) *4 Storage Temperature Tstg -65～150 ℃ Operating Temperature Topr -40～125 ℃ Terminal Voltage － -0.3～Vcc+0.3 V * Degradation is done at 4.5mW/℃(※1,2), 3.3mW/℃(※3), 3.1mW/℃(※4) for operation above 25℃ ◇ RECOMMENDED OPERATING CONDITION Parameter Symbol Rating Supply Voltage Vcc 2.5～5.5 Input Voltage VIN 0～Vcc Unit V V REV. B 2/4 ◇MEMORY CELL CHARACTERISTICS(Vcc=2.5～5.5V) Parameter Specification Min. 1,000,000 Write/Erase Cycle *1 500,000 300,000 Data Retention *1 40 20 Typ. Max. Unit Cycle Cycle Cycle Year Year Test Condition Ta≦85℃ Ta≦105℃ Ta≦125℃ Ta≦25℃ Ta≦125℃ ○Initial Data：Memory array FFh *1 Not 100% TESTED ◇DC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40～125℃, Vcc=2.5～5.5V) Parameter “H” Input Voltage “L” Input Voltage “L” Output Voltage “H” Output Voltage Input Leakage Current Output Leakage Current ◇AC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40～125℃, CL=100pF) test condition Parameter SCK clock Frequency SCK High Time SCK Low Time CS High Time CS Setup Time CS Hold Time SCK Setup Time SCK Hold Time SI Setup Time SI Hold Time Output Data Delay Time1 Output Data Delay Time2 (CL=30pF) Symbol VIH1 VIL1 VOL VOH ILI ILO ICC1 Specification Min. Typ. Max. 0.7xVcc Unit V V V V Symbol fSCK tSCKWH tSCKWL tCS tCSS tCSH tSCKS tSCKH tDIS tDIH tPD1 tPD2 tOH tOZ *1 *1 *1 *1 tRC tFC tRO tFO tE/W 2.5V≦VCC≦5.5V Min. － 85 85 85 90 85 90 90 20 30 0 － － － － － Typ. － － － － － － － － － － － － － － － － － － － Max. 5 － － － － － － － － － 70 55 － 100 1 1 50 50 5 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ns ns μs μs ns ns ms － － － － － － － － － － Vcc+0.3 2.5V≦Vcc≦5.5V 2.5V≦Vcc≦5.5V IOL=2.1mA (Vcc=2.5V～5.5V) IOH=-0.4mA (Vcc=2.5V～5.5V) -0.3 0 Vcc-0.5 0.3xVcc 0.4 Vcc 10 10 2 3 1.5 2 -10 -10 － － － － μA VIN=0V～Vcc μA VOUT=0V～Vcc , CSB=Vcc mA mA mA mA Vcc=2.5V , fSCK=5MHz , tE/W=5ms Byte Write，Page Write Vcc=5.5V , fSCK=5MHz , tE/W=5ms Byte Write，Page Write Vcc=2.5V , fSCK=5MHz Read，Read Status Register Vcc=5.5V , fSCK=5MHz Read，Read Status Register Vcc=5.5V Operating Current Write ICC2 ICC3 Operating Current Read ICC4 Output Hold Time Output Disable Time SCK Rise Time SCK Fall Time Output Rise Time Output Fall Time Write Cycle Time Standby Current ISB － － 10 μA CSB=Vcc SCK=SI=Vcc or GND, SO=OPEN ○This product is not designed for protection against ○radioactive rays. ※1　Not 100% TESTED ◇ BLOCK　DIAGRAM ◇PIN No. / PIN NAME PIN No. 1 2 3 4 5 6 7 8 PIN NAME CSB SO NC GND SI SCK NC VCC CSB 1 INSTRUCTION DECODE CONTROL CLOCK GENERATION WRITE VOLTAGE DETECTION 8 VCC HIGH VOLTAGE GENERATOR SO 2 INSTRUCTION REGISTER INHIBITION 7 NC STATUS REGISTER NC 3 ADDRESS REGISTER 12bit ADDRESS DECODER 12bit 6 SCK 32,768bit EEPROM DATA READ/WRITE 8bit GND 4 REGISTER AMP 8bit 5 SI Fig.1　BLOCK　DIAGRAM REV. B 3/4 ◇NOTES FOR POWER SUPPLY In order to prevent an inadvertent write, the device has the feature of P.O.R.　 After the power is on, the device is in the write disable mode. P.O.R. works only during power up. The noise may force the device write enable mode with CS=“H”during power ON/OFF. In the case of power up, keep the following conditions to ensure to make the function of P.O.R. tR ◇RECOMMENDED CONDITIONS OF tR, tOFF, Vbot Vcc tR tOFF Vbot Below 10ms Above 10ms Below 0.3V tOFF Vbot Below 100ms Above 10ms Below 0.2V 0 Fig.2 Vcc waveform Please keep CS “H” during power ON/OFF. The device is an active state during CS is low. The extraordinary function or data collaption may occur because of noise etc., if power-up is done with CS “L”. In order to prevent above errors from happening, keep CS “H” (=Vcc) during power ON. (The device does not receive any command during CS is high.) It may continue at low Vcc by capacitance of Vcc line during power off. Please keep CS “H” during power off because of the device may make malfunction and inadvertent write. Ｖｃｃ Ｖｃｃ ＧＮＤ Ｖｃｃ ＣＳ ＧＮＤ Good Bad （Good example） CS follows Vcc. (CS is pull up to Vcc) （Bad example） CS is low during power ON/OFF. Please take more than 10ms between power ON and power OFF, or the internal circuit is not always reset. Fig.3　CS TIMING DURING POWER ON/OFF ◇CAUTIONS ON USE (1) Absolute maximum ratings If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to LSI. (2) GND electric potential Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltages is lower than that of GND terminal. (3) Heat design In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin. (4) Terminal to terminal shortcircuit and wrong packaging When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be destructed. (5) Strong electromagnetic field Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently. REV. B 4/4 ◇PHYSICAL DIMENSION 5.0±0.2 MAX5.35 (include.BURR) Product Name：BR35H320F-WC 4゜ -4゜ +6゜ Product Name：BR35H320FJ-WC 8 7 6 5 32H 6.2±0.3 4.4±0.2 0.3MIN 0.9±0.15 32H 1 0.595 2 3 4 LOT NO． 0.17 -0.05 +0.1 LOT NO． 1.5±0.1 0.11 1.27 0.42±0.1 Drawing　No. : EX112-5002 (UNIT:mm) Drawing　No. : EX111-5002 (UNIT:mm) Fig.4-(a)　PHYSICAL DIMENSION SOP-8 (BR35H320F-WC) Fig.4-(b)　PHYSICAL DIMENSION SOP-J8 (BR35H320FJ-WC) 3.0±0.1 2.9±0.1 MAX3.25 (include.BURR) Product Name： BR35H320FVT-WC 4°±4° 5 Product Name：BR35H320FVM-WC 4゜ -4゜ +6゜ MAX3.35 (include.BURR) 8 7 6 8 7 6 5 6.4±0.2 4.4±0.1 4.0±0.2 2.8±0.1 0.29±0.15 0.6±0.2 32H 3 2 Ｌ H 0.5±0.15 1 2 3 4 0.475 1 2 3 1PIN MARK 4 LOT NO． LOT NO． 0.145 -0.03 +0.05 0.525 1.2MAX 0.1±0.05 1.0±0.05 1PIN MARK 0.145 +0.05 -0.03 0.75±0.05 0.08±0.05 0.22 -0.04 +0.05 0.65 0.08 S 0.245 +0.05 0.08 M -0.04 Drawing　No. :165-5002 (UNIT:mm) Drawing　No. :181-5002 (UNIT:mm) Fig.4-(c)　PHYSICAL DIMENSION　MSOP8（BR35H320FVM-WC） Fig.4-(d) PHYSICAL DIMENSION TSSOP-B8（BR35H320FVT-WC） REV. 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