BR35H320FVT-WC

BR35H320FVT-WC

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    BR35H320FVT-WC - Silicon Monolithic Integrated Circuit - Rohm

  • 详情介绍
  • 数据手册
  • 价格&库存
BR35H320FVT-WC 数据手册
1/4 ◇ STRUCTURE ◇ PRODUCT ◇ Silicon Monolithic Integrated Circuit SPI BUS 32Kbit (4,096×8bit) EEPROM PART NUMBER BR35H320-WC series PACKAGE SOP8 SOP-J8 TSSOP-B8 MSOP8 PART NUMBER BR35H320F-WC BR35H320FJ-WC BR35H320FVT-WC BR35H320FVM-WC ◇ FEATURES Serial Peripheral Interface Single power supply (2.5V~5.5V) 1,000,000 erase/write cycles endurance (85℃) 500,000 erase/write cycles endurance (105℃) 300,000 erase/write cycles endurance (125℃) ◇ ABSOLUTE MAXIMUM RATING (Ta=25℃) Parameter Symbol Supply Voltage Vcc Rating Unit -0.3~6.5 V 560 (BR35H320F-WC) *1 560 (BR35H320FJ-WC) *2 Power Dissipation Pd mW 410 (BR35H320FVT-WC) *3 380 (BR35H320FVM-WC) *4 Storage Temperature Tstg -65~150 ℃ Operating Temperature Topr -40~125 ℃ Terminal Voltage - -0.3~Vcc+0.3 V * Degradation is done at 4.5mW/℃(※1,2), 3.3mW/℃(※3), 3.1mW/℃(※4) for operation above 25℃ ◇ RECOMMENDED OPERATING CONDITION Parameter Symbol Rating Supply Voltage Vcc 2.5~5.5 Input Voltage VIN 0~Vcc Unit V V REV. B 2/4 ◇MEMORY CELL CHARACTERISTICS(Vcc=2.5~5.5V) Parameter Specification Min. 1,000,000 Write/Erase Cycle *1 500,000 300,000 Data Retention *1 40 20 Typ. Max. Unit Cycle Cycle Cycle Year Year Test Condition Ta≦85℃ Ta≦105℃ Ta≦125℃ Ta≦25℃ Ta≦125℃ ○Initial Data:Memory array FFh *1 Not 100% TESTED ◇DC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40~125℃, Vcc=2.5~5.5V) Parameter “H” Input Voltage “L” Input Voltage “L” Output Voltage “H” Output Voltage Input Leakage Current Output Leakage Current ◇AC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40~125℃, CL=100pF) test condition Parameter SCK clock Frequency SCK High Time SCK Low Time CS High Time CS Setup Time CS Hold Time SCK Setup Time SCK Hold Time SI Setup Time SI Hold Time Output Data Delay Time1 Output Data Delay Time2 (CL=30pF) Symbol VIH1 VIL1 VOL VOH ILI ILO ICC1 Specification Min. Typ. Max. 0.7xVcc Unit V V V V Symbol fSCK tSCKWH tSCKWL tCS tCSS tCSH tSCKS tSCKH tDIS tDIH tPD1 tPD2 tOH tOZ *1 *1 *1 *1 tRC tFC tRO tFO tE/W 2.5V≦VCC≦5.5V Min. - 85 85 85 90 85 90 90 20 30 0 - - - - - Typ. - - - - - - - - - - - - - - - - - - - Max. 5 - - - - - - - - - 70 55 - 100 1 1 50 50 5 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ns ns μs μs ns ns ms - - - - - - - - - - Vcc+0.3 2.5V≦Vcc≦5.5V 2.5V≦Vcc≦5.5V IOL=2.1mA (Vcc=2.5V~5.5V) IOH=-0.4mA (Vcc=2.5V~5.5V) -0.3 0 Vcc-0.5 0.3xVcc 0.4 Vcc 10 10 2 3 1.5 2 -10 -10 - - - - μA VIN=0V~Vcc μA VOUT=0V~Vcc , CSB=Vcc mA mA mA mA Vcc=2.5V , fSCK=5MHz , tE/W=5ms Byte Write,Page Write Vcc=5.5V , fSCK=5MHz , tE/W=5ms Byte Write,Page Write Vcc=2.5V , fSCK=5MHz Read,Read Status Register Vcc=5.5V , fSCK=5MHz Read,Read Status Register Vcc=5.5V Operating Current Write ICC2 ICC3 Operating Current Read ICC4 Output Hold Time Output Disable Time SCK Rise Time SCK Fall Time Output Rise Time Output Fall Time Write Cycle Time Standby Current ISB - - 10 μA CSB=Vcc SCK=SI=Vcc or GND, SO=OPEN ○This product is not designed for protection against ○radioactive rays. ※1 Not 100% TESTED ◇ BLOCK DIAGRAM ◇PIN No. / PIN NAME PIN No. 1 2 3 4 5 6 7 8 PIN NAME CSB SO NC GND SI SCK NC VCC CSB 1 INSTRUCTION DECODE CONTROL CLOCK GENERATION WRITE VOLTAGE DETECTION 8 VCC HIGH VOLTAGE GENERATOR SO 2 INSTRUCTION REGISTER INHIBITION 7 NC STATUS REGISTER NC 3 ADDRESS REGISTER 12bit ADDRESS DECODER 12bit 6 SCK 32,768bit EEPROM DATA READ/WRITE 8bit GND 4 REGISTER AMP 8bit 5 SI Fig.1 BLOCK DIAGRAM REV. B 3/4 ◇NOTES FOR POWER SUPPLY In order to prevent an inadvertent write, the device has the feature of P.O.R.  After the power is on, the device is in the write disable mode. P.O.R. works only during power up. The noise may force the device write enable mode with CS=“H”during power ON/OFF. In the case of power up, keep the following conditions to ensure to make the function of P.O.R. tR ◇RECOMMENDED CONDITIONS OF tR, tOFF, Vbot Vcc tR tOFF Vbot Below 10ms Above 10ms Below 0.3V tOFF Vbot Below 100ms Above 10ms Below 0.2V 0 Fig.2 Vcc waveform Please keep CS “H” during power ON/OFF. The device is an active state during CS is low. The extraordinary function or data collaption may occur because of noise etc., if power-up is done with CS “L”. In order to prevent above errors from happening, keep CS “H” (=Vcc) during power ON. (The device does not receive any command during CS is high.) It may continue at low Vcc by capacitance of Vcc line during power off. Please keep CS “H” during power off because of the device may make malfunction and inadvertent write. Vcc Vcc GND Vcc CS GND Good Bad (Good example) CS follows Vcc. (CS is pull up to Vcc) (Bad example) CS is low during power ON/OFF. Please take more than 10ms between power ON and power OFF, or the internal circuit is not always reset. Fig.3 CS TIMING DURING POWER ON/OFF ◇CAUTIONS ON USE (1) Absolute maximum ratings If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to LSI. (2) GND electric potential Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltages is lower than that of GND terminal. (3) Heat design In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin. (4) Terminal to terminal shortcircuit and wrong packaging When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be destructed. (5) Strong electromagnetic field Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently. REV. B 4/4 ◇PHYSICAL DIMENSION 5.0±0.2 MAX5.35 (include.BURR) Product Name:BR35H320F-WC 4゜ -4゜ +6゜ Product Name:BR35H320FJ-WC 8 7 6 5 32H 6.2±0.3 4.4±0.2 0.3MIN 0.9±0.15 32H 1 0.595 2 3 4 LOT NO. 0.17 -0.05 +0.1 LOT NO. 1.5±0.1 0.11 1.27 0.42±0.1 Drawing No. : EX112-5002 (UNIT:mm) Drawing No. : EX111-5002 (UNIT:mm) Fig.4-(a) PHYSICAL DIMENSION SOP-8 (BR35H320F-WC) Fig.4-(b) PHYSICAL DIMENSION SOP-J8 (BR35H320FJ-WC) 3.0±0.1 2.9±0.1 MAX3.25 (include.BURR) Product Name: BR35H320FVT-WC 4°±4° 5 Product Name:BR35H320FVM-WC 4゜ -4゜ +6゜ MAX3.35 (include.BURR) 8 7 6 8 7 6 5 6.4±0.2 4.4±0.1 4.0±0.2 2.8±0.1 0.29±0.15 0.6±0.2 32H 3 2 L H 0.5±0.15 1 2 3 4 0.475 1 2 3 1PIN MARK 4 LOT NO. LOT NO. 0.145 -0.03 +0.05 0.525 1.2MAX 0.1±0.05 1.0±0.05 1PIN MARK 0.145 +0.05 -0.03 0.75±0.05 0.08±0.05 0.22 -0.04 +0.05 0.65 0.08 S 0.245 +0.05 0.08 M -0.04 Drawing No. :165-5002 (UNIT:mm) Drawing No. :181-5002 (UNIT:mm) Fig.4-(c) PHYSICAL DIMENSION MSOP8(BR35H320FVM-WC) Fig.4-(d) PHYSICAL DIMENSION TSSOP-B8(BR35H320FVT-WC) REV. B 1.0±0.2 Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. R1010A
BR35H320FVT-WC
物料型号: - BR35H320-WC系列,包括不同封装的型号:BR35H320F-WC(SOP8封装)、BR35H320FJ-WC(SOP-J8封装)、BR35H320FVT-WC(TSSOP-B8封装)、BR35H320FVM-WC(MSOP8封装)。

器件简介: - 该器件是一款SPI总线接口的32Kbit(4096×8bit)EEPROM存储器,采用单电源供电(2.5V~5.5V),具有高达1,000,000次的擦写周期耐久性(85℃时)。

引脚分配: - 1号引脚:CSB(片选信号) - 2号引脚:SO(输出数据) - 3号引脚:NC(无连接) - 4号引脚:GND(地) - 5号引脚:SI(输入数据) - 6号引脚:SCK(时钟信号) - 7号引脚:NC(无连接) - 8号引脚:VCC(供电电压)

参数特性: - 工作电压范围:2.5V至5.5V。 - 擦写周期耐久性:85℃时1,000,000次,105℃时500,000次,125℃时300,000次。 - 数据保持时间:25℃时40年,125℃时20年。

功能详解: - 该EEPROM支持串行外设接口,具有写/擦除周期长、数据保持时间长等特点。还具有电源开启时的上电复位(P.O.R.)功能,以确保设备在写保护模式下启动。

应用信息: - 适用于一般用途的电子设备或装置,如音视频设备、办公自动化设备、通信设备等。不适用于需要极高可靠性的场合,如医疗设备、运输设备等。

封装信息: - 提供了SOP8、SOP-J8、TSSOP-B8和MSOP8四种不同的封装选项,具体尺寸和安装细节参见PDF文档中的图示。
BR35H320FVT-WC 价格&库存

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