BR93A56RFVT-WME2

Datasheet Serial EEPROM Series Automotive EEPROM 105℃ Operation Microwire BUS EEPROM (3-Wire) BR93Axx-WM (1K 2K 4K 8K 16K) ●General Description BR93Axx-WM is serial EEPROM of serial 3-line interface method. ●Features „ 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) „ Wide temperature range -40℃ to +105℃ „ Operations available at high speed 2MHz clock(2.5V to 5.5V) „ Speed write available (write time 5ms max.) „ Same package and pin layout from 1Kbit to 16Kbit „ 2.5V to 5.5V single power source operation „ Address auto increment function at read operation „ Write mistake prevention function ¾ Write prohibition at power on ¾ Write prohibition by command code ¾ Write mistake prevention function at low voltage „ Program cycle auto delete and auto end function „ Program condition display by READY / BUSY „ Low current consumption ¾ At write operation (at 5V) : 1.2mA (Typ.) ¾ At read operation (at 5V) : 0.3mA (Typ.) ¾ At standby condition (at 5V) : 0.1μA (Typ.)(CMOS input) „ TTL compatible (input / output s) „ Data retention for 40 years(Ta≦25℃) „ Endurance up to 1,000,000 times(Ta≦25℃) „ Data at shipment all addresses FFFFh „ AEC-Q100 Qualified ●Packages W(Typ.) x D(Typ.) x H(Max.) SOP8 SOP- J8 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm TSSOP-B8 MSOP8 3.00mm x 6.40mm x 1.20mm 2.90mm x 4.00mm x 0.90mm ●BR93Axx-WM SOP8 Package type SOP-J8 TSSOP-B8 MSOP8 RFJ RFVT RFVM ● ● ● ● ● ● ● ● ● ● ● ● F RF FJ 1Kbit Power source Bit format Type voltage 64×16 BR93A46-WM 2.5V to 5.5V ● ● 2Kbit 128×16 BR93A56-WM 2.5V to 5.5V ● ● 4Kbit 256×16 BR93A66-WM 2.5V to 5.5V ● ● 8Kbit 512×16 BR93A76-WM 2.5V to 5.5V ● ● ● ● ● ● 16Kbit 1K×16 BR93A86-WM 2.5V to 5.5V ● ● ● ● ● ● Capacity ○Product structure：Silicon monolithic integrated circuit www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･14･001 ○This product is not designed protection against radioactive rays 1/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Supply voltage VCC Limits Unit -0.3 to +6.5 V 0.45 (SOP8) Permissible dissipation When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃. 0.45 (SOP-J8) Pd When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃. W 0.33 (TSSOP-B8) 0.31 (MSOP8) When using at Ta=25℃ or higher, 3.3mW to be reduced per 1℃. When using at Ta=25℃ or higher, 3.1mW to be reduced per 1℃. Storage temperature range Tstg -65 to +125 ℃ Operating temperature range Topr -40 to +105 ℃ ‐ -0.3 to VCC+0.3 V Terminal voltage Remarks ●Memory Cell Characteristics (VCC=2.5V to 5.5V) Limit Parameter Min. Typ. Max. 1,000,000 - - Unit Ta≦25℃ 550,000 Endurance *1 Ta≦60℃ Times 200,000 100,000 - - 40 - - 10 - - Data retention *1 Condition Ta≦85℃ Ta≦105℃ Ta≦25℃ Years Ta≦105℃ ○Shipment data all address FFFFh *1：Not 100％ TESTED ●Recommended Operating Ratings Parameter Symbol Limits Power source voltage VCC 2.5 to 5.5 Input voltage VIN 0 to VCC ●Electrical Characteristics (Unless otherwise specified, VCC=2.5V to 5.5V, Ta=-40℃to +105℃) Limits Parameter Symbol Min. Typ. Max. Unit V Unit Condition “L” input voltage 1 VIL1 -0.3 - 0.8 V 4.0V≦VCC≦5.5V “L” input voltage 2 VIL2 -0.3 - 0.2 x VCC V VCC≦4.0V “H” input voltage 1 VIH1 2.0 - VCC+0.3 V 4.0V≦VCC≦5.5V “H” input voltage 2 VIH2 0.7 x VCC - VCC+0.3 V VCC≦4.0V “L” output voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0V≦VCC≦5.5V “L” output voltage 2 VOL2 0 - 0.2 V IOL=100μA “H” output voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0V≦VCC≦5.5V “H” output voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100μA Input leak current ILI -1 - 1 µA VIN=0V to VCC Output leak current ILO -1 - 1 µA VOUT=0V to VCC, CS=0V ICC1 - - 3.0 mA fSK=2MHz, tE/W=5ms (WRITE) ICC2 - - 1.5 mA fSK=2MHz (READ) ICC3 - - 4.5 mA fSK=2MHz, tE/W=5ms (WRAL, ERAL) ISB - - 2 µA CS=0V, DO=OPEN Current consumption Standby current www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 2/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Operating Timing Characteristics (Ta=-40℃ to +105℃, VCC=2.5V to 5.5V) Parameter Symbol SK frequency SK “H” time SK “L” time CS “L” time CS setup time DI setup time CS hold time DI hold time Data “1” output delay time Data “0” output delay time Time from CS to output establishment Time from CS to High-Z Write cycle time Min. 230 230 200 50 100 0 100 - fSK tSKH tSKL tCS tCSS tDIS tCSH tDIH tPD1 tPD0 tSV tDF tE/W 2.5V≦VCC≦5.5V Typ. Max. 2 200 200 150 150 5 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ms ●Sync Data Input / Output Timing CS tCSS tSKH tSKL tCSH SK tDIS tDIH DI tPD1 t PD0 DO(READ) tDF DO(WRITE) STATUS VALID ○Data is taken by DI sync with the rise of SK. ○At read operation, data is output from DO in sync with the rise of SK. ○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area DO where CS is “H”, and valid until the next command start bit is input. And, while CS is “L”, DO becomes High-Z. ○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following operation mode. www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 3/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Block Diagram CS Power source voltage detection Command decode Control SK DI Clock generation Address buffer Command register 6bit 7bit 8bit 9bit 10bit Data register DO High voltage occurrence Write prohibition Address decoder 6bit 7bit 8bit 9bit 10bit R/W amplifier 16bit 16bit 1,024 bit 2,048 bit 4,096 bit 8,192 bit 16,384 bit EEPROM Dummy bit ●Pin Configurations TOP VIEW TOP VIEW NC GND DO DI Vcc NC 8 7 6 5 8 7 BR93AXXF-WM:SOP8 BR93AXXFJ-WM:SOP-J8 NC GND 6 5 BR93AXXRF-WM:SOP8 BR93AXXRFJ-WM:SOP-J8 BR93AXXRFVT-WM:TSSOP-B8 BR93AXXRFVM-WM:MSOP8 1 2 3 4 1 2 3 4 NC Vcc CS SK CS SK DI DO ●Pin Descriptions Pin name I/O Function VCC - Power source GND - All input / output reference voltage, 0V CS Input Chip select input SK Input Serial clock input DI Input Start bit, ope code, address, and serial data input DO Output NC - www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Serial data output, READY / BUSY internal condition display output Non connected terminal, Vcc, GND or OPEN 4/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Typical Performance Curves (The following characteristic data are typ. values.) Figure 2. L input voltage VIL (CS,SK,DI) Figure 1. H input voltage VIH (CS, SK, DI) Figure 3. L output voltage VOL-IOL (Vcc=2.5V) www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Figure 4. L output voltage VOL-IOL (Vcc=4.0V) 5/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Typical Performance Curves‐Continued Figure 6. H output voltage VOH-IOH (Vcc=4.0V) INPUT LEAK CURRENT : ILI (uA) OUTPUT LEAK CURRENT : ILO (uA) Figure 5. H output voltage VOH-IOH Figure 7. Input leak current ILI (CS, SK, DI) www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Figure 8. Output leak current ILO (DO) 6/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Typical Performance Curves‐Continued Figure 10. Consumption current at READ operation Icc2 (READ, fSK=2MHz) STAND BY CURRENT : ISB (uA) Figure 9. Current consumption at WRITE operation Icc1 (WRITE, fSK=2MHz) Figure 12. Consumption current at standby ISB Figure 11. Consumption current at WRAL operation Icc3 (WRAL, fSK=2MHz) www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 7/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Typical Performance Curves‐Continued Figure 13. SK frequency fSK Figure 14. SK high time tSKH Figure 15. SK low time tSKL Figure 16. CS low time tCS www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 8/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Typical Performance Curves‐Continued Figure 17. CS hold time tCSH Figure 18. CS setup time tCSS Figure 19. DI hold time tDIH www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Figure 20. DI setup time tDIS 9/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Typical Performance Curves‐Continued Figure 21. Data “0” output delay time tPD0 Figure 22. Output data “1” delay time tPD1 SUPPLY VOLTAGE : VCC (V) Figure 23. Time from CS to output establishment tSV www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Figure 24. Time from CS to High-Z tDF 10/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Typical Performance Curves‐Continued Figure 25. Write cycle time tE/W www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 11/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Description of Operations Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input), DO (serial data output), and CS (chip select) for device selection. When to connect one EEPROM to a microcontroller, connect it as shown in Figure 26 (a) or Figure 26 (b). When to use the input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure 26 (b) (Refer to page18.), and connection by 3 lines is available. In the case of plural connections, refer to Figure 26 (c). Microcontroller SK SK SK DO DI DO DI DI DO CS3 CS1 CS0 SK DO DI CS DO Figure 26-(a) Connection by 4 lines Figure 26-(b) Connection by 3 lines CS SK DI DO SK BR93AXX CS SK DI DO CS Microcontroller CS BR93AXX CS SK DI DO Microcontroller CS Device 1 Device 2 Device 3 Figure 26-(c) Connection example of plural devices Figure 26. Connection method with microcontroller Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called a start bit. After input of the start bit, input ope code, address and data. Address and data are input all in MSB first manners. “0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO of the microcontroller, input “0” before the start bit input, to control the bit width. ●Command Mode Command Read (READ) *1 Write enable (WEN) Write (WRITE) *2 Start bit 1 Ope code 10 1 00 1 01 BR93A46-WM Address BR93A56/66-WM BR93A76/86-WM A5,A4,A3,A2,A1,A0 A7,A6,A5,A4,A3,A2,A1,A0 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 1 1 * * * * A5,A4,A3,A2,A1,A0 1 1 * * * * * * A7,A6,A5,A4,A3,A2,A1,A0 1 1 * * * * * * * Data D15 to D0(READ DATA) * A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15 to D0(WRITE DATA) *2 0 1 * * * * 0 1 * * * * * * 0 1 * * * * * * * * D15 to D0(WRITE DATA) Write all (WRAL) 1 00 0 0 * * * * 0 0 * * * * * * 0 0 * * * * * * * * Write disable (WDS) 1 00 A5,A4,A3,A2,A1,A0 A7,A6,A5,A4,A3,A2,A1,A0 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 Erase (ERASE) 1 11 1 0 * * * * 1 0 * * * * * * 1 0 * * * * * * * * Chip erase (ERAL) 1 00 ・ Input the address and the data in MSB first manners. A7 of BR93A56-WM becomes Don't Care. ・ As for *, input either VIH or VIL. A9 of BR93A76-WM becomes Don't Care. *Start bit Acceptance of all the commands of this IC starts at recognition of the start bit. The start bit means the first “1” input after the rise of CS. *1 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and address data in significant order are sequentially output continuously. (Auto increment function) *2 When the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written. www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 12/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Timing Chart 1) Read cycle (READ) ～ ～ ～ ～ ～ ～ CS ～ ～ *1 1 4 n ～ ～ DI 2 ～ ～ 1 n+1 ～ ～ SK Am 0 A1 ～ ～ 1 A0 ～ ～ ～ ～ *2 BR93A46-WM : n=25, m=5 BR93A56-WM : n=27, m=7 BR93A66-WM BR93A76-WM : n=29, m=9 BR93A86-WM ～ ～ D14 D1 D0 D15 D14 ～ ～ D15 ～ ～ 0 DO High-Z *1 Start bit When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as a start bit, and the following operation is started. This is common to all the commands to described hereafter. Figure 27. Read cycle ○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK. This IC has an address auto increment function valid only at read command. This is the function where after the above read execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto increment, keep CS at “H”. 2) Write cycle (WRITE) ～ ～ ～ ～ ～ ～ tCS CS ～ ～ A1 A0 D15 D14 D1 D0 ～ ～ Am ～ ～ 1 ～ ～ 0 ～ ～ 1 n 4 ～ ～ DI 2 ～ ～ 1 ～ ～ ～ ～ SK STATUS BR93A46-WM : n=25, m=5 BR93A56-WM : n=27, m=7 BR93A66-WM BR93A76-WM : n=29, m=9 BR93A86-WM tSV BUSY READY ～ ～ DO High-Z tE/W Figure 28. Write cycle ○In this command, input 16bit data (D15 to D0) are written to designated addresses (Am to A0). The actual write starts by the fall of CS of D0 taken SK clock. When STATUS is not detected, (CS=”L” fixed) Max. 5ms in conformity with tE/W, and when STATUS is detected (CS=”H”), all commands are not accepted for areas where “L” (BUSY) is output from D0, therefore, do not input any command. 3) Write all cycyle (WRAL) ～ ～ ～ ～ ～ ～ tCS CS 1 D15 D14 D1 D0 ～ ～ 0 ～ ～ 0 ～ ～ 0 ～ ～ 1 ～ ～ DI n 5 ～ ～ 2 ～ ～ 1 ～ ～ ～ ～ SK STATUS BR93A46-WM : n=25 BR93A56-WM : n=27 BR93A66-WM BR93A76-WM : n=29 BR93A86-WM ～ ～ ～ ～ tSV BUSY READY ～ ～ DO High-Z Figure 29. Write all cycle tE/W ○In this command, input 16bit data is written simultaneously to all adresses. Data is not written continuously per one word but is written in bulk, the write time is only Max. 5ms in conformity with tE/W. www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 13/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) 4) Write enable (WEN) / disable (WDS) cycle ～ ～ CS 2 1 3 4 5 6 7 8 ～ ～ SK 1 0 0 ～ ～ DI ～ ～ ENABLE=1 1 DISABLE=0 0 BR93A46-WM : n=9 BR93A56-WM : n=11 BR93A66-WM BR93A76-WM : n=13 BR93A86-WM n DO High-Z Figure 30. Write enable (WEN) / disable (WDS) cycle ○ At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write disable command is executed or the power is turned off. However, the read command is valid irrespective of write enable / diable command. Input to SK after 6 clocks of this command is available by either “H” or “L”, but be sure to input it. ○ When the write enable command is executed after power on, write enable status gets in. When the write disable command is executed then, the IC gets in write disable status as same as at power on, and then the write command is canceled thereafter in software manner. However, the read command is executable. In write enable status, even when the write command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the write disable command after completion of write. 5) Erase cycle timing (ERASE) ～ ～ ～ ～ STATUS ～ ～ ～ ～ 1 ～ ～ DI n 4 2 ～ ～ 1 ～ ～ SK A3 A2 A1 A0 ～ ～ tSV ～ ～ BUSY READY ～ ～ DO BR93A46-WM : n=9, m=5 BR93A56-WM : n=11, m=7 BR93A66-WM BR93A76-WM : n=13, m=9 BR93A86-WM ～ ～ Am ～ ～ 1 ～ ～ 1 ～ ～ ～ ～ tCS CS High-Z Figure 31. Erase cycle timing tE/W ○In this command, data of the designated address is made into “1”. The data of the designated address becomes “FFFFh”. Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock. In ERASE, status can be detected in the same manner as in WRITE command. 6) Chip erase cycle timing (ERAL) tSV ～ ～ 0 ～ ～ 1 ～ ～ 0 ～ ～ 0 ～ ～ 1 n ～ ～ DI 4 ～ ～ 2 STATUS ～ ～ 1 ～ ～ SK BR93A46-WM : n=9 BR93A56-WM : n=11 BR93A66-WM BR93A76-WM : n=13 BR93A86-WM BUSY READY ～ ～ DO ～ ～ ～ ～ tCS CS High-Z tE/W Figure 32. Chip erase cycle timing ○In this command, data of all addresses is erased. Data of all addresses becomes ”FFFFh”. Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input. In ERAL, status can be detected in the same manner as in WRITE command. www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 14/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Application 1) Method to cancel each command ○READ Start bit Ope code 1bit 2bit Address*1 (In the case of BR93A46-WM) Data 6bit 16bit ＊1 Address is 8 bits in BR93A56-WM, BR93A66-WM Address is 10 bits in BR93A76-WM, BR93A86-WM Cancel is available in all areas in read mode. ・Method to cancel：cancel by CS=“L” Figure 33. READ cancel available timing ・25 Rise of clock ○WRITE, WRAL SK DI 25 24 D1 *2 D0 Enlarged figure Start bit Ope code 1bit Address 2bit *1 Data 6bit tE/W (In the case of BR93A46-WM) 16bit b a a：From start bit to 25 clock rise＊2 Cancel by CS=“L” b：25 clock rise and after＊2 Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. And when SK clock is input continuously, cancellation is not available. 29 Rise of clock *2 SK 30 DI 28 29 *1 Address is 8 bits in BR93A56-WM, BR93A66-WM Address is 10 bits in BR93A76-WM BR93A86-WM *2 27 clocks in BR93A56-WM, BR93A66-WM 29 clocks in BR93A76-WM BR93A86-WM 31 D0 D1 b c a Enlarged figure Start bit 1bit Address Ope code 2bit 10bit *1 Data tE/W (In the case of BR93A86-WM) 16bit a b c a：From start bit to 29 clock rise Cancel by CS=“L” b：29 clock rise and after Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. c：30 clock rise and after Cancel by CS=“L” However, when write is started in b area (CS is ended), cancellation is not available by any means. And when SK clock is output continuously is not available. Note 1) If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. Note 2) If CS is started at the same timing as that of the SK rise, write execution/cancel becomes unstable, therefore, it is recommended to fail in SK=”L” area. As for SK rise, recommend timing of tCSS/tCSH or higher. Figure 34. WRITE, WRAL cancel available timing www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 15/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ○ERASE, ERAL 9 Rise of clock＊2 8 SK DI A1 9 A0 Enlarged figure Start bit 1bit Ope code Address 2bit *1 (In the case of BR93A46-WM) 1/2 tE/W 6bit a b a：From start bit to 9 clock rise＊2 Cancel by CS=“L” b：9 clock rise and after＊2 Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. And when SK clock is input continuously, cancellation is not available. ＊1 Address is 8 bits in BR93A56-WM, BR93A66-WM Address is 10 bits in BR93A76-WM ＊2 11 clocks in BR93A56-WM, BR93A66-WM 13 clocks in BR93A76-WM 13 Rise of clock 12 SK DI 1bit Ope code 2bit Address *1 14 15 D1 a Start bit 13 *2 tE/W c b Enlarged figure (In the case of BR93A86-WM) 10bit b a c a：From start bit to 13 clock rise Cancel by CS=“L” Note 1) If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. b：13 clock rise and after Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. Note 2) If CS is started at the same timing as that of the SK rise, write execution/cancel becomes unstable, therefore, it is recommended to fail in SK=”L” area. As for SK rise, recommend timing of tCSS/tCSH or higher. c：14 clock rise and after Cancel by CS=“L” However, when write is started in b area (CS is ended), cancellation is not available by any means. And when SK clock is output continuously is not available. Figure 35. ERASE, ERAL cancel available timing 2) At standby ○Standby current When CS is “L”, SK input is “L”, DI input is “H”, and even with middle electric potential, current does not increase. ○Timing As shown in Figure 36, when SK at standby is “H”, if CS is started, DI status may be read at the rise edge. At standby and at power ON/OFF, when to start CS, set SK input or DI input to “L” status. (Refer to Figure 37) If CS is started when SK=”L” or DI=”L”, a start bit is recognized correctly. CS=SK=DI=”H” Wrong recognition as a start bit CS CS Start bit input SK SK DI DI Figure 37. Normal operating timing Figure 36. Wrong operating timing www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Start bit input 16/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) 3) Equivalent circuit Output circuit Input citcuit RESET int. CSint. CS DO OEint. Figure 39. Input circuit (CS) Figure 38. Output circuit (DO) Input circuit Input circuit CS int. CS int. DI SK Figure 40. Input circuit (DI) Figure 41. Input circuit (SK) 4) I/O peripheral circuit 4-1) Pull down CS. By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented. ○Pull down resistance Rpd of CS pin To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC. VOHM IOHM VOHM ≧ VIHE Rpd ≧ Microcontroller EEPROM VOHM “H” output Rpd ・・・② Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA, from the equation ①, 2.4 Rpd ≧ -3 2×10 VIHE IOHM ・・・① “L” input ∴ Rpd ≧ 1.2 [kΩ] With the value of Rpd to satisfy the above equation, VOHM becomes 2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied. Figure 42. CS pull down resistance ・VIHE : EEPROM VIH specifications ・VOHM : Microcontroller VOH specifications ・IOHM : Microcontroller IOH specifications 4-2) DO is available in both pull up and pull down. Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to pull down and pull up DO. When there is no influence upon the microcontroller operations, DO may be OPEN. If DO is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this as a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such output, pull up DO pin for improvement. CS CS “H” SK SK Enlarged DI D0 DI High-Z High-Z READY DO BUSY DO BUSY CS=SK=DI=”H” When DO=OPEN Improvement by DO pull up DO READY BUSY CS=SK=DI=”H” When DO=pull up Figure 43. READY output timing at DO=OPEN www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 17/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ○Pull up resistance Rpu and pull down resistance Rpd of DO pin As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC. Microcontroller Vcc－VOLE Rpu ≧ IOLE EEPROM Rpu VILM VOLE ≦ IOLE VOLE “L” output ∴ Rpu ≧ ・VOLE : EEPROM VOL specifications ・IOLE : EEPROM IOL specifications ・VILM : Microcontroller VIL specifications VOHE Rpd ≧ ・・・⑤ IOHE EEPROM VOHE ≧ VIHM VOHE Rpd IOHE 2.2 [kΩ] With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied. Figure 44. DO pull up resistance “H” input ・・・④ Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V, from the equation ③, 5－0.4 Rpu ≧ 2.1×10-3 “L” input Microcontroller VILM ・・・③ VIHM ・・・⑥ Example) When VCC =5V, VOHE=Vcc－0.2V, IOHE=0.1mA, VIHM=Vcc×0.7V from the equation ⑤, 5－0.2 Rpd ≧ -3 0.1×10 “H” output ∴ Rpd ≧ 48 [kΩ] With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied. Figure 45. DO pull down resistance ・VOHE : EEPROM VOH specifications ・IOHE : EEPROM IOH specifications ・VIHM : Microcontroller VIH specifications 5) READY / BUSY status display (DO terminal) (common to BR93A46-WM,BR93A56-WM, BR93A66-WM, BR93A76-WM, BR93A86-WM) This display outputs the internal status signal. When CS is started after tCS (Min.200ns) from CS fall after write command input, “H” or “L” is output. R/B display=“L” (BUSY) = write under execution (DO status) After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically. And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted. R/B display = “H” (READY) = command wait status (DO status) Even after tE/W (max.5ms) from write of the memory cell, the following command is accepted. Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore, DI=“L” in the area CS=“H”. (Especially, in the case of shared input port, attention is required.) *Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted. Therefore, status READY output is cancelled, and malfunction and mistake write may be made. STATUS CS SK CLOCK DI WRITE INSTRUCTION DO tSV High-Z READY BUSY Figure 46. R/B status output timing chart www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 18/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) 6) When to directly connect DI and DO This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart, meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control line. Microcontroller EEPROM DI/O PORT DI R DO Figure 47. DI, DO control line common connection ○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input. Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the same time in the following points. (1) 1 clock cycle to take in A0 address data at read command Dummy bit “0” is output to DO terminal. →When address data A0 = “1” input, through current route occurs. EEPROM CS input “H” EEPROM SK input A1 EEPROM DI input A0 Collision of DI input and DO output EEPROM DO output 0 High-Z Microcontroller DI/O port A1 D15 D14 D13 A0 Microcontroller output High-Z Microcontroller input Figure 48. Collision timing at read data output at DI, DO direct connection (2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output. When the next start bit input is recognized, “HIGH-Z” gets in. →Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”, READY output “H” is output from DO terminal, and through current route occurs. Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted. ～ ～ EEPROM SK input Write command EEPROM DI input Write command EEPROM DO output Write command ～ ～ Write command ～ ～ EEPROM CS input ～ ～ ～ ～ ～ ～ READY ～ ～ ～ ～ BUSY READY High-Z Collision of DI input and DO output BUSY Microcontroller output Microcontroller input ～ ～ READY Write command ～ ～ Microcontroller DI/O port Microcontroller output Figure 49. Collision timing at DI, DO direct connection Note) As for the case (2), attention must be paid to the following. When status READY is output, DO and DI are shared, DI=”H” and the microcontroller DI/O=”High-Z” or the microcontroller DI/O=”H”,if SK clock is input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at status READY output, set SK=“L”, or start CS within 4 clocks after “H” of READY signal is output. Start bit CS Because DI=”H”, set SK=”L” at CS rise. SK DI READY DO High-Z Figure 50. Start bit input timing at DI, DO direct connection www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 19/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ○Selection of resistance value R The resistance R becomes through current limit resistance at data collision. When through current flows, noises of power source line and instantaneous stop of power source may occur. When allowable through current is defined as I, the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence upon basic operations. (1) Address data A0 = “1” input, dummy bit “0” output timing (When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI) ・Make the through current to EEPROM 10mA or below. ・See to it that the level VIH of EEPROM should satisfy the following. Conditions Microcontroller VOHM ≦ VIHE EEPROM VOHM ≦ IOHM×R + VOLE DI/O PORT DI At this moment, if VOLE=0V, VOHM “H” output VOHM ≦ IOHM×R R IOHM VOHM ・・・⑦ IOHM ・VIHE : EEPROM VIH specifications ・VOLE : EEPROM VOL specifications ・VOHM : Microcontroller VOH specifications ・IOHM : Microcontroller IOH specifications ∴ DO VOLE “L” output R ≧ Figure 51. Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output) (2) DO status READY output timing (When the microcontroller DI/O is “L”, EEPROM DO output “H”, and “L” is input to DI) ・Set the EEPROM input level VIL so as to satisfy the following. Conditions Microcontroller “L” output EEPROM DI/O PORT VOLM ≧ VILE DI VOLM ≧ VOHE – IOLM×R VOLM As this moment, VOHE=Vcc R IOHM VOLM ≧ Vcc – IOLM×R DO VOHE ∴ “H” output ・VILE ・VOHE ・VOLM ・IOLM Vcc – VOLM ・・・⑧ IOLM : EEPROM VIL specifications : EEPROM VOH specifications : Microcontroller VOL specifications : Microcontroller IOL specifications Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA, From the equation ⑦, R ≧ R ≧ ∴ R ≧ From the equation⑧, VOHM R ≧ IOHM 5 R ≧ 0.4×10-3 12.5 [kΩ] ・・・⑨ ∴ R ≧ Vcc – VOLM IOLM 5 – 0.4 2.1×10-3 2.2 [kΩ] ・・・⑩ Therefore, from the equations ⑨ and ⑩, ∴ R ≧ 12.5 [kΩ] Figure 52. Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output) www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 20/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) 7) Notes on power ON/OFF ・At power ON/OFF, set CS “L”. When CS is “H”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may cause malfunction, mistake write or so. To prevent these, at power ON, set CS “L”. (When CS is in “L” status, all inputs are cancelled.) And at power decline, owing to power line capacity and so forth, low power status may continue long. At this case too, owing to the same reason, malfunction, mistake write may occur, therefore, at power OFF too, set CS “L”. VCC VCC GND VCC CS GND Bad example Good example Figure 53. Timing at power ON/OFF (Bad example) CS pin is pulled up to Vcc. (Good example) It is “L” at power ON/OFF. In this case, CS becomes “H” (active status), and EEPROM may have malfunction, mistake write owing to noise and the likes. Even when CS input is High-Z, the status becomes like this case, which please note. Set 10ms or higher to recharge at power OFF. When power is turned on without observing this condition, IC internal circuit may not be reset, which please note. ○POR citcuit This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR operation, it gets in write disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is “H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure operations, observe the follwing conditions. 1. Set CS=”L” 2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit operation. tR Recommended conditions of tR, tOFF, Vbot VCC tR tOFF Vbot 10ms or below 10ms or higher 0.3V or below tOFF Vbot 100ms or below 10ms or higher 0.2V or below 0 Figure 54. Rise waveform diagram ○LVCC circuit LVCC (VCC-Lockout) circuit prevents data rewrite operation at low power, and prevents wrong write. At LVCC voltage (Typ.=1.2V) or below, it prevent data rewrite. 8) Noise countermeasures ○VCC noise (bypass capacitor) When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a by pass capacitor (0.1µF) between IC VCC and GND, At that moment, attach it as close to IC as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND. ○SK noise When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about 0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible. www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 21/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Notes for Use (1) Described numeric values and data are design representative values, and the values are not guaranteed. (2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC. (3) Absolute Maximum Ratings If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded, IC may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to IC. (4) GND electric potential Set the voltage of GND terminal lowest at any operating condition. Make sure that each terminal voltage is not lower than that of GND terminal in consideration of transition status. (5) Heat design In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin. (6) Terminal to terminal shortcircuit and wrong packaging When to package IC onto a board, pay sufficient attention to IC direction and displacement. Wrong packaging may destruct IC. And in the case of shortcircuit between IC terminals and terminals and power source, terminal and GND owing to foreign matter, IC may be destructed. (7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently . www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 22/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Ordering Information Product Code Description B R 9 3 A x x x x - W M x BUS Type 93：Microwire Operating temperature -40℃ to +105℃ Capacity 46=1K 76=8K 56=2K 86=16K 66=4K Package type F, RF : SOP8 FJ, RFJ : SOP-J8 RFVT : TSSOP-B8 RFVM : MSOP8 W : Double cell M : For Automotive Application Package specifications E2 ：Embossed tape and reel (SOP8, SOP-J8, TSSOP-B8) TR ：Embossed tape nad reel (MSOP8) ●Lineup Capacity Package Type SOP8 1K SOP-J8 TSSOP-B8 MSOP8 SOP8 2K SOP-J8 TSSOP-B8 MSOP8 SOP8 4K SOP-J8 TSSOP-B8 MSOP8 www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Quantity Capacity Package Type Quantity SOP8 Reel of 2500 8K Reel of 3000 Reel of 2500 SOP-J8 TSSOP-B8 MSOP8 SOP8 Reel of 2500 16K Reel of 3000 Reel of 2500 SOP-J8 TSSOP-B8 MSOP8 Reel of 3000 Reel of 3000 Reel of 2500 Reel of 3000 23/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 x Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Physical Dimension Tape and Reel Information SOP8 6 5 1 2 3 4 0.3MIN 7 4.4±0.2 6.2±0.3 8 +6° 4° −4° 0.9±0.15 5.0±0.2 (MAX 5.35 include BURR) 0.595 1.5±0.1 +0.1 0.17 -0.05 S S 0.11 0.1 1.27 0.42±0.1 (Unit : mm) Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 ) ∗ Order quantity needs to be multiple of the minimum quantity. 24/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Physical Dimension Tape and Reel Information - Continued SOP-J8 4.9±0.2 (MAX 5.25 include BURR) 7 6 5 1 2 3 4 0.45MIN 8 3.9±0.2 6.0±0.3 +6° 4° −4° 0.545 0.2±0.1 1.375±0.1 S 0.175 1.27 0.42±0.1 0.1 S (Unit : mm) Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 ) ∗ Order quantity needs to be multiple of the minimum quantity. 25/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Physical Dimension Tape and Reel Information – Continued TSSOP-B8 3.0±0.1 (MAX 3.35 include BURR) 7 6 5 1 2 3 4 4±4 1.0±0.2 0.5 ± 0.15 1PIN MARK 0.525 +0.05 0.145 –0.03 S 0.1 ± 0.05 1.0 ± 0.05 1.2MAX 6.4 ± 0.2 4.4 ± 0.1 8 0.08 S +0.05 0.245 –0.04 0.08 M 0.65 (Unit : mm) Tape Embossed carrier tape Quantity 3000pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 ) ∗ Order quantity needs to be multiple of the minimum quantity. 26/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Physical Dimension Tape and Reel Information – Continued MSOP8 4.0±0.2 2.8±0.1 8 7 6 5 0.6±0.2 +6° 4° −4° 0.29±0.15 2.9±0.1 (MAX 3.25 include BURR) 1 2 3 4 1PIN MARK +0.05 0.145 –0.03 0.475 0.08±0.05 0.75±0.05 0.9MAX S +0.05 0.22 –0.04 0.08 S 0.65 (Unit : mm) Tape Embossed carrier tape Quantity 3000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1pin Direction of feed Reel www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 ∗ Order quantity needs to be multiple of the minimum quantity. 27/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Marking Diagrams SOP8(TOP VIEW) TSSOP-B8(TOP VIEW) SOP-J8(TOP VIEW) Part Number Marking Part Number Marking LOT Number LOT Number 1PIN MARK 1PIN MARK Part Number Marking MSOP8(TOP VIEW) Part Number Marking LOT Number LOT Number 1PIN MARK 1PIN MARK ●Marking Information Capacity 1K 2K 4K 8K 16k Product Name Marking A46 RA46 A46 RA46 RA46 RA46 A56 RA56 A56 RA56 RA56 RA56 A66 RA66 A66 RA66 RA66 RA66 A76 RA76 A76 RA76 RA76 RA76 A86 RA86 A86 RA86 RA86 RA86 www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Package Type SOP8 SOP-J8 TSSOP-B8 MSOP8 SOP8 SOP-J8 TSSOP-B8 MSOP8 SOP8 SOP-J8 TSSOP-B8 MSOP8 SOP8 SOP-J8 TSSOP-B8 MSOP8 SOP8 SOP-J8 TSSOP-B8 MSOP8 28/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Datasheet BR93Axx-WM (1K 2K 4K 8K 16K) ●Revision History Date Revision Changes 31.Aug.2012 001 New Release 4.Mar.2013 002 6.Nov.2013 003 P.2 Add a Endurance limit at 60℃ P.1 Added AEC-Q100 Qualified P.2 Changed Unit of Pd P.23 Update Product Code Description www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 29/29 TSZ02201-0R1R0G100150-1-2 6.Nov.2013 Rev.003 Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001