Datasheet
Serial EEPROM Series Automotive EEPROM
125℃ Operation Microwire BUS EEPROM(3-Wire)
BR93Hxx-WC
(2K 4K 8K 16K)
●General Description
BR93Hxx-WC is a serial EEPROM of serial 3-line interface method.
●Features
Conforming to Microwire BUS
Withstands electrostatic voltage 8kV,
(HBM method typ.,except BR93H66RFVM-WC)
Wide temperature range -40℃ to +125℃
Same package line up and same pin configuration
2.7V to 5.5V single supply voltage operation
Address auto increment function at read operation
Write mistake prevention function
¾ Write prohibition at power on
¾ Write prohibition by command code
¾ Write mistake prevention circuit at low voltage
Program cycle auto delete and auto end function
Program condition display by READY / BUSY
Low current consumption
¾ At write operation (at 5V)
: 0.6mA (Typ.)
¾ At read operation (at 5V)
: 0.6mA (Typ.)
¾ At standby condition (at 5V) : 0.1μA(Typ.)(CMOS input)
Built-in noise filter CS, SK, DI terminals
High reliability by ROHM original Double-Cell structure
Data retention for 20 years (Ta≦125℃)
Endurance up to 300,000 times (Ta≦125℃)
Data at shipment all address FFFFh
AEC-Q100 Qualified
●Packages W(Typ.) x D(Typ.) x H(Max.)
SOP8
SOP-J8
5.00mm x 6.20mm x 1.71mm
4.90mm x 6.00mm x 1.65mm
MSOP8
2.90mm x 4.00mm x 0.90mm
●BR93Hxx-WC
Package type
SOP8
SOP-J8
MSOP8
RF
RFJ
RFVM
●
●
Capacity
Bit format
Type
2Kbit
128×16
BR93H56-WC
Power source
voltage
2.7V to 5.5V
4Kbit
256×16
BR93H66-WC
2.7V to 5.5V
●
●
8Kbit
512×16
BR93H76-WC
2.7V to 5.5V
●
●
16Kbit
1K×16
BR93H86-WC
2.7V to 5.5V
●
●
○Product structure：Silicon monolithic integrated circuit
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･14･001
●
○This product is not designed protection against radioactive rays
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Impressed voltage
VCC
Permissible dissipation
Storage temperature range
Operating temperature range
Terminal voltage
Pd
Tstg
Topr
‐
Limits
-0.3 to +6.5
0.56 (SOP8)
0.56 (SOP-J8)
0.38 (MSOP8)
-65 to +150
-40 to +125
-0.3 to VCC+0.3
Unit
V
Remarks
When using at Ta=25℃ or higher, 4.5mW, to be reduced per 1℃.
W
When using at Ta=25℃ or higher, 4.5mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 3.1mW, to be reduced per 1℃.
℃
℃
V
●Memory Cell Characteristics(VCC=2.7V to 5.5V)
Parameter
Endurance *1
Data retention *1
Min.
1,000,000
500,000
300,000
40
20
Limit
Typ.
-
Max.
-
Limit
Limit
Times
Times
Times
Years
Years
Ta≦85℃
Ta≦105℃
Ta≦125℃
Ta≦25℃
Ta≦125℃
*1：Not 100％ TESTED
●Recommended Operating Ratings
Parameter
Power source voltage
Input voltage
Symbol
VCC
VIN
Limits
2.7 to 5.5
0 to VCC
Unit
V
●Electrical Characteristics(Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.7V to 5.5V)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
“L” input voltage
VIL
-0.3
0.3x VCC
V
“H” input voltage
VIH
0.7x VCC
VCC +0.3
V
IOL=2.1mA, 4.0V≦VCC≦5.5V
“L” output voltage 1
VOL1
0
0.4
V
“L” output voltage 2
VOL2
0
0.2
V
IOL=100μA
“H” output voltage 1
VOH1
2.4
VCC
V
IOH=-0.4mA, 4.0V≦VCC≦5.5V
“H” output voltage 2
VOH2
VCC -0.2
VCC
V
IOH=-100μA
Input leak current
ILI
-10
10
μA
VIN=0V to VCC
Output leak current
ILO
-10
10
μA
VOUT=0V to VCC, CS=0V
ICC1
3.0
mA
fSK=1.25MHz, tE/W=10ms (WRITE)
Current consumption
ICC2
1.5
mA
fSK=1.25MHz (READ)
ICC3
4.5
mA
fSK=1.25MHz, tE/W=10ms (WRAL)
Standby current
ISB
0.1
10
μA
CS=0V, DO=OPEN
●Operating Timing Characteristics (Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.7V to 5.5V)
Parameter
Symbol
Min.
Typ.
Max.
SK frequency
fSK
1.25
SK “H” time
tSKH
250
SK “L” time
tSKL
250
CS “L” time
tCS
200
CS setup time
tCSS
200
DI setup time
tDIS
100
CS hold time
tCSH
0
DI hold time
tDIH
100
Data “1” output delay time
tPD1
300
Data “0” output delay time
tPD0
300
Time from CS to output establishment
tSV
200
Time from CS to High-Z
tDF
200
Write cycle time
tE/W
7
10
Write cycle time(BR93H66RFVM-WC)
tE/W
5
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Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
TSZ02201-0R1R0G100160-1-2
6.Nov.2013 Rev.002
Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Sync data input / output timing
CS
tCSS
tSKH
tSKL
tCSH
SK
tDIS
tDIH
DI
tPD1
t PD0
DO(READ)
tDF
DO(WRITE)
STATUS VALID
○Data is taken by DI sync with the rise of SK.
○At read operation, data is output from DO in sync with the rise of SK.
○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is “H”, and valid until the next command start bit is input. And, white CS is “L”, DO becomes High-Z.
○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following operation
mode.
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Block Diagram
Power source voltage detection
Command decode
CS
Control
SK
Clock generation
Address
buffer
Command
register
DI
Data
register
DO
High voltage occurrence
Write
prohibition
Address
decoder
7bit
8bit
9bit
10bit
7bit
8bit
9bit
10bit
R/W
amplifier
16bit
2,048 bit
4,096 bit
8,192 bit
16,384 bit
EEPROM
16bit
Dummy bit
●Pin Configurations
TOP VIEW
TOP VIEW
VCC
NC
TEST
GND
VCC
8
7
6
5
8
2
CS
SK
3
DI
7
TEST1
GND
6
5
BR93H66RF-WC:SOP8
BR93H66RFJ-WC:SOP-J8
BR93H66RFVM-WC:MSOP8
BR93H76RF-WC:SOP8
BR93H76RFJ-WC:SOP-J8
BR93H86RF-WC:SOP8
BR93H86RFJ-WC:SOP-J8
BR93H56RF-WC:SOP8
BR93H56RFJ-WC:SOP-J8
1
TEST2
1
4
CS
DO
2
3
4
SK
DI
DO
●Pin Descriptions
Pin name
I/O
Vcc
-
Power source
GND
-
All input / output reference voltage, 0V
CS
Input
Chip select input
SK
Input
Serial clock input
DI
Input
Start bit, ope code, address, and serial data input
DO
Output
NC
-
Non connected terminal, Vcc, GND or OPEN
TEST1
-
TEST terminal, GND or OPEN
TEST2
-
TEST terminal, Vcc, GND or OPEN
TEST
-
TEST terminal, GND or OPEN
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©2012 ROHM Co., Ltd. All rights reserved.
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Function
Serial data output, READY / BUSY internal condition display output
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Typical Performance Curves
(The following characteristic data are Typ. values.)
Figure 2. L input voltage VIL (CS, SK, DI)
Figure 1. H input voltage VIH (CS, SK, DI)
Figure 4. L output voltage VOL-IOL
(VCC=4.0V)
Figure 3. L output voltage VOL-IOL (VCC=2.7)
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 5. H output voltage VOH-IOH
(VCC=2.7)
Figure 6. H output voltage VOH-IOH (VCC=4.0V)
Figure 7. Input leak current ILI (CS, SK, DI)
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Figure 8. Output leak current ILO (DO)
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 9. Current consumption at WRITE Operation
ICC1 (WRITE, fSK=1.25MHz)
Figure 11. Consumption current at WRAL operation
ICC3 (WRAL, fSK=1.25MHz)
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TSZ22111･15･001
Figure 10. Consumption current at READ Operation
ICC2 (READ, fSK=1.25MHz)
Figure 12. Consumption current at standby condition
ISB
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 14. SK high time tSKH
Figure 13. SK frequency fSK
Figure 16. CS low time tCS
Figure 15. SK low time tSKL
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 17. CS setup time tCSS
Figure 18. DI setup time tDIS
Figure 19. DI hold time tDIH
Figure 20. CS hold time tCSH
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Typical Performance Curves‐Continued
Figure 21. Data “1” output delay time tPD1
Figure 22. Data “0” output delay time tPD0
Figure 23. Time from CS to output establishment
tSV
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Figure 24. Time from CS to High-Z tDF
TSZ02201-0R1R0G100160-1-2
6.Nov.2013 Rev.002
Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Typical Performance Curves‐Continued
W R ITE C Y C LE TIM E : tE/W
(m s)
6
SPEC
5
Ta=125℃
4
3
Ta=25℃
Ta=-40℃
2
1
0
2
6
Figure 26. Write cycle time tE/W
(BR93H66RFVM-WC)
Figure 25. Write cycle time tE/W
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TSZ22111･15･001
3
4
5
SUPPLY VOLTAGE : Vcc(V)
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Description of Operations
Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input), DO (serial data output), and
CS (chip select) for device selection.
When to connect one EEPROM to a microcontroller, connect it as shown in Figure 27-(a) or Figure 27-(b). When to use the
input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure 27-(b) (Refer
to page 16.), and connection by 3 lines is available.
In the case of plural connections, refer to Figure 27-(c).
Microcontroller
BR93HXX
CS
CS
CS
CS
SK
SK
SK
SK
DO
DI
DO
DI
DI
DO
CS3
CS1
CS0
SK
DO
DI
DO
Figure 27-(a) Connection by 4 lines
Figure 27-(b) Connection by 3 lines
CS
SK
DI
DO
Microcontroller
CS
SK
DI
DO
BR93HXX
CS
SK
DI
DO
Microcontroller
Device 1
Device 2
Device 3
Figure 27-(c) Connection example of plural devices
Figure 27. Connection method with microcontroller
Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called a start bit.
After input of the start bit, input ope code, address and data. Address and data are input all in MSB first manners.
“0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO of
the microcontroller, input “0” before the start bit input, to control the bit width.
●Command Mode
Command
Read (READ)
*1
Write enable (WEN)
Write (WRITE)
Write all (WRAL)
*2
*2,3
Write disable (WDS)
Start
bit
1
Ope
code
10
1
1
1
00
01
00
1
00
Address
Data
BR93H56/66-WC
BR93H76/86-WC
A7,A6,A5,A4,A3,A2,A1,A0
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
1 1
* * * * * *
1 1
* * * * * *
D15 to D0(READ DATA)
* *
A7,A6,A5,A4,A3,A2,A1,A0
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
D15 to D0(WRITE DATA)
0 1
* * * * *
0 1
* * * * * B2,B1,B0
D15 to D0(WRITE DATA)
0 0
* * * * * *
0 0
* * * * * *
B0
・ Input the address and the data in MSB first manners.
・ As for *, input either VIH or VIL.
*Start bit
Acceptance of all the commands of this IC starts at recognition of the start bit.
The start bit means the first “1” input after the rise of CS.
* *
A7 and B0 of BR93H56-WC becomes Don't Care.
A9 and B2 of BR93H76-WC becomes Don't Care.
*1
As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and
address data in significant order are sequentially output continuously. (Auto increment function)
*2 When the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written.
*3 For the write all command, data written in memory cell of the areas designated by B2, B1, and B0, are automatically
deleted, and input data is written in bulk.
●Write All Area
B2 B1 B0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Write area
000h to 07Fh
080h to 0FFh
100h to 17Fh
180h to 1FFh
200h to 27Fh
280h to 2FFh
300h to 37Fh
380h to 3FFh
Designation of B2, B1, and B0
H56
＊
＊
＊
H66
＊
＊
B0
H76
＊
B1
B0
H86
B2
B1
B0
・The write all command is written in bulk in 2Kbit unit.
The write area can be selected up to 3bit. Confirm the settings and write areas of the above B2, B1, and B0.
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Timing Chart
～
～
～
～
～
～
1) Read cycle (READ)
CS
～
～
*1
1
4
n
～
～
DI
2
～
～
1
n+1
～
～
SK
Am
0
A1
～
～
1
BR93H56/66-WC : n=27, m=7
BR93H76/86-WC : n=29, m=9
A0
～
～
～
～
*2
～
～
D14
D0
D1
D15 D14
～
～
D15
～
～
0
DO
High-Z
*2
The following address data output
(auto increment function)
*1 Start bit
When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as a
start bit, and the following operation is started. This is common to all the commands to described hereafter.
Figure 28. Read cycle
○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in
sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK.
This IC has address auto increment function valid only at read command. This is the function where after the above read
execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto increment,
keep CS at “H”.
2) Write cycle (WRITE)
～
～
～
～
～
～
tCS
CS
～
～
A1
D15
A0
D14
D1
D0
～
～
Am
BR93H56/66-WC : n=27, m=7
BR93H76/86-WC : n=29, m=9
～
～
1
～
～
0
～
～
1
n
4
～
～
DI
2
～
～
1
～
～
～
～
SK
STATUS
tSV
BUSY READY
～
～
DO
High-Z
Figure 29. Write cycle
tE/W
○In this command, input 16bit data (D15 to D0) are written to designated addresses (Am to A0). The actual write starts by
the fall of CS of D0 taken SK clock(n-th clock from the start bit input), to the rise of the (n+1)-th clock.
When STATUS is not detected, (CS="L" fixed) Max. 10ms(Max.5ms:BR93H66RFVM-WC) in conformity with tE/W, and
when STATUS is detected (CS="H"), all commands are not accepted for areas where "L" (BUSY) is output from D0,
therefore, do not input any command.
Write is not made even if CS is started after input of clock after (n+1)-th clocks.
Note) Take tSKH or more from the rise of the n-th clock to the fall of CS.
3) Write all cycle (WRAL)
tCS
CS
SK
1
DI
1
2
0
5
0
0
1
m
B2
STATUS
BR93H56/66-WC : n=27, m=9
BR93H76/86-WC : n=29, m=11
n
B1
B0
D15
D1
D0
tSV
DO
BUSY
READY
High-Z
Figure 30. Write all cycle
tE/W
○In this command, input 16bit data is written simultaneously to designated block for 128 words. Data is writen in bulk at a
write time of only Max. 10ms(Max.5ms:BR93H66RFVM-WC) in conformity with tE/W. When writing data to all addresses,
designate each block by B2, B1, and B0, and execute write. Write time is Max.10ms(Max.5ms:BR93H66RFVM-WC). The
actual write starts by the fall of CS from the rise of D0 taken at SK clock (n-th clock from the start bit input), to the rise of
the (n+1)-th clock. When CS is ended after clock input after the rise of the (n+1)-th clock, command is cancelled, and write
is not completed.
Note)Take tSKH or more from the rise of the n-th clock to the fall of CS.
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
4) Write enable (WEN) / disable (WDS) cycle
～
～
CS
1
2
3
4
5
6
7
8
～
～
SK
1
0
0
～
～
DI
BR93H56/66-WC : n=11
BR93H76/86-WC : n=13
～
～
ENABLE=1 1
DISABLE=0 0
n
DO
High-Z
Figure 31. Write enable (WEN) / disable (WDS) cycle
○At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write
command, it is necessary to execute the write enable command. And, once this command is executed,
it is valid unitl the write disable command is executed or the power is turned off. However, the read
command is valid irrespective of write enable / disable command. Input to SK after 6 clocks of this
command is available by either “H” or “L”, but be sure to input it.
○When the write enable command is executed after power on, write enable status gets in. When the
write disable command is executed then, the IC gets in write disable status as same as at power on,
and then the write command is cancelled thereafter in software manner. However, the read command is
executable. In write enable status, even when the write command is input by mistake, write is started.
To prevent such a mistake, it is recommended to execute the write disable command after completion
of write.
●Application
1) Method to cancel each command
○READ
Start bit
Ope code
1bit
Address
2bit
*1
*1 Address is 8 bits in BR93H56-WC, and BR93H66-WC.
Address is 10 bits in BR93H76-WC, and BR93H86-WC.
Data
8bit
16bit
Cancel is available in all areas in read mode.
●Method to cancel：cancel by CS=“L”
Figure 32. READ cancel available timing
○WRITE, WRAL
・Rise of 27clock
SK
DI
26
D1
a
27
*2
29
28
D0
b
c
Enlarged figure
Start bit
1bit
Ope code
Address
2bit
8bit
*1
Data
16bit
a
b
c
*1
a：From start bit to 27 clock rise
Cancel by CS=“L”
*2
b：27 clock rise and after *2
Cancellation is not available by any means. If Vcc is made OFF in this area,
designated address data is not guaranteed, therefore write once again.
c：28 clock rise and after *3
Cancel by CS=“L”
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is input continuously, cancellation is not available.
Figure 33. WRITE, WRAL cancel available timing
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tE/W
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*3
Address is 8 bits in BR93H56/66-WC
Address is 10 bits in BR93H76/86-WC
27 clocks in BR93H56/66-WC
29 clocks in BR93H76/86-WC
28 clocks in BR93H56/66-WC
30 clocks in BR93H76/86-WC
Note 1) If Vcc is made OFF in this area,
designated address data is not guaranteed,
therefore write once again.
Note 2) If CS is started at the same timing as that of
the SK rise, write execution/cancel becomes
unstable, therefore, it is recommended to fail in
SK=”L” area. As for SK rise, recommend timing of
tCSS/tCSH or higher.
TSZ02201-0R1R0G100160-1-2
6.Nov.2013 Rev.002
Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
2) Equivalent circuit
○Output circuit
DO
OEint.
Figure 34.
Output circuit (DO)
○ Input circuit
RESET int.
LPF
CS
TEST1
(TEST)
CSint.
TESTint.
EN
Figure 35. Input circuit (CS)
Figure 36. Input circuit (TEST1, TEST)
EN
TEST2
SK
DI
LPF
SK(DI)int.
Figure 38. Input circuit (TEST2)
Figure 37. Input circuit (SK, DI)
3)
I/O peripheral circuit
3-1) Pull down CS.
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
Refer to the item 6) Notes at power ON/OFF in page 20.
○Pull down resistance Rpd of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary.
Select an appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC.
Rpd ≧
Microcontroller
EEPROM
VOHM
“H” output
VIHE
IOHM
Rpd
“L” input
VOHM ≧
・・・①
VIHE
・・・②
Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
from the equation ①,
2.4
Rpd ≧
-3
2×10
∴
Figure 39. CS pull down resistance
VOHM
IOHM
Rpd ≧
1.2 [kΩ]
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
・VIHE : EEPROM VIH specifications
・VOHM : Microcontroller VOH specifications
・IOHM :Microcontroller IOH specifications
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
3-2) DO is available in both pull up and pull down.
Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write
command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to
pull down and pull up DO. When there is no influence upon the microcontroller operations, DO may be OPEN. If DO
is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this as
a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such
output, pull up DO pin for improvement.
CS “H”
CS
SK
SK
Enlarged
D0
DI
DI
High-Z
High-Z
READY
DO BUSY
DO
BUSY
CS=SK=DI=”H”
When DO=OPEN
Improvement by DO pull up
DO
CS=SK=DI=”H”
When DO=pull up
READY
BUSY
Figure 40. READY output timing at DO=OPEN
○Pull up resistance Rpu and pull down resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
Rpu ≧
Microcontroller
VOLE ≦
EEPROM
Rpu
VILM
IOLE
VOLE
“L” input
・VOLE
・IOLE
・VILM
VILM
・・・③
・・・④
Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③,
5－0.4
Rpu ≧
-3
2.1×10
∴
“L” output
Rpu ≧
2.2 [kΩ]
With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V or
below, and with VILM(=0.8V), the equation ④ is also satisfied.
・VOLE : EEPROM VOL specifications
・IOLE : EEPROM IOL specifications
・VILM : Microcontroller VIL specifications
Figure 41. DO pull up resistance
EEPROM
Microcontroller
VIHM
VOHE
“H” input
Vcc－VOLE
IOLE
Rpd
IOHE
Rpd ≧
VOHE
IOHE
・・・⑤
VOHE ≧
VIHM
・・・⑥
Example) When VCC =5V, VOHE=Vcc－0.2V, IOHE=0.1mA,
VIHM=Vcc×0.7V from the equation ⑤
Rpd ≧
“H” output
∴
Rpd ≧
5－0.2
-3
0.1×10
48 [kΩ]
With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V or
below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
Figure 42. DO pull down resistance
・VOHE : EEPROM VOH specifications
・IOHE : EEPROM IOH specifications
・VIHM : Microcontroller VIH specifications
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
○READY / BUSY status display (DO terminal)
(common to BR93H56-WC, BR93H66-WC, BR93H76-WC, BR93H86-WC)
This display outputs the internal status signal. When CS is started after tCS (Min.200ns)
from CS fall after write command input, “H” or “L” output.
R/B display＝“L” (BUSY) = write under execution
(DO status)
After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.
And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted.
R/B display = “H” (READY) = command wait status
(DO status）
Even after tE/W (max.10ms) (Max.5ms:BR93H66RFVM-WC) from write of the memory cell, the following
command is accepted.
Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore,
DI=“L” in the area CS=“H”. (Especially, in the case of shared input port, attention is required.)
*Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted.
Therefore, status READY output is cancelled, and malfunction and mistake write may be made.
STATUS
CS
SK
CLOCK
DI
WRITE
INSTRUCTION
DO
High-Z
tSV
READY
BUSY
Figure 43. R/B status output timing chart
4) When to directly connect DI and DO
This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,
meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1
control line.
Microcontroller
EEPROM
DI/O PORT
DI
R
DO
Figure 44. DI, DO control line common connection
○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.
Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the
same time in the following points.
4-1) 1 clock cycle to take in A0 address data at read command
Dummy bit “0” is output to DO terminal.
→When address data A0 = “1” input, through current route occurs.
EEPROM CS input
“H”
EEPROM SK input
A1
EEPROM DI input
A0
Collision of DI input and DO output
EEPROM DO output
Microcontroller DI/O port
0
High-Z
A1
D15 D14 D13
A0
Microcontroller output
High-Z
Microcontroller input
Figure 45. Collision timing at read data output at DI, DO direct connection
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
4-2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, “HIGH-Z” gets in.
→Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,
READY output “H” is output from DO terminal, and through current route occurs.
Feedback input at timing of these 4-1) and 4-2) does not cause disorder in basic operations, if resistance R is inserted.
～
～
EEPROM SK input
Write command
EEPROM DI input
Write command
EEPROM DO output
Write command
～
～
Write command
～
～
EEPROM CS input
～
～
～
～
～
～
READY
～
～
～
～
BUSY
READY
High-Z
Collision of DI input and DO output
BUSY
Microcontroller output
Microcontroller input
～
～
READY
Write command
～
～
Microcontroller DI/O port
Microcontroller output
Figure 46. Collision timing at DI, DO direct connection
○Selection of resistance value R
The resistance R becomes through current limit resistance at data collision. When through current flows, noises of
power source line and instantaneous stop of power source may occur. When allowable through current is defined as I,
the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so
forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL,
even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence
upon basic operations.
4-3) Address data A0 = “1” input, dummy bit “0” output timing
(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)
・Make the through current to EEPROM 10mA or below.
・See to it that the input level VIH of EEPROM should satisfy the following.
Conditions
Microcontroller
DI/O PORT
“H” output
VOHM ≦ VIHE
EEPROM
VOHM ≦ IOHM×R + VOLE
At this moment, if VOLE=0V,
DI
VOHM ≦ IOHM×R
VOHM
IOHM
R
∴
DO
R ≧
VOHM
IOHM
・・・⑦
VOLE
・VIHE : EEPROM VIH specifications
・VOLE : EEPROM VOL specifications
・VOHM : Microcontroller VOH specifications
・IOHM : Microcontroller IOH specifications
“L” output
Figure 47. Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output)
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
4-4) DO status READY output timing
(When the microcontroller DI/O is “L”, EEPROM DO outputs “H”, and “L” is input to DI)
・Set the EEPROM input level VIL so as to satisfy the following.
Conditions
Microcontroller
“L” output
EEPROM
DI/O PORT
VOLM ≧ VILE
DI
VOLM ≧ VOHE – IOLM×R
VOLM
As this moment, if VOHE=Vcc,
VOLM ≧ Vcc – IOLM×R
R
IOHM
DO
VOHE
∴
R ≧
“H” output
・VILE
・VOHE
・VOLM
・IOLM
Vcc – VOLM
IOLM
・・・⑧
: EEPROM VIL specifications
: EEPROM VOH specifications
: Microcontroller VOL specifications
: Microcontroller IOL specifications
Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,
From the equation ⑦,
R ≧
R ≧
∴
R ≧
From the equation ⑧,
VOHM
IOHM
5
0.4×10
Vcc –
R ≧
IOLM
R ≧
-3
12.5 [kΩ]
VOLM
5 – 0.4
2.1×10-3
・・・⑨
∴
R ≧
2.2 [kΩ]
・・・⑩
Therefore, from the equations ⑨ and ⑩,
∴
R ≧
12.5 [kΩ]
Figure 48. Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output)
5) Notes at test pin wrong input
There is no influence of external input upon TEST2 pin.
For TEST1 (TEST)pin, input must be GND or OPEN. If H level is input, the following may occur,
1.
At WEN, WDS, READ command input
There is no influence by TEST1 (TEST) pin.
2. WRITE, WRAL command input
* BR93H56-WC, BR93H66-WC, address 8 bits
BR93H76-WC, BR93H86-WC, address 10 bits
Start bit
Ope code
1bits
2bits
Address*
8bits
Data
tE/W
16bits
a
Write start
CS rise timing
Figure 49.TEST1(TEST) pin wrong input timing
a：There is no influence by TEST1 (TEST) pin.
b：If H during write execution, it may not be written correctly. And H area remains BUSY and READY does not go back.
Avoid noise input, and at use, be sure to connect it to GND terminal or set it OPEN.
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
6) Notes on power ON/OFF
・At power ON/OFF, set CS “L”.
When CS is “H”, this IC gets in input accept status (active). At power ON, set CS “L” to prevent malfunction from noise.
(When CS is in “L” status, all inputs are cancelled.) At power decline low power status may prevail. Therefore, at power
OFF, set CS “L” to prevent malfunction from noise.
VCC
VCC
GND
VCC
CS
GND
Bad example
Good example
Figure 50. Timing at power ON/OFF
(Bad example) CS pin is pulled up to Vcc.
In this case, CS becomes “H” (active status), EEPROM may
malfunction or have write error due to noises. This is true even
when CS input is High-Z.
(Good example）It is “L” at power ON/OFF.
Set 10ms or higher to recharge at power OFF.
When power is turned on without observing this condition,
IC internal circuit may not be reset.
○POR citcuit
This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR operation, it gets in write
disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS
is “H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure operation,
observe the follwing conditions.
1. Set CS=”L”
2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit operation.
tR
VCC
Recommended conditions of tR, tOFF, Vbot
tR
t O FF
10m s or below
tOFF
V bot
10m s or higher 0.3V or below
100m s or below 10m s or higher 0.2V or below
Vbot
0
Figure 51. Rise waveform diagram
○LVCC circuit
LVCC (VCC-Lockout) circuit prevents data rewrite operation at low power, and prevents wrong write.
At LVCC voltage (Typ.=1.9V) or below, it prevent data rewrite.
7) Noise countermeasures
○VCC noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a by pass capacitor (0.1μF) between IC VCC and GND, At that moment, attach it as close to IC
as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND.
○SK noise
When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to
clock bit displacement.
To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about 0.3, if noises
exist at SK input, set the noise amplitude 0.3p-p or below. And it is recommended to set the rise time (tR) of SK 100ns
or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise,
fall time as small as possible.
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Cautions on Use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC.
(3) Absolute Maximum Ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded,
IC may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to IC.
(4) GND electric potential
Set the voltage of GND terminal lowest at any operating condition. Make sure that each terminal voltage is not lower than
that of GND terminal in consideration of transition status.
(5) Heat design
In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal shortcircuit and wrong packaging
When to package IC onto a board, pay sufficient attention to IC direction and displacement. Wrong packaging may
destruct IC. And in the case of shortcircuit between IC terminals and terminals and power source, terminal and GND
owing to foreign matter, IC may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Ordering Information
Product Code Description
B
R
9
3
H
x
x
x
x
x
- W
C
x
x
BUS Type
93：Microwire
Operating temperature
-40℃ to +125℃
Capacity
56=2K
76=8K
66=4K
86=16K
Package type
RF
: SOP8
RFJ
: SOP-J8
RFVM
: MSOP8
W : Double cell
C : For Automotive Application
Package specifications
E2
：Embossed tape and reel (SOP8, SOP-J8)
TR
：Embossed tape and reel (MSOP8)
●Lineup
Capacity
2K
Package
Type
SOP8
SOP-J8
SOP8
4K
SOP-J8
MSOP8
8K
16K
SOP8
SOP-J8
SOP8
SOP-J8
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Reel of 2500
Reel of 2500
Reel of 3000
Reel of 2500
Reel of 2500
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Physical Dimension Tape and Reel Information
SOP8
6
5
1 2
3
4
0.3MIN
7
4.4±0.2
6.2±0.3
8
+6°
4° −4°
0.9±0.15
5.0±0.2
(MAX 5.35 include BURR)
0.595
1.5±0.1
+0.1
0.17 -0.05
S
S
0.11
0.1
1.27
0.42±0.1
(Unit : mm)
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Physical Dimension Tape and Reel Information - Continued
SOP-J8
4.9±0.2
(MAX 5.25 include BURR)
7
6
5
1
2
3
4
0.45MIN
8
3.9±0.2
6.0±0.3
+6°
4° −4°
0.545
0.2±0.1
1.375±0.1
S
0.175
1.27
0.42±0.1
0.1 S
(Unit : mm)
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Physical Dimension Tape and Reel Information – Continued
MSOP8
4.0±0.2
2.8±0.1
8 7 6 5
0.6±0.2
+6°
4° −4°
0.29±0.15
2.9±0.1
(MAX 3.25 include BURR)
1 2 3 4
1PIN MARK
+0.05
0.145 –0.03
0.475
0.08±0.05
0.75±0.05
0.9MAX
S
+0.05
0.22 –0.04
0.08 S
0.65
(Unit : mm)
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
1pin
Direction of feed
Reel
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Marking Diagrams
SOP8(TOP VIEW)
SOP-J8(TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
MSOP8(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
●Marking Information
Capacity
2K
4K
8K
16K
Product Name
Marking
Package Type
RH56
SOP8
RH56
SOP-J8
RH66
SOP8
RH66
SOP-J8
RH66
MSOP8
RH76
SOP8
RH76
SOP-J8
RH86
SOP8
RH86
SOP-J8
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Datasheet
BR93Hxx-WC (2K 4K 8K 16K)
●Revision History
Date
Revision
31.Aug.2012
001
6.Nov.2013
002
Changes
New Release
P.1 Added AEC-Q100 Qualified
P.2 Changed Unit of Rd
P.22 Update Product Code Description.
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Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
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