BSM400D12P3G002

SiC Power Module BSM400D12P3G002 Datasheet Circuit diagram Application  Motor drive 1 7  Inverter, Converter  Photovoltaics, wind power generation. 9 8  Induction heating equipment. 3,4 6 5 Features 10 1) Low surge, low switching loss. 11 2 NTC 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D1 7 SS1 G1 8 TH1 TH2 9 10 4 11 1 3 2 6 5 G2 SS2 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/10 2019.05 - Rev.A Datasheet BSM400D12P3G002 Absolute maximum ratings (Tj = 25°C) Parameter Drain-source voltage Gate-source voltage() Gate-source voltage() VDSS VGSS Limit Conditions Symbol 1200 G-S short 22 4 D-S short 1 ID DC (Tc=60°C) VGS=18V ID DC (Tc=32°C) VGS=18V IDRM 1 Source current * 358 400 2 Pulse (Tc=60°C) 1ms VGS=18V * 800 IS DC (Tc=60°C ) VGS=18V 358 IS DC (Tc=32°C ) VGS=18V 400 IS DC (Tc=60°C ) VGS=0V 260 ISRM Pulse (Tc=60°C) 1ms VGS=18V *2 800 ISRM Pulse (Tc=60°C) 10s VGS=0V * 2 800 Total power disspation *3 Ptot Tc=25°C Max Junction Temperature Tjmax 175 Junction temperature Tjop 40 to150 Storage temperature Tstg 40 to125 Isolation voltage Visol Mounting torque  V 4 to 26 G - S Voltage (tsurge