BU30SA5WGWZ-E2

Datasheet CMOS LDO Regulators for Portable Equipments 1ch 500mA CMOS LDO Regulators BUxxSA5WGWZ series ●General Description BUxxSA5WGWZ series are high-performance CMOS LDO regulators with output current ability of up to 500-mA. These devices have excellent noise and load response characteristics despite of its low circuit current consumption of 33µA. They are most appropriate for various applications such as power supplies for logic IC, RF, and camera modules. ●Key Specifications „ Input Power Supply Voltage Range: 1.8V to 5.0V „ Output Current Range: 0mA to 500mA „ Operating Temperature Range: -40℃ to +105℃ „ Output Voltage Lineup: 3.0V,3.3V „ Output Voltage Accuracy: ±1.0% „ Circuit Current: 33µA(Typ.) „ Standby Current: 0μA (Typ.) ●Package W(Typ.) x D(Typ.) x H(Max.) UCSP30L1(BUXXSA5WGWZ) 0.8mm x 0.8mm x 0.33mm ●Features „ High Output Voltage Accuracy: ±1.0% „ High Ripple Rejection: 70 dB (Typ, 1 kHz,) „ Compatible with small ceramic capacitor (Cin=Cout=0.47 µF) „ Low Current Consumption: 33µA „ Output Voltage ON/OFF control „ Built-in Over Current Protection Circuit (OCP) „ Built-in Thermal Shutdown Circuit (TSD) „ Adopting ultra-small WLCSP UCSP30L1 ●Applications „ Portable devices „ Camera modules „ Other electronic devices using microcontrollers or logic circuits ●Typical Application Circuit Vin VOUT VIN Cin Vout Cout BUxxSD2MG-M BUxxSA5WGWZ On Off STBY GND Figure 1. Typical Application Circuit ○Product structure：Silicon monolithic integrated circuit .www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 ○This product is not designed protection against radioactive rays 1/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series ●Pin Configuration 1Pin Mark 1 2 A B Top View (Mark Side) B A 1 2 Bottom View ●Pin Description Pin No. Symbol Function A1 GND GND Pin A2 STBY Output Control Pin (High:ON, Low:OFF) B1 VOUT Output Pin B2 VIN Input Pin ●Block Diagram VIN VIN B2 VREF Cin GND A1 + OCP VOUT VOUT B1 Cout TSD VSTBY STBY A2 STBY Cin(min)=0.47µF (Ceramic) Cout(min)=0.47µF (Ceramic) Figure 2. Block diagram www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series ●Absolute Maximum Ratings Parameter Symbol Rating Unit VMAX -0.3 to +5.5 V Power Dissipation Pd 410(*1) mW Maximum Junction Temperature Tjmax +125 ℃ Operating Temperature Range Topr -40 to +105 ℃ Storage Temperature Range Tstg -55 to +125 ℃ Power Supply Voltage (*1) Derate by 4.1mW/℃ when operating above Ta=25℃.(When mounted on a board 63mm×55mm×1.6mm glass-epoxy board, 9 layer) ●Recommended Operating Ratings Parameter Symbol Limit Unit VIN 1.8 to 5.0 V Input Power Supply Voltage Range ●Recommended Operating Conditions Parameter Symbol Input capacitor Output capacitor Rating Unit Conditions － µF A ceramic capacitor is recommended. － µF A ceramic capacitor is recommended. Min. Typ. Max. Cin 0.47(*2) 1.0 Cout 0.47(*2) 1.0 (*2) Set the value of the capacitor so that it does not fall below the minimum value. Take into consideration the temperature characteristics, DC device characteristics, and degradation with time. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series ●Electrical Characteristics (*6) (Unless otherwise noted, Ta=-25℃, VIN=VOUT+1.0V , VSTBY=1.5V, Cin=1μF, Cout=1μF.) Limit PARAMETER Symbol Unit MIN. TYP. MAX. Conditions Output Voltage 1 VOUT1 VOUT ×0.99 VOUT VOUT ×1.01 V IOUT = 10μA, VOUT≧2.5V Output Voltage 2 VOUT2 VOUT -25mV VOUT VOUT +25mV V IOUT=10μA, VOUT＜2.5V Circuit Current Circuit Current (STBY) Ripple Rejection Ratio IGND ICCST RR - 33 70 80 1.0 - μA μA dB Dropout Voltage VDROP - 80 150 mV IOUT=0mA STBY=0V VRR=-20dBv,fRR=1kHz,IOUT=10mA VIN=0.98×VOUT, IOUT=100mA Ta=-40 to +85℃(*4), VOUT≧2.5V Line Regulation VDLI - 2 8 mV IOUT=10μA VIN=VOUT+0.5 to 5.0V(*5) Load Regulation1 VDLO1 - 6 45 mV IOUT=0.01 to 300mA(*6) Load Regulation2 STBY Pin Current STBY Control Voltage VDLO2 ISTBY VSTBH VSTBL 1.2 -0.2 10 - 55 4.0 VIN 0.3 mV μA V V IOUT=0.01 to 500mA(*6) ON OFF Ta=-40 to +85℃ (*3) VIN=3.5V for VOUT＜2.5V. (*4) Typical values apply for Ta=25℃. (*5) VIN=3.0V to 5.0V for VOUT＜2.5V. (*6) Operating conditions are limited by Pd. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series ●Reference data BU33SA5WGWZ (Unless otherwise specified, Ta=25℃.) 3.5 3.40 Temp=25°C VIN=STBY 3.0 Temp=25°C VIN=STBY 3.38 3.36 Output Voltage (V) Output Voltage (V) 2.5 2.0 1.5 1.0 IOUT=0uA IOUT=50mA IOUT=200mA 0.5 3.34 3.32 3.30 IOUT=0uA IOUT=50mA IOUT=200mA 3.28 3.26 3.24 3.22 0.0 3.20 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage (V) 4.5 5 0 5.5 0.5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Input Voltage (V) Figure 3. Output Voltage vs. Input Voltage Figure 4. Line Regulation 100 3.40 VIN=STBY IOUT=0uA 3.38 80 VIN=4.3V STBY=1.5V 3.36 Output Voltage (V) GND Current (uA) 1 Temp=-40°C Temp=25°C Temp=85°C 60 40 3.34 3.32 Temp=25°C 3.30 3.28 Temp=-40°C 3.26 Temp=85°C 3.24 20 3.22 3.20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5.5 100 150 200 Output Current (mA) Input Voltage (V) Figure 5. GND Current vs. Input Voltage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 50 Figure 6. Load Regulation 5/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series ●Reference data BU33SA5WGWZ (Unless otherwise specified, Ta=25℃.) 120 3.5 Temp=85°C 3.0 Output voltage (V) GND Current (µA) 100 Temp=25°C 80 60 40 Temp=-40°C 20 2.5 VIN=3.7V VIN=4.3V 2.0 VIN=5.5V 1.5 1.0 0.5 0 0 50 100 150 0.0 200 0 100 200 Output Current (mA) 400 500 600 700 800 Output Current (mA) Figure 8. OCP Threshold Figure 7. GND Current vs. Output Current 3.40 60 VIN=4.3V STBY=1.5V IOUT=0.1mA 3.38 3.36 50 3.34 GND Current (µA) Output Voltage (V) 300 3.32 3.30 3.28 3.26 3.24 40 30 VIN=4.3V STBY=1.5V IOUT=0.1ｍ A 20 10 3.22 3.20 -40 -15 10 35 60 0 -40 85 Temperature (°C) 10 35 60 85 Temperature (°C) Figure 9. Output Voltage vs. Temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 -15 Figure 10. GND Current vs. Temperature 6/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series ●Reference data BU33SA5WGWZ (Unless otherwise specified, Ta=25℃.) 100 3.5 80 GND Current (at STBY) (nA) 3.0 Output Voltage (V) 90 VIN=4.3V IOUT=0.1m A Tem p=-40°C 2.5 Tem p=25°C 2.0 Tem p=85°C 1.5 1.0 0.5 0.0 0 0.25 0.5 0.75 1 1.25 VIN=5.5V STBY=0V 70 60 50 40 30 20 10 0 -40 1.5 -15 Figure 11. STBY Threshold 60 85 Figure 12. GND Current (at STBY) vs. Temperature 1.6 200 1.4 180 VIN=0.98×VO UT STBY=1.5V 160 1.2 Dropout VOUT [V] STBY Pin Current (µA) 35 Temperature (°C) STBY Voltage (V) 1.0 0.8 0.6 Tem p=-40°C Tem p=25°C Tem p=85°C 0.4 10 Tem p=85°C 140 Tem p=25°C 120 Tem p=-40°C 100 80 60 40 0.2 20 0.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 STBY Voltage (V) 100 150 200 Output Current (mA) Figure 13. STBY Pin Current vs. STBY Voltage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 50 Figure 14. Dropout Voltage vs. Output Current 7/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series 80 80 70 70 Ripple Rejection (dB) Ripple Rejection (dB) ●Reference data BU33SA5WGWZ (Unless otherwise specified, Ta=25℃,Cin = Cout =1μF.) 60 50 40 30 Ta = 25℃ Iout = 10mA VIN_AC = -20dBV 20 10 Ta = 25℃ Iout = 10mA 60 50 40 30 20 10 0 3.3 3.8 4.3 4.8 0 100 5.3 Input Voltage (V) 1000 10000 100000 Frequency (Hz) Figure 15. Ripple Rejection vs. Input Voltage Figure 16. Ripple Rejection vs. Frequency 70 10 Output Noise Density (uV / √Hz) Output Noise (uVrms) 60 50 40 30 20 Ta = 25℃ Vin = 4.3V 10 1 0.1 0.01 0 0 50 100 150 10 200 Output Current (mA) 1000 10000 100000 Frequency (Hz) Figure 18. Output Noise Density vs. Frequency Figure 17. Output Noise vs. Output Current www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 100 8/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series ●Reference data BU33SA5WGWZ (Unless otherwise specified, Ta=25℃,Cin = Cout =1μF.) 1.0 0.0 2.0 20us/div Cout=0.47uF Cout=1uF Cout=2.2uF 1.0 0.0 Output Volatage(V) Output Volatage(V) 3.0 VOUT VOUT 2.0 1V/div VIN=4.3V 1.0 0.0 0.0 1.0 400ms/div VOUT 0.0 20us/div 3.0 Cout=0.47uF Cout=1uF Cout=2.2uF 1V/div 0.0 VIN=4.3V Output Volatage(V) Output Volatage(V) 1V/div STBY=1.5V→0V STBY Voltage(V) 1V/div 2.0 3.0 1.0 VIN=4.3V STBY Voltage(V) 1.0 2.0 1V/div Cout=0.47uF Cout=1uF Cout=2.2uF Figure 20. Startup time ( Rout = 16.5 ohm ) 2.0 VOUT VOUT 2.0 Figure 19. Startup time ( Rout = none ) STBY=1.5V→0V 1.0 0.0 20us/div 3.0 1V/div STBY=0V→1.5V STBY Voltage(V) 1V/div STBY=0V→1.5V STBY Voltage(V) 2.0 Figure 21. Discharge time ( Rout = none ) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2.0 1.0 Cout=0.47uF Cout=1uF Cout=2.2uF 1V/div 0.0 VIN=4.3V Figure 22. Discharge time ( Rout = 16.5 ohm ) 9/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series ●Reference data BU33SA5WGWZ (Unless otherwise specified, Ta=25℃,Cin = Cout =1μF.) VIN=4.3V STBY=4.3V Cout=1uF IOUT=1mA→150mA 100 100mA/div VIN=4.3V STBY=4.3V Cout=1uF 3.40 2.0us/div 3.30 3.25 VOUT 50mV/div 3.20 2.0us/div 3.35 VOUT 3.30 Figure 24. Load response ( Iout = 150mA → 1mA) STBY=3.8V→4.4V Io=10mA Cout=1uF 4.2 4.0 3.8 10us/div 3.31 3.30 10mV/div 3.29 Figure 25. Line response ( Vin= 3.8 V → 4.4 V) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4.4 200mV/div STBY=4.4V→3.8V Io=10mA Cout=1uF Output Volatage(V) 200mV/div VIN=4.4V→3.8V 4.0 3.8 10us/div 3.31 3.30 VOUT 10mV/div 3.29 Figure 26. Line response ( Vin= 4.4 V → 3.8 V) 10/16 4.2 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Input Voltage(V) 4.4 Input Voltage(V) VIN=3.8V→4.4V VOUT 50mV/div 3.25 Figure 23. Load response ( Iout = 1mA → 150mA) Output Volatage(V) 0 IOUT=150mA→1mA Output Volatage(V) Output Volatage(V) 3.35 0 200 Output Current(mA) 100 100mA/div Output Current(mA) 200 Datasheet BUxxSA5WGWZ series ●Input/Output Capacitor Capacity value of ceramic capacitor - DC bias characteristics (Example) 10-V withstand voltage B1characteristics GRM188B11A105KA61D 10 0 -10 Capacitance Change [%] It is recommended that an input capacitor is placed near pins between the VCC pin and GND as well as an output capacitor between the output pin and GND. The input is valid when the power supply impedance is high or when the PCB trace has significant length. For the output capacitor, the greater the capacitance, the more stable the output will be depending on the load and line voltage variations. However, please check the actual functionality of this capacitor by mounting it on a board for the actual application. Ceramic capacitors usually have different, thermal and equivalent series resistance characteristics, and may degrade gradually over continued use. For additional details, please check with the manufacturer, and select the best ceramic capacitor for your application 10-V withstand voltage B characteristics -20 6.3-V withstand voltage B characteristics -30 10-V withstand voltage F characteristics -40 -50 -60 4-V withstand voltage X6S characteristics 10-V withstand voltage F characteristics -70 -80 -90 -100 0 0.5 1 1.5 2 2.5 3 3.5 4 DC Bias Voltage [V] Figure 27. Capacity-bias characteristics Stable region Cin=Co=0.47uF　Ta=-40 to 85℃ Capacitors generally have ESR (equivalent series resistance) and it operates stably in the ESR-IOUT area shown on the right. Since ceramic capacitors, tantalum capacitors, electrolytic capacitors, etc. generally have different ESR, please check the ESR of the capacitor to be used and use it within the stability area range shown in the right graph for evaluation of the actual application. 100 Unstable region 10 ESR[Ω] ●Equivalent Series Resistance (ESR) of a Ceramic Capacitor 1 Stable region 0.1 0.01 0 50 100 IOUT[mA] 150 200 Figure 28. Stability area characteristics (Example) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 11/16 TSZ02201-0RBR0GZ00120-1-2 2013.05.09 Rev.001 Datasheet BUxxSA5WGWZ series ●Power Dissipation (Pd) As for power dissipation, an estimate of heat reduction characteristics and internal power consumption of IC are shown, so please use these for reference. Since power dissipation changes substantially depending on the implementation conditions (board size, board thickness, metal wiring rate, number of layers and through holes, etc.), it is recommended to measure Pd on a set board. Exceeding the power dissipation of IC may lead to deterioration of the original IC performance, such as causing the operation of the thermal shutdown circuit or reduction in current capability. Therefore, be sure to prepare sufficient margin within power dissipation for usage. Calculation of the maximum internal power consumption of IC (PMAX) Where : VIN=Input voltage VOUT= Output voltage IOMAX: Maximum output current) PMAX=(VIN-VOUT)×IOMAX ○Measurement conditions Evaluation board Layout of Board for Measurement Top Layer (Top View) Measurement State Bottom Layer (Top View) With board implemented (Wind speed 0 m/s) Board Material Glass epoxy resin (9 layers) Board Size 63 mm x 55 mm x 1.6 mm Wiring Rate Top layer Metal (GND) wiring rate: Approx. 0% Bottom layer Metal (GND) wiring rate: Approx. 50% Through Hole Diameter 0.5mm x 6 holes Power Dissipation Thermal Resistance 0.41W θja=243.9°C/W 0.5 0.41W Pd (W) 0.4 Standard ROHM board 0.3 * Please design the margin so that PMAX is less than Pd (PMAX