Standard ICs
Quad 2-input NAND Schmitt trigger
BU4093B / BU4093BF / BU4093BFV
The BU4093B, BU4093BF, and BU4093BFV are 4-circuit, 2-input NAND gates whose input pins all have a Schmitt
trigger function.
As the circuit threshold voltages are different when the input waveform rises and when it falls (VIH, VIL), they can be
used for line receivers, waveform rectification, multivibrators, and other purposes in addition to the customary usage
as a NAND gate. They may be used in place of the BU4011B which uses the same pin connection.
•1)Features
Low power dissipation.
2) Wide range of operating power supply voltages.
3) High input impedance.
4) High fan-out.
5) Direct drive of 2 L-TTL inputs and 1 LS-TTL input.
•Block diagram
A1
1
14 VDD
B1
2
13 A4
O1
3
12 B4
O2
4
11 O4
B2
5
10 O3
A2
6
9
B3
VSS
7
8
A3
•Truth table
INPUT
OUTPUT
A
B
L
L
H
L
H
H
H
L
H
H
H
L
1
Standard ICs
BU4093B / BU4093BF / BU4093BFV
•Absolute maximum ratings (V
= 0V, Ta = 25°C)
SS
Parameter
Symbol
Limits
Unit
VDD
– 0.3 ~ + 18
V
Power supply voltage
Pd
1000 (DIP), 450 (SOP), 350 (SSOP)
mW
Operating temperature
Topr
– 40 ~ + 85
°C
Storage temperature
Tstg
– 55 ~ + 150
°C
– 0.3 ~ VDD + 0.3
V
Power dissipation
VIN
Input voltage
characteristics
•DCElectrical
characteristics (unless otherwise noted, V
SS
Parameter
Input high level voltage
Symbol
VIH
Min.
Typ.
Max.
3.5
—
—
7.0
—
—
11.0
—
—
—
—
1.5
—
—
3.0
Unit
VDD (V)
Conditions
Measurement
circuit
—
Fig.1
—
Fig.1
5
V
10
15
5
Input low level voltage
VIL
—
—
4.0
Input high level current
IIH
—
—
0.3
µA
15
VIH = 15V
Fig.1
Input low level current
IIL
—
—
– 0.3
µA
15
VIL = 0V
Fig.1
4.95
—
—
9.95
—
—
V
10
IO = 0mA
Fig.1
IO = 0mA
Fig.1
Output high level voltage
Output low level voltage
Output high level current
Output low level current
Static
VOH
VOL
IOH
IOL
IDD
current dissipation
Hysteresis voltage
2
= 0V, Ta = 25°C)
VH
V
10
15
5
14.95
—
—
15
—
—
0.05
5
—
—
0.05
—
—
0.05
– 0.44
—
—
– 1.1
—
—
V
10
15
mA
5
VOH = 4.6V
10
VOH = 9.5V
– 3.0
—
—
15
VOH = 13.5V
0.44
—
—
5
VOL = 0.4V
1.1
—
—
10
VOL = 0.5V
3.0
—
—
15
VOL = 1.5V
—
—
1
5
—
—
2
—
—
4
0.17
—
0.39
0.25
—
0.60
0.33
—
0.90
mA
µA
10
VI = VDD or GND
Fig.1
Fig.1
Fig.1
15
5
V
10
15
—
Fig.3
Standard ICs
BU4093B / BU4093BF / BU4093BFV
Switching characteristics (unless otherwise noted, VSS = 0V, Ta = 25°C, CL = 50pF)
Parameter
Output rise time
Output fall time
Propagation delay
time, "L" to "H"
Propagation delay
Symbol
tTLH
tTHL
tPLH
tPHL
time, "H" to "L"
Input capacitance
CIN
Min.
Typ.
Max.
Unit.
—
100
—
—
50
—
—
40
—
15
—
100
—
5
—
50
—
—
40
—
—
125
—
—
50
—
VDD (V)
Conditions
Measurement
circuit
—
Fig.2
—
Fig.2
—
Fig.2
—
Fig.2
—
—
5
ns
10
ns
10
15
5
ns
10
—
40
—
15
—
125
—
5
—
50
—
—
40
—
—
5
—
ns
10
15
pF
•Measurement circuits
—
VDD
A
V
GND
Fig. 1 DC characteristics
VDD
20ns
20ns
90%
50%
VDD
10%
P.G.
tPLH
tPHL
CL = 50pF
50%
VIN
10%
GND
GND
tTHL
Fig. 2 Switching characteristic
VOUT
90%
tTLH
Fig. 3 Hysteresis voltage
3
Standard ICs
BU4093B / BU4093BF / BU4093BFV
•Electrical characteristic curve
POWER DISSIPATION: Pd (mW)
1200
1000
DIP14
800
600
SOP14
400
SSOP - B14
200
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE: Ta (°C)
Fig. 4 Power dissipation vs. Ta
•External dimensions (Units: mm)
BU4093B
BU4093BF
19.4 ± 0.3
3.2 ± 0.2
0.3 ± 0.1
0.5 ± 0.1 0° ~ 15°
2.54
14
8
1
7
1.27
0.15 ± 0.1
4.4 ± 0.2
6.2 ± 0.3
1.5 ± 0.1
7.62
0.11
7
0.51Min.
1
4.25 ± 0.3
8.7 ± 0.2
8
6.5 ± 0.3
14
0.4 ± 0.1
0.3Min.
0.15
DIP14
SOP14
BU4093BFV
8
1
7
0.65
0.15 ± 0.1
4.4 ± 0.2
0.1
1.15 ± 0.1
6.4 ± 0.3
5.0 ± 0.2
14
0.22 ± 0.1
0.3Min.
0.1
SSOP-B14
4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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