BU4S11

Standard ICs Single 2-input NAND gate BU4S11 The BU4S11 is a dual-input positive logic NAND gate. This is an ultra-compact logic IC with one circuit of the BU4011B built into an SMP package. •Features dissipation. 1) Low current 2) Super-mini mold package designed for surface mounting. 3) Wide range of operating power supply voltage. 4) Capable of driving two L-TTL inputs and one LS-TTL input directly •Block diagram VDD 5 Y 4 1 A 2 B 3 VSS •Absolute maximum ratings (Ta = 25°C) Parameter Power supply voltage Power dissipation Input current Operating temperature Storage temperature Input voltage Symbol VDD Pd IIN Topr Tstg VIN Limits VSS – 0.3 ~ VSS + 18 170 ± 10 – 40 ~ + 85 – 55 ~ + 150 VSS – 0.3 ~ VDD + 0.3 Unit V mW mA °C °C V Note 1: These values indicate the range limits of the voltage that can be applied to each pin without destroying it. Operation cannot be guaranteed at these values. Note 2: Power dissipation is reduced by 1.7mW for each increase in Ta of 1°C each 25°C. •Recommended operating conditions (Ta = 25°C, V Parameter Power supply voltage Input voltage Symbol VDD VIN Min. 3 0 — — SS = 0 V) Max. 16 VDD Unit V V Typ. 1 Standard ICs BS4S11 •Electrical characteristics otherwise noted, V DC characteristics (unless Parameter Symbol Min. 3.5 Input high level voltage VIH 7.0 11.0 — Input low level voltage VIL — — Input high level current Input low level current Output high level voltage IIH IIL VOH — — 4.95 9.95 14.95 — Output low level voltage VOL — — – 0.51 – 2.1 Output high level current IOH – 1.3 – 3.4 0.51 Output low level current IOL 1.3 3.4 — Static current dissipation IDD — — SS = 0V, Ta = 25°C) Max. — — — 1.5 3.0 4.0 0.3 – 0.3 — — — 0.05 0.05 0.05 — — — — — — — 0.25 0.5 1.0 Unit V V V V V V µA µA V V V V V V mA mA mA mA mA mA mA µA µA µA VDD (V) 5 10 15 5 10 15 15 15 5 10 15 5 10 15 5 5 10 15 5 10 15 5 10 15 VIN = VSS, VDD VOH = 4.6V VOH = 2.5V VOH = 9.5V VOH = 13.5V VIN = VSS VOL = 0.4V VOL = 0.5V VOL = 1.5V VIN = VDD | IOUT | < 1µA VIN = VDD Conditions VOUT = 0.5V VOUT = 1.0V VOUT = 1.5V | IOUT | < 1µA VOUT = 4.5V VOUT = 9.0V VOUT = 13.5V | IOUT | < 1µA VIH = 15V VIL = 0V | IOUT | < 1µA VIN = VSS Fig.1 Measurement circuit Typ. — — — — — — — — — — — — — — — — — — — — — — — — 2 Standard ICs Switching characteristics (unless otherwise noted, VSS = 0V, Ta = 25°C, CL = 50 pF) Parameter Symbol Min. — Output rise time tTLH — — — Output fall time tTHL — — — tPLH Propagation delay time tPHL Input capacitance CIN — — — — — — Typ. 70 35 30 70 35 30 85 40 30 85 40 30 5 Max. — — — — — — — — — — — — — Unit ns ns ns ns ns ns ns ns ns ns ns ns pF VDD (V) 5 10 15 5 10 15 5 10 15 5 10 15 5 — — — — Conditions BS4S11 Measurement circuit — Fig.2 — •Measurement circuits VDD A V VSS Fig.1 DC characteristics measurement circuit VDD 20ns 90% 50% 10% 20ns VDD VSS tPHL Input waveform tPLH P.G CL = 50pF VSS Output waveform 90% 50% 10% VOH VOL tTHL tTLH Fig.2 Switching characteristics measurement circuit 3 Standard ICs BS4S11 •External dimensions (Units: mm) 2.9 ± 0.2 (5) (4) 2.8 ± 0.3 1.6 ± 0.2 0.5 (1) (2) (3) 0.4 ± 0.1 + 0.1 0.1 – 0.05 0.95 1.1 ± 0.2 0.05 SMP5 4