BU52013HFV-TR

BU52013HFV-TR

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SOT665

  • 描述:

    全极检测霍尔IC

  • 详情介绍
  • 数据手册
  • 价格&库存
BU52013HFV-TR 数据手册
Hall ICs Unipolar Detection Hall ICs BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV No.10045ECT03 ●Description The unipolar Detection Hall IC detects only either the N pole or S pole. The output turns ON (active Low) upon detection. ●Features 1) Unipolar detection 2) Micropower operation (small current using intermittent operation method) 3) Ultra-compact CSP4 package (BU52002GUL, BU52003GUL) 4) Ultra- Small outline package (BU52012NVX) 5) Small outline package (BU52012HFV, BU52013HFV) 6) Line up of supply voltage For 1.8V Power supply voltage (BU52012NVX, BU52012HFV, BU52013HFV) For 3.0V Power supply voltage (BU52002GUL, BU52003GUL) 7) High ESD resistance 8kV(HBM) ●Applications Mobile phones, notebook computers, digital video camera, digital still camera, etc. ●Lineup matrix Function Product name S pole Supply voltage (V) Operate point (mT) Hysteresis (mT) Period (ms) Supply current (AVG.) (µA) Output type Package BU52002GUL 2.40~3.30 3.7 ※ 0.8 50 6.5 CMOS VCSP50L1 BU52012NVX 1.65~3.60 3.0 ※ 0.9 50 3.5 COMS SSON004X1216 BU52012HFV 1.65~3.30 3.0 ※ 0.9 50 3.5 CMOS HVSOF5 BU52003GUL 2.40~3.30 -3.7 ※ 0.8 50 6.5 CMOS VCSP50L1 BU52013HFV 1.65~3.30 -3.0 ※ 0.9 50 3.5 CMOS HVSOF5 N pole ※Plus is expressed on the S-pole; minus on the N-pole www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 1/19 2010.08 - Rev.C Technical Note BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV ●Absolute maximum ratings BU52002GUL,BU52003GUL (Ta=25℃) Parameter Symbol Ratings Power Supply Voltage VDD -0.1~+4.5※1 V Output Current IOUT ±1 Power Dissipation Pd Operating Temperature Range Storage Temperature Range BU52012NVX (Ta=25℃) Parameter Symbol Unit Unit Power Supply Voltage VDD -0.1~+4.5※3 V mA Output Current IOUT ±0.5 mA 420※2 mW Power Dissipation Pd 2049 Topr -40~+85 ℃ Topr -40~+85 ℃ Tstg -40~+125 ℃ Tstg -40~+125 ℃ Operating Temperature Range Storage Temperature Range ※1. Not to exceed Pd ※2. Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃ (mounted on 50mm×58mm Glass-epoxy PCB) BU52012HFV,BU52013HFV (Ta=25℃) Parameter Symbol Ratings ※4 mW ※3. Not to exceed Pd ※4. Reduced by 5.36mW for each increase in Ta of 1℃ over 25℃ (mounted on 70mm×70mm×1.6mm Glass-epoxy PCB) Unit Power Supply Voltage VDD -0.1~+4.5※5 V Output Current IOUT ±0.5 mA Power Dissipation Pd 536※6 mW Topr -40~+85 ℃ Tstg -40~+125 ℃ Operating Temperature Range Storage Temperature Range Ratings ※5. Not to exceed Pd ※6. Reduced by 5.36mW for each increase in Ta of 1℃ over 25℃ (mounted on 70mm×70mm×1.6mm Glass-epoxy PCB) ●Magnetic, Electrical characteristics BU52002GUL (Unless otherwise specified, VDD=3.0V, Ta=25℃) Limits Parameter Symbol Min. Typ. Max. Unit Conditions Power Supply Voltage VDD 2.4 3.0 3.3 V Operate Point BopS - 3.7 5.5 mT Release Point BrpS 0.8 2.9 - mT Hysteresis BhysS - 0.8 - mT TP - 50 100 ms Output High Voltage VOH VDD-0.4 - - V B
BU52013HFV-TR
物料型号: - BU52002GUL - BU52003GUL - BU52012NVX - BU52012HFV - BU52013HFV

器件简介: 这些是单极性检测霍尔集成电路,它们只能检测N极或S极中的一个。当检测到磁场时,输出变为ON(活性低)。

引脚分配: - BU52002GUL和BU52003GUL: - A1: 电源供应(VDD) - A2: 地(GND) - B1: 输出(OUT) - B2: 未连接(N.C.) - BU52012NVX: - 1: 输出(OUT) - 2: 地(GND) - 3: 未连接(N.C.) - 4: 电源供应(VDD) - BU52012HFV和BU52013HFV: - 1: 未连接(N.C.) - 2: 地(GND) - 3: 未连接(N.C.) - 4: 电源供应(VDD) - 5: 输出(OUT)

参数特性: - 电源电压范围:1.65V至3.6V(BU52012NVX, BU52012HFV, BU52013HFV)和2.40V至3.30V(BU52002GUL, BU52003GUL) - 工作点:不同型号的磁场工作点不同,范围从-3.7mT至3.7mT - 滞后性:0.8mT至0.9mT - 周期:50ms至100ms - 供电电流:平均电流从3.5uA至9uA不等

功能详解: 这些霍尔集成电路采用间歇操作方式以节省能源。在启动时,霍尔元件、放大器、比较器和其他检测电路会供电并开始磁场检测。在待机期间,检测电路将断电,从而降低电流消耗。在待机期间,检测结果会被保持并随后输出。

应用信息: 这些器件适用于移动电话、笔记本电脑、数字摄像机、数字静态相机等设备。

封装信息: - BU52002GUL和BU52003GUL:VCSP50L1封装 - BU52012NVX:SSON004X1216封装 - BU52012HFV和BU52013HFV:HVSOF5封装
BU52013HFV-TR 价格&库存

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