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BU52051NVX-TR

BU52051NVX-TR

  • 厂商:

    ROHM(罗姆)

  • 封装:

    UDFN4_EP

  • 描述:

    MAGNETIC SWITCH OMNIPOLAR 4SS0N

  • 数据手册
  • 价格&库存
BU52051NVX-TR 数据手册
Hall ICs Omnipolar Detection Hall ICs BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G, BU52051NVX,BU52053NVX,BU52054GWZ,BU52055GWZ, BU52056NVX,BU52061NVX,BD7411G No.10045EFT02 ●Description The omnipolar Hall ICs are magnetic switches that can operate both S-and N-pole, upon which the output goes from Hi to Low. In addition to regular single-output Hall ICs, We offer a lineup of dual-output units with a reverse output terminal (active High). ●Features 1) Omnipolar detection 2) Micro power operation (small current using intermittent operation method)(BD7411G is excluded.) 3) Ultra-compact and thin wafer level CSP4 package (BU52054GWZ, BU52055GWZ) 4) Ultra-compact wafer level CSP4 package (BU52015GUL, BU52001GUL) 5) Ultra-Small outline package SSON004X1216 (BU52061NVX, BU52053NVX, BU52051NVX, BU52056NVX) 6) Ultra-Small outline package HVSOF5 (BU52011HFV, BU52021HFV) 7) Small outline package (BU52025G, BD7411G) 8) Line up of supply voltage For 1.8V Power supply voltage (BU52054GWZ, BU52055GWZ, BU52015GUL, BU52061NVX, BU52053NVX, BU52051NVX, BU52056NVX, BU52011HFV) For 3.0V Power supply voltage (BU52001GUL) For 3.3V Power supply voltage (BU52021HFV, BU52025G) For 5.0V Power supply voltage (BD7411G) 9) Dual output type (BU52015GUL) 10) High ESD resistance 8kV (HBM) (6kV for BU52056NVX) ●Applications Mobile phones, notebook computers, digital video camera, digital still camera, white goods etc. ●Lineup matrix Product name Supply voltage (V) Operate point (mT) Output type Package (ms) Supply current (AVG) (A) Hysteresis Period (mT) BU52054GWZ 1.65~3.60 +/-6.3 ※ 0.9 50 5.0µ CMOS UCSP35L1 BU52055GWZ 1.65~3.60 +/-4.1 ※ 0.8 50 5.0µ CMOS UCSP35L1 BU52015GUL 1.65~3.30 +/-3.0 ※ 0.9 50 5.0µ CMOS VCSP50L1 BU52001GUL 2.40~3.30 +/-3.7 ※ 0.8 50 8.0µ CMOS VCSP50L1 BU52061NVX 1.65~3.60 +/-3.3 ※ 0.9 50 4.0µ CMOS SSON004X1216 BU52053NVX 1.65~3.60 +/-3.0 ※ 0.9 50 5.0µ CMOS SSON004X1216 BU52051NVX 1.65~3.30 +/-3.0 ※ 0.9 50 5.0µ CMOS SSON004X1216 BU52056NVX 1.65~3.60 +/-4.6 ※ 0.8 50 5.0µ CMOS SSON004X1216 BU52011HFV 1.65~3.30 +/-3.0 ※ 0.9 50 5.0µ CMOS HVSOF5 BU52021HFV 2.40~3.60 +/-3.7 ※ 0.8 50 8.0µ CMOS HVSOF5 BU52025G 2.40~3.60 +/-3.7 ※ 0.8 50 8.0µ CMOS SSOP5 BD7411G 4.50~5.50 +/-3.4 ※ 0.4 - 2.0m CMOS SSOP5 ※Plus is expressed on the S-pole; minus on the N-pole www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 1/31 2010.12 - Rev.F BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52051NVX, BU52053NVX,BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G ●Absolute maximum ratings BU52054GWZ, BU52055GWZ (Ta=25℃) Parameter Symbol Ratings Unit Power Supply Voltage VDD -0.1~+4.5※1 V Output Current IOUT ±0.5 Power Dissipation Pd Operating Temperature Range Storage Temperature Range Technical Note BU52015GUL (Ta=25℃) Parameter Symbol Ratings Unit Power Supply Voltage VDD -0.1~+4.5※3 V mA Output Current IOUT ±0.5 mA 100※2 mW Power Dissipation Pd 420※4 mW Topr -40~+85 ℃ Topr -40~+85 ℃ Tstg -40~+125 ℃ Tstg -40~+125 ℃ Operating Temperature Range Storage Temperature Range ※1. Not to exceed Pd ※2. Reduced by 1.00mW for each increase in Ta of 1℃ over 25℃ (mounted on 24mm×20mm Glass-epoxy PCB) ※3. Not to exceed Pd ※4. Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃ (mounted on 50mm×58mm Glass-epoxy PCB) BU52001GUL (Ta=25℃) BU52061NVX, BU52053NVX, BU52051NVX, BU52056NVX(Ta=25℃) Parameter Symbol Power Supply Voltage VDD Output Current IOUT Power Dissipation Operating Temperature Range Storage Temperature Range Pd Ratings Unit ※5 -0.1~+4.5 ±1 ※6 420 V mA mW Topr -40~+85 ℃ Tstg -40~+125 ℃ Symbol Power Supply Voltage VDD Output Current IOUT Power Dissipation Operating Temperature Range Storage Temperature Range ※5. Not to exceed Pd ※6. Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃ (mounted on 50mm×58mm Glass-epoxy PCB) Pd Ratings Unit ※7 -0.1~+4.5 ±0.5 ※8 2049 V mA mW Topr -40~+85 ℃ Tstg -40~+125 ℃ ※7. Not to exceed Pd ※8. Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃ (mounted on 50mm×58mm Glass-epoxy PCB) BU52011HFV (Ta=25℃) Parameter Symbol Ratings Unit Power Supply Voltage VDD -0.1~+4.5※9 V Output Current IOUT ±0.5 Power Dissipation Pd Operating Temperature Range Storage Temperature Range Parameter BU52021HFV (Ta=25℃) Parameter Symbol Ratings Unit Power Supply Voltage VDD -0.1~+4.5※11 V mA Output Current IOUT ±1 mA 536※10 mW Power Dissipation Pd 536※12 mW Topr -40~+85 ℃ Topr -40~+85 ℃ Tstg -40~+125 ℃ Tstg -40~+125 ℃ Operating Temperature Range Storage Temperature Range ※9. Not to exceed Pd ※10. Reduced by5.36mW for each increase in Ta of 1℃ over 25℃ (mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB) ※11 Not to exceed Pd ※12. Reduced by 5.36mW for each increase in Ta of 1℃ over 25℃ (mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB) BU52025G (Ta=25℃) BD7411G (Ta=25℃) Parameter Symbol Ratings Unit Parameter Symbol Ratings Unit Power Supply Voltage VDD -0.1~+4.5※13 V Power Supply Voltage VDD -0.3~+7.0※15 V Output Current IOUT ±1 mA Output Current IOUT ±1 mA Power Dissipation Pd 540※14 mW Power Dissipation Pd 540※16 mW Topr -40~+85 ℃ Topr -40~+85 ℃ Tstg -40~+125 ℃ Tstg -55~+150 ℃ Operating Temperature Range Storage Temperature Range ※13. Not to exceed Pd ※14. Reduced by 5.40mW for each increase in Ta of 1℃ over 25℃ (mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Operating Temperature Range Storage Temperature Range ※15. Not to exceed Pd ※16. Reduced by 5.40mW for each increase in Ta of 1℃ over 25℃ (mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB) 2/31 2010.12 - Rev.F BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52051NVX, BU52053NVX,BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G ●Magnetic, Electrical characteristics BU52054GWZ (Unless otherwise specified, VDD=1.80V, Ta=25℃) Limits Parameter Symbol Min. Typ. Power Supply Voltage Max. Technical Note Unit Conditions VDD 1.65 1.80 3.60 BopS - 6.3 7.9 BopN -7.9 -6.3 - BrpS 3.5 5.4 - BrpN - -5.4 -3.5 BhysS - 0.9 - BhysN - 0.9 - Tp - 50 100 ms Output High Voltage VOH VDD-0.2 - - V BrpN
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