BU52075GWZ-E2

Datasheet Omnipolar Detection Hall IC (Dual Outputs for both S and N Pole Polarity Detection) BU52075GWZ General Description Key Specifications        The BU52075GWZ is omnipolar Hall IC incorporating a polarity determination circuit that enables separate operation (output) of both the South and North poles. The polarity judgment is based on the output processing configuration. This Hall IC product can be in tablets, smart phones, and other applications in order to detect open and close of the cover. And this Hall IC product can be in digital video cameras and other applications involving display panels in order to detect the front/back location or determine the rotational direction of the panel. VDD Voltage Range: Operate Point: Hysteresis: Period: Supply Current (AVG): Output Type: Operating Temperature Range: Package 1.65V to 3.6V ±9.5mT(Typ) 0.9mT(Typ) 50ms(Typ) 5.0µA (Typ) CMOS -40°C to +85°C W(Typ) x D(Typ) x H(Max) 0.80mm x 0.80mm x 0.40mm UCSP35L1 Features  Omnipolar Detection (Polarity Detection for both S and N Poles with Separate, Dual Outputs) Micro Power Operation (Small Current Using Intermittent Operation Method) Ultra-compact CSP4 Package (UCSP35L1) Polarity Judgment and Separate Output on both Poles (OUT1=S-pole Output; OUT2=N-pole Output) High ESD Resistance 8kV(HBM)     Applications  Tablets, Smart Phones, Notebook Computers, Digital Video Cameras, Digital Still Cameras, etc. Typical Application Circuit, Block Diagram, Pin Configurations and Pin Descriptions VDD 0.1µF B1 Adjust the bypass capacitor value as necessary, according to voltage noise conditions, etc. LATCH TIMING LOGIC The CMOS output terminals enable direct connection to the PC, with no external pull-up resistor required. GND VDD LATCH × B2 OUT1 SAMPLE & HOLD ELEMENT DYNAMIC OFFSET CANCELLATION HALL A2 OUT2 A1 GND Pin No. Pin Name Function A1 GND Ground A2 OUT2 Output (React to the north pole) B1 VDD B2 OUT1 (TOP VIEW) A1 (BOTTOM VIEW) A2 A2 A1 B2 B1 Power supply B1 B2 Output (React to the south pole) 〇Product structure : Silicon monolithic integrated circuit .www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has no designed protection against radioactive rays 1/16 TSZ02201-0M2M0F414030-1-2 17.Oct.2014 Rev.001 BU52075GWZ Contents General Description ....................................................................................................................................................1 Features .......................................................................................................................................................................1 Applications ................................................................................................................................................................1 Key Specifications ......................................................................................................................................................1 Package W(Typ) x D(Typ) x H(Max) ........................................................................................................................1 Typical Application Circuit, Block Diagram, Pin Configurations and Pin Descriptions ......................................1 Absolute Maximum Ratings (Ta = 25°C) ...................................................................................................................3 Recommended Operating Conditions (Ta= -40°C to +85°C) ...................................................................................3 Magnetic, Electrical Characteristics (Unless otherwise specified VDD=1.80V Ta=25°C)......................................3 Measurement Circuit ..................................................................................................................................................4 Typical Performance Curves .....................................................................................................................................5 Figure 6. Operate Point, Release Point vs Ambient Temperature ......................................................................5 Figure 7. Operate Point, Release Point vs Supply Voltage .................................................................................5 Figure 8. Period vs Ambient Temperature ............................................................................................................5 Figure 9. Period vs Supply Voltage .......................................................................................................................5 Figure 10. Supply Current vs Ambient Temperature ...........................................................................................6 Figure 11. Supply Current vs Supply Voltage.......................................................................................................6 Description of Operations ..........................................................................................................................................7 Intermittent Operation at Power ON .......................................................................................................................10 Magnet Selection ......................................................................................................................................................10 Slide-by Position Sensing ........................................................................................................................................ 11 Position of the Hall Element (Reference) ............................................................................................................... 11 Footprint Dimensions (Optimize footprint dimensions to the board design and soldering condition) .......... 11 I/O Equivalence Circuit ............................................................................................................................................. 11 Operational Notes .....................................................................................................................................................12 Ordering Information ................................................................................................................................................14 Marking Diagrams .....................................................................................................................................................14 Physical Dimension, Tape and Reel Information ...................................................................................................15 Revision History .......................................................................................................................................................16 www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/16 TSZ02201-0M2M0F414030-1-2 17.Oct.2014 Rev.001 BU52075GWZ Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Rating Unit (Note 1) Power Supply Voltage VDD -0.1 to +4.5 V Output Current IOUT ±0.5 Power Dissipation Pd 0.10 (Note 2) W Operating Temperature Range Topr -40 to +85 °C Storage Temperature Range Tstg -40 to +125 °C mA (Note 1) Not to exceed Pd (Note 2) Mounted on 24mm x 20mm x 1.6mm glass epoxy board. Reduce 1.00mW per 1°C above 25°C Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Recommended Operating Conditions (Ta= -40°C to +85°C) Parameter Power Supply Voltage Symbol Min Typ Max Unit VDD 1.65 1.80 3.60 V Magnetic, Electrical Characteristics (Unless otherwise specified VDD=1.80V Ta=25°C) Parameter Symbol Min Typ Max BopS - 9.5 11.6 BopN -11.6 -9.5 - BrpS 6.5 8.6 - BrpN - -8.6 -6.5 BhysS - 0.9 - BhysN - 0.9 - Tp - 50 100 ms Output High Voltage VOH VDD -0.2 - - V Output Low Voltage VOL - - 0.2 V IDD(AVG) - 5 8 µA Average IDD(EN) - 2.8 - mA During startup time value IDD(DIS) - 1.8 - µA During standby time value Operate Point mT Release Point mT Hysteresis Period Supply Current Supply Current During Startup Time Supply Current During Standby Time Unit Conditions Output: OUT1 (React to the south pole) Output: OUT2 (React to the north pole) Output: OUT1 (React to the south pole) Output: OUT2 (React to the north pole) mT (Note 3) BrpN