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BU7150NUV-E2

BU7150NUV-E2

  • 厂商:

    ROHM(罗姆)

  • 封装:

    VSON10_3X3MM_EP

  • 描述:

    设计用于0.93V低电压操作的耳机放大器

  • 数据手册
  • 价格&库存
BU7150NUV-E2 数据手册
Compact Headphone Amplifiers Headphone Amplifier Designed for 0.93V Low Voltage Operation BU7150NUV No.15102EET01 ●Description BU7150NUV is Audio Amplifier designed for Single-cell battery operated audio products (VDD = 0.93 ~ 3.5V, at Ta=0~85°C). BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operations. For BU7150NUV at VDD = 1.5V, THD+N = 1%, the output power is 14mW at RL = 16Ω in single-ended mode and the output power is 85mW at RL = 8Ω in BTL mode. ●Features 1) Wide battery operation Voltage (0.93V~3.5V, Ta=0~85°C) (1.03V~3.5V, Ta= -40~85°C) 2) BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operation 3) Unity-gain stability 4) Click and pop-noise reduction circuit built-in 5) Shutdown mode(Low power mode) 6) High speed turn-on mute mode 7) Thermal shutdown protection circuit 8) Power-on reset circuit not sensed during start-up slew rate of supply voltage 9) Small package (VSON010V3030) ●Applications Noise-canceling headphone, IC recorder, Mobile phone, PDA, Electronic toys etc.. ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit Supply Voltage VDD 4.5 V Input Voltage VIN VSS-0.3~VDD+0.3 V Input Current IIN -10~10 mA Power Dissipation PD 560 * mW TSTG -55~+150 °C Storage Temperature Range *For operating over 25°C, de-rate the value at 5.6mW/°C. This value is for IC mounted on 74.2 mm x 74.2mm x 1.6mm glass-epoxy PCB of single-layer. ●Operating conditions Parameter Operation Temperature Range Supply Voltage (Note 1,2) Symbol Ratings Unit Min. Typ. Max. TOPR -40 - 85 °C VDD 0.93 - 3.5 V Note 1: If the supply voltage is 0.93V, BU7150NUV does not operate at less than 0°C. If the supply voltage is more than 1.03V, BU7150NUV operates until -40°C. (But, it is not the one which guarantees the standard value for electric characteristics.) Note 2: Ripple in power supply line should not exceed 400mVP-P.(VDD=1.5 V, Ta=25°C ) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/18 2015.1 - Rev.E Technical Note BU7150NUV ●Electrical characteristics Ta=25°C, VDD=1.5V, f=1kHz, VSS=GND unless otherwise specified. Limits Parameter Symbol Min. Typ. Max. Unit Conditions No Signal Operating Current IDD - 1 1.4 mA No load, No signal Shutdown Current ISD - 3 9 µA SDB Pin=VSS Mute Current IMUTE - 15 - µA MUTEB Pin=VSS, SE Output Offset Voltage VOFS - 5 50 mV | VOUT1 – VOUT2 |, No signal 70 85 - mW RL=8Ω, BTL, THD+N=1% - 14 - mW RL=16Ω, SE, THD+N=1% - 0.2 0.5 % 20kHz LPF, RL=8Ω, BTL, PO=25mW - 0.1 0.5 % 20kHz LPF, RL=16Ω, SE,PO=5mW VNO - 10 - µVrms CT - 85 - dB - 62 - dB - 66 - dB Maximum Output Power PO Total Harmonic Distortion +Noise Output Voltage Noise Crosstalk Power Supply Rejection Ratio THD+N PSRR 20kHz LPF + A-weight RL=16Ω, SE, 1kHz BPF Ripple voltage=200mVP-P, RL=8Ω, BTL, CBYPASS=4.7µF Ripple voltage=200mVP-P, RL=16Ω, SE, CBYPASS=4.7µF Input Logic High Level VIH 0.7 - - V MUTEB Pin, SDB Pin Input Logic Low Level VIL - - 0.3 V MUTEB Pin, SDB Pin “BTL” is BTL-mode when MODE Pin = VDD, “SE” is single-ended mode when MODE Pin = VSS. Turn-on time in BTL mode is about 11 times faster than single-ended mode. Also, BTL mode does not have MUTE mode. When MUTEB Pin = VSS, then it will be shutdown mode. ●Block diagram IN1 1 10 SDB 2 VDD 9 OUT1 Control Logic MUTEB 3 BYPASS 4 8 MODE Bias Generator 7 OUT2 6 VSS IN2 5 TOP VIEW Fig. 1 Block diagram www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/18 2015.1 - Rev.E Technical Note BU7150NUV ●Electrical characteristics waveform (Reference data) Ta=25°C, f=1kHz, VSS=GND unless otherwise specified. Using circuits are Fig.34 and Fig.35. Also, RL=16Ω for single ended mode, RL=8Ω for BTL mode) 0 0 VDD=1.5V, BTL m ode -10 -10 -20 -20 THD+N [dB] THD+N [dB] VDD=1.5V, SE m ode -30 -40 -30 -40 -50 -50 -60 -60 -70 -70 10n 100n 1u 10u 100u 1m 10m 100m Output Power [W] Fig. 2 THD+N vs . Output Power 10n 0 -20 -20 THD+N [dB] THD+N [dB] -10 -30 -40 -30 -40 -50 -60 -60 10n 100n 1u 10u 100u 1m 10m 100m 10n Output Power [W] Fig. 4 THD+N vs . Output Power 0 100n 1u 10u 100u 1m 10m 100m Output Power [W] Fig. 5 THD+N vs . Output Power 0 VDD=1.5V, Po=5m W, SE m ode, BW
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