BV1HD090FJ-CE2

Au utomotive e IPD serie es 1ch High-s side Switc S ch IC BV1HD090 B FJ-C Fe eatures           Pro oduct Summ mary AEC-Q1 100 qualified (Note 1) Built-in overcurrent lim miting circuit (OCP) Built-in thermal shutd down circuit (T TSD) Built-in open load dettection function (at output O OFF) Direct ccontrol enabled d from CMOS logic IC, etc. Built-in under voltage e lockout function Built-in Output State Pin On-Ressistance RON=9 90mΩ(Typ) (VBB=14 4V, Tj=25°C, IOUT=0.5A) Monolith hic power man nagement IC with w the contro ol block (C CMOS) and po ower MOS FE ET mounted on na single cchip Enabless operation at low voltage down to 4.2V Wide Operatin ng Input Rangge On-state Resiistance (Tj=255°C, Typ) 4.5V to 36V 90mΩ Overcurrent limit (Tj=25°C, Typ) 5.5A Active Clamp Energy (Tj=1550°C) 68mJ Pac ckage SOP-J8 W(Typ) x D(Typ) D x H(Ma ax) 44.90mm x 6.0 00mm x 1.65m mm (Note 1:G Grade1) Ge eneral Descrription BV1HD090F FJ-C is an auttomotive 1ch high h side switcch IC, which has b built-in overcurrrent limiting circuit(OCP), thermal shutdown circuit(T TSD), open lo oad detection function (OL LD) and underr voltage locko out function (UVLO). It iss also equippe ed with the dia agnostic outpu ut when detectting an error (S ST). SOP P-J8 Ap pplications  Onboard vehicle device e (engine ECU U, air condition ner, body-control etc ) Blo ock Diagram m Figure re 1. Block Dia agram 〇P Product structure e : Silicon mono olithic integrated d circuit .ww ww.rohm.com © 2016 2 ROHM Co o., Ltd. All rights reserved. TSZ Z22111 • 14 • 00 01 〇Thiss product has no designed prottection against rradioactive rays s 1/20 TSZ022201-0GBG0 0BD00150-1-2 27.Dec.2016 Rev.00 01 Datasheet BV1HD090FJ-C Pin Configurations ( Top view ) IN 1 8 VBB ST 2 7 VBB GND 3 6 VBB OUT 4 5 VBB Figure 2. Pin Configurations Pin Descriptions Pin No. Unit 1 IN 2 ST 3 GND 4 OUT 5, 6, 7, 8 VBB Function Input pin. This input has a pull-down resister. Self-diagnostic output terminal, which outputs “Low” at overcurrent or overtemperature, and “High” at open load. It has an n-channel open drain circuit structure. GND pin Output terminal, which limits the output current to protect the IC when the load is short-circuited and current exceeding the overcurrent detection value (2.7A min) flows to the output terminal. Power Supply Voltage Definition IBB IIN VDS VBB IN IOUT VIN VBB OUT IST ST VOUT GND VST GND Figure 3. Voltage/Current Definition www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C Absolute Maximum Ratings (Tj = 25°C) Parameter Symbol Rating Unit VBB-OUT Voltage VDS 45 (internal limit) V Power Supply Voltage VBB 40 V Input Voltage VIN -0.3 to +7.0 V Diagnostic Output Voltage VST -0.3 to +7.0 V Output Current IOUT 9.0(Internal limit I OC ) (Note 1) A Diagnostic Output Current IST 10 mA Junction Temperature Range Tj -40 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Maximum Junction Temperature Tjmax +150 °C Active Clamp Energy (single pulse) Tj(start)=25°C(Note 2) EAS(25°C) 242 mJ Active Clamp Energy (single pulse) Tj(start)=150°C(Note 2) (Note 3) EAS(150°C) 68 mJ (Note 1) Internally limited by the overcurrent limiting circuit. Value is a maximum. (Note 2) Maximum Active clamp energy, using single non-repetitive pulse of IAR = 1.5A and VBB = 14V. During demagnetization of inductive loads, energy must be dissipated in the BV1HD090FJ-C. This energy can be calculated with following equation: = × × [ − × ln 1 − × − + ] Following equation simplifies under the assumption of RL=0Ω. 1 = × × 2 × ( 1 − − ) (Note 3) This active clamp energy is guaranteed by design. Recommended Operating Conditions (Tj= -40°C to +150°C) Parameter Power Supply Voltage www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Symbol Min Typ Max Unit VBB 4.5 14 36 V 3/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datashe Datasheet eet BV V1HD090F FJ-C Th hermal Resis stance(Note 1) Parameter Symbol Typ U Unit Condition C 143 3.7 °C C/W 1s(Note 2) 86.9 °C C/W 2s(Note 3) 67.5 °C C/W (Note 4) 2s2p 2 SOP-J8 Between Ju unction and Su urroundings Te emperature Thermal Re esistance θJA (Note 1) The e thermal impedan nce is based on JE ESD51 - 2A (Still - Air) standard. It is used the chip of BV1HD090FJ-C C (Note 2) JES SD51 - 3 standard d FR4 114.3 mm × 76.2 mm × 1.57 mm 1-layer (1s) (Top coppe er foil: ROHM reco ommended footpri nt + wiring to mea asure, 2 oz. coppe er.) SD51 -5 standard FR4 114.3 mm × 76.2 mm × 1.60 m mm 2-layer (2s) (Note 3) JES er foil: ROHM reco ommended footpri nt + wiring to mea asure / (Top coppe Copper foiil area on the reve erse side of PCB: 74.2 mm x 74.2 mm, m 2 oz. copper (top ( & reverse sidee) ) (Note 4) JES SD51 -5 / -7 stand dard FR4 114.3 mm m × 76.2 mm × 1..60 mm 4-layer (2s s2p) (Top coppe er foil: ROHM reco ommended footpri nt + wiring to mea asure / 2 inner layyers and copper fo oil area on the reveerse side of PCB: 74.2 mm x 74.2 mm, m copper (top & reverse side / inner layers) 2ooz. / 1oz.) ■ PC CB Layout 1 Layer L (1s) Foo otprint Only Figure 4. P PCB Layout 1 Layer (1s) on Dimensio Value V B Board Finish Th hickness 1.57 mm m ± 10% Board Dime ension 76.2 mm x 114.3 mm Board Material FR4 F Copper Thickness T (Top p/Bottom Laye ers) 0.070mm m (Cu:2oz) ww ww.rohm.com © 2016 2 ROHM Co o., Ltd. All rights reserved. TSZ Z22111 • 15 • 00 01 4/20 TSZ022201-0GBG0 0BD00150-1-2 27.Dec.2016 Rev.00 01 Datashe Datasheet eet BV V1HD090F FJ-C ■ PC CB Layout 2 Layers L (2s) Top T Layer Bottom B Layer Cross Secttion Top Layer Bottom Layyer Figure 5. PC CB Layout 2 Layers L (2s) Dimensio on ■ Value V B Board Finish Th hickness 1.60 mm m ± 10% Board Dime ension 76.2 mm x 114.3 mm Board Material FR4 F Copper Thickness T (Top p/Bottom Laye ers) 0.070mm (Cu ( + Plating)) PC CB Layout 4 Layers(2s2p) L Top Layer 2nd Layer 3rd Layer Bo ottom Layer Cross Se ection Top p Layer 2n nd/3rd/Bottom m Layers Figure 6. PC CB Layout 4 Layers L (2s2p) Dimensio on Value V B Board Finish Th hickness 1.60 mm m ± 10% Board Dime ension 76.2 mm x 114.3 mm Board Material FR4 F Copper Thickness T (Top p/Bottom Laye ers) 0.070mm (Cu ( + Plating)) Coppe er Thickness (Inner Layers) 0.035mm ww ww.rohm.com © 2016 2 ROHM Co o., Ltd. All rights reserved. TSZ Z22111 • 15 • 00 01 5/20 TSZ022201-0GBG0 0BD00150-1-2 27.Dec.2016 Rev.00 01 Datashe Datasheet eet BV V1HD090F FJ-C ■ Th hermal Resista ance (Single Pulse) P Figurre 7. Thermal Resistance ww ww.rohm.com © 2016 2 ROHM Co o., Ltd. All rights reserved. TSZ Z22111 • 15 • 00 01 6/20 TSZ022201-0GBG0 0BD00150-1-2 27.Dec.2016 Rev.00 01 Datasheet BV1HD090FJ-C Electrical Characteristics (Unless otherwise specified Tj = -40 °C to +150 °C, VBB = 4.5V to 36V) Parameter Symbol Min Typ Max Unit Conditions IBBS1 - 200 330 µA VBB=14V, VIN=0V, VOUT=0V, Tj=25°C IBBS2 - 250 500 µA VBB=14V, VIN=0V, VOUT=0V, Tj=150°C VBB=14V, VIN=5V, VOUT=open Power Supply Standby Current Bias Current IBB - 3.0 6.0 mA Under Voltage Lockout Threshold VUVLO - 3.6 4.2 V Under Voltage Hysteresis Threshold VUVHYS - 0.2 - V VINH 2.8 - - V VINL - - 1.5 V VINHYS - 0.4 - V Input High-Level Input Voltage Low-Level Input Voltage Input Hysteresis High-Level Input Current IINH - 50 150 μA VIN=5V Low-Level Input Current IINL -10 - +10 μA VIN=0V RON1 - 90 120 mΩ VBB=8V to 36V, Tj=25°C RON2 - 160 215 mΩ VBB=8V to 36V, Tj=150°C RON3 - - 500 mΩ VBB=4.2V IOUTL1 - 130 200 μA VBB=14V, Tj=25°C VIN=0V, VOUT=0V, IOUTL2 - 160 250 μA VBB=14V, Tj=150°C VIN=0V, VOUT=0V, IOUTH3 -160 -90 - μA VBB=14V, Tj=25°C VIN=0V, VOUT=VBB, IOUTH4 -400 -110 - μA VBB=14V, VIN=0V, Tj=150°C VOUT=VBB, SRON 0.23 0.70 - V/μs VBB=14V, RL=10Ω, Tj=25°C Power MOS On-State Resistance Leak Current Slew Rate SROFF 0.53 1.60 - V/μs VBB=14V, RL=10Ω, Tj=25°C Propagation Delay at ON tOUTON - 30 90 μs VBB=14V, RL=10Ω, Tj=25°C Propagation Delay at OFF tOUTOFF - 20 60 μs VBB=14V, RL=10Ω, Tj=25°C VDS 45 50 56.5 V VIN=0V, IOUT=-10mA ST ON Voltage VSTL - - 0.3 V VBB=6V to 36V, VIN=0V, IST=-0.6mA ST Leak Current ISTH -10 - - μA VIN=5V, VST=5V tSTON - 11 33 μs VBB=14V, RL=10Ω, Tj=25°C tSTOFF - 30 90 μs VBB=14V, RL=10Ω, Tj=25°C Output Clamp Voltage Output States Diagnostic Output Delay Time at Input ON Diagnostic Output Delay Time at Input OFF Protection Circuit Overcurrent Detection Current Overcurrent Detection OFF Time Overcurrent Detection ON Duty Open Load Detection Resistance (Note1) Open Load Detection Voltage (Note1) (Note2) TSD Detection Temperature TSD Hysteresis(Note2) IOC 2.7 5.5 9.0 A tOCOFF - 550 1100 μs DOC - - 30 % ROLD 6 - 36 kΩ VIN=0V VOLD 1.5 - 2.5 V VIN=0V TTSD 175 190 205 °C TTSDHYS - 15 - °C (Note1) The detectable power voltage range for open load is VBB ≥ 6V. (Note2) This temperature is guaranteed by design. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 7/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C Typical Performance Curves (Unless otherwise specified VBB =14V, VIN=5V, Tj=25°C) 6.0 6.0 VBB=14V 5.0 Circuit Current : IBBS, IBB [mA] Circuit Current : IBBS, IBB [mA] 5.0 4.0 IBB 3.0 2.0 4.0 IBB 3.0 2.0 1.0 1.0 IBBS IBBS 0.0 0.0 0 10 20 30 -50 40 Power Supply Voltage : VBB [V] 150 Figure 9. Circuit Current vs. Temperature Figure 8. Circuit Current vs. Power Supply Voltage 4.0 6.0 5.0 Input Threshold Voltage : VINH VINL [V] Under Voltage Lockout Threshold : VUVLO [V] 0 50 100 Junction Temperature: Tj [°C] 4.0 3.0 2.0 1.0 3.0 VINH 2.0 VINL 1.0 0.0 0.0 -50 0 50 100 Junction Temperature : Tj [°C] -50 150 Figure 10. Under Voltage Lockout Threshold vs. Temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 0 50 100 Junction Temperature : Tj [°C] 150 Figure 11. Input Threshold Voltage vs. Temperature 8/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C Typical Performance Curves - continued 600 150 500 On-state Resistance : RON [mΩ] Input Current : IINH [μA] 120 90 60 30 400 300 200 100 0 -50 0 50 100 0 150 0 Junction Temperature : Tj [°C] 10 20 30 Power Supply Voltage : VBB [V] 40 Figure 13. On-state Resistance vs. Power Supply Voltage Figure 12. Input Current vs. Temperature 250 300 250 200 Leak Current : IOUTL [μA] On-state Resistance : RON [mΩ] VBB=14V 200 150 100 50 150 100 50 0 0 -50 0 50 100 Junction Temperature : Tj [°C] -50 150 Figure 14. On-state Resistance vs. Temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 0 50 100 Junction Temperature : Tj [°C] 150 Figure 15. Leak Current vs. Temperature 9/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C Typical Performance Curves - continued 0 3.0 Slew Rate : SRON , SROFF [V/μs] VBB=14V Leak Current : IOUTH [μA] -100 -200 -300 2.5 2.0 SROFF 1.5 1.0 SRON 0.5 -400 0.0 -50 0 50 100 -50 150 Junction Temperature : Tj [°C] Figure 16. Leak Current vs. Temperature 150 Figure 17. Slew Rate vs. Tempareture 100 60 Propagation delay at OFF : tOUTOFF [μs] Propagation delay at ON : tOUTON [μs] 0 50 100 Junction Temperature : Tj [°C] 80 60 40 20 0 50 40 30 20 10 0 -50 0 50 100 150 Junction Temperature : Tj [°C] 0 50 100 150 Junction Temperature : Tj [°C] Figure 19. Propagation Delay at OFF vs. Temperature Figure 18. Propagation Delay at ON vs. Temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 -50 10/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C Typical Performance Curves - continued 0.30 0.25 55 ST ON Voltage : VSTL [V] Output Clamp Voltage : VDS [V] 60 50 45 0.20 0.15 0.10 0.05 40 -50 0 50 100 150 0.00 -50 Junction Temperature : Tj [°C] 150 Figure 21. ST ON Voltage vs. Temperature Figure 20. Output Clamp Voltage vs. Temperature 50 9.0 VBB=14V 8.0 40 Over Current Detection : IOC [A] Diagnostic output delay time : tSTON , tSTOFF [μs] 0 50 100 Junction Temperature : Tj [°C] tSTOFF 30 20 tSTON 10 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 -50 0 50 100 150 Junction Temperature : Tj [°C] Figure 22. Diagnostic Output Delay Time vs. Temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 -50 0 50 100 Junction Temperature : Tj [°C] 150 Figure 23. Overcurrent Detection vs. Temperature 11/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C - continued 1200 35 1000 30 Open Detection Resistance : ROLD [kΩ] Over Current Detection Off Time : tOCOFF [μs] Typical Performance Curves 800 600 400 200 0 25 20 15 10 5 0 -50 0 50 100 Junction Temperature : Tj [°C] 150 0 20 30 40 Power Supply Voltage : VBB [V] Figure 24. Overcurrent Detection Off Time vs. Temperature Figure 25. Open Detection Resistance vs. Power Supply Voltage 35 10000 30 Active clamp energy : EAS [mJ] Open Detection Resistance : ROLD [kΩ] 10 25 1000 20 15 10 Tj(start)=25°C 100 Tj(start)=150°C 5 10 0 -50 0 50 100 150 1.0 2.0 Output Current : IOUT [A] Junction Temperature : Tj [°C] Figure 26. Open Detection Resistance vs. Temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 0.0 12/20 Figure 27. Active Clamp Energy vs. Output Current TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C Measurement Circuit VBB VBB V ST OUT IN IOUT VIN Figure 28. Standby Current Bias Current High-level Input Current Low-level Input Current Figure 29. Under Voltage Lockout Threshold Under Voltage Hysteresis Threshold High-Level Input Voltage Low-Level Input Voltage Input Hysteresis TSD Detection Temperature TSD Hysteresis GND Figure 30. On-state Resistance Output Clamp Voltage VBB VBB ST V OUT IN VIN Figure 32. Slew Rate Propagation Delay at ON Propagation Delay at OFF Diagnostic Output Delay Time at Input ON Diagnostic Output Delay Time at Input OF Figure 31. Leak Current VBB VBB 10k 10k ST ST Monitor 5V OUT IN VIN Figure 33. ST ON Voltage VBB VBB 5V 1k GND A V OUT GND Figure 34. Overcurrent Detection Current Overcurrent Detection OFF Time Overcurrent Detection ON Duty www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 A IN Monitor VIN GND VOUT Figure 35. Open Load Detection Resistance Open Load Detection Voltage 13/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C Measurement conditions Figure 36. Slew Rate Figure 37. Diagnostic Output Delay Time I/O Pin Truth Table Operating Status Input Signal Output Level Diagnostic Output (ST) Low Low Low High High High Low Low Low High Low Low Normal Overtemperature Overcurrent Open Load Detected Low Low Low High Switching Low Low High High High High High Error Detection Reset Condition Self-Reset Self-Reset Self-Reset Timing Chart Figure 38. Timing Chart www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 14/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C I/O Equivalent Circuits IN ST OUT ST 100Ω Resistance values shown in the diagrams above represent a typical limit, respectively Figure 39. I/O Equivalent Circuits Application Circuits 5V CVBB RSTPU VBB ST BV1HD090 OUT MCU RL IN GND RGND DGND Figure 40. Application Circuits Symbol Value Purpose R STPU 10kΩ ST terminal is open drain output. ST terminal is pulled up by MCU power supply. R GND 1kΩ Current limitation during reverse battery. C VBB 100nF D GND - www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Filter of the voltage spikes on the VBB line. Protection of the BV1HD090FJ-C during reverse battery. 15/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C Precautions for use 1. Ground Wiring Pattern When both small signal ground and large current ground are provided, it is recommended to isolate the large current ground pattern from the small signal ground pattern and ground at one point at the reference point of the set PCB so as to prevent change of the small signal ground voltage caused by the pattern wiring resistance and large current. Also, pay attention not to change the voltage of ground wiring pattern of the external parts. When wiring the ground line, be sure to set it to low impedance. 2. Thermal Design The generated calorific value Pc is determined by Pc ≒ V DS ×IOUT+VBB×IBB, using VBB - OUT potential difference (V DS ), amperage flowing through load (IOUT) and operating current (IBB). In consideration of the thermal resistance value in the actual service condition, complete the thermal design having sufficient margins. Should the project be used in the condition exceeding Tjmax = 150 °C, the essential IC properties may be deteriorated. Since the thermal resistance value described in this specification is measured in the PCB conditions and environments recommended by JEDEC, you should remember that the value in the actual service environments may differ from that. 3. Absolute Maximum Rating If the temperature value exceeds the absolute maximum rating due to overvoltage applied or rise in temperature, the IC may be broken. If a special mode is assumed where a short circuit between terminals or an excess of the absolute maximum rating may occur, it is recommended to take physical safety measures such as fuses. 4. Inspection Using a Set PCB In the assembly process, apply grounding as a measure against IC damage caused by static electricity and pay special attention during transportation and storage. When connecting the IC to or removing the IC from the mount board in the inspection process, be sure to turn OFF the power supply. If a terminal to which a capacitor is connected is included, residual charge may apply stress to the IC. To avoid this, be sure to discharge electricity before performing the following inspection. 5. Mis-mounting and Short Circuit Between Terminals When mounting the IC on the PCB, pay special attention to the IC direction, displacement and short circuit between terminals. Mis-mounting or short circuit between terminals may cause IC damage. 6. Ceramic Capacitor Characteristic Variation When using a ceramic capacitor as the external component, determine the constant in consideration of lowering of nominal capacity due to direct current bias and change of capacity caused by thermal conditions. 7. Thermal Shut Down Function The IC integrates the thermal shut down function. When the IC chip temperature exceeds 190°C (Typ), the function turns OFF the output and sets the diagnostic output (ST) to Low. When the temperature becomes lower than 175°C (Typ), the IC returns to the normal operation. The thermal shut down function is provided only in order to shut down a thermal runaway, not in order to protect or secure the IC. Since the thermal shut down function turns ON in the state exceeding the absolute maximum rating, be sure to avoid designing a set PCB pre-requiring use of this function. 8. Overcurrent Protection Function The IC integrates the overcurrent protection function. When overcurrent flows, the function limits the output current to 5.5A (Typ), turns OFF the output if the limited state continues for 3μs (Typ) or longer and sets the diagnostic output (ST) to Low. If the output OFF state continues for 550μs (Typ), the IC resets itself. During the erroneous state where overcurrent flows, the function turns ON/OFF the output repeatedly. The overcurrent protection function is to protect the IC from damage caused only by a sudden abnormality such as a load short circuit and short circuit between terminals. Be sure to avoid designing a set PCB pre-requiring use of this function. 9. Active Clamp Operation The IC integrates the active clamp circuit to internally absorb the counter electromotive force generated when the inductive load is turned OFF. When the active clamp operates, VBB - OUT voltage becomes 50V (Typ) and the IC chip temperature rises. However, since this is the operation at IN=0V, the thermal shut down function does not turn ON. To drive the inductive load, refer to Figure. 27 to determine the load which will be below the active clamp tolerance dose. 10. Power Supply Line Since the power supply line where large current flows may influence the normal operation, design the power supply line so that the power supply pattern wiring resistance will become smaller. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 16/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C 11. Reverse Connection of Power Connector (VBB - GND) A reverse connection of the power connector (between VBB and GND) incurs a risk to break the IC. In order to prevent the IC from damage at reverse connection, take an appropriate measure, for example, to insert a diode and resistor between the GND terminal of the PCB ground and that of the IC, or to insert a diode between VBB of the power supply and that of the IC. (Refer to Figure No.40) 12. Power Terminal in The Open State When the power terminal (VBB) becomes open at ON (IN=High), the output is switched to OFF irrespective of input voltage. If an inductive load is connected, the active clamp operates when VBB is open, and then becomes the same potential as that on the ground and the output voltage drops down to - 50V (Typ). 13. GND Terminal in The Open State When the GND terminal becomes open at ON (IN=High), the output is switched to OFF irrespective of input voltage. If an inductive load is connected, the active clamp operates when the GND terminal is open. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 17/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datasheet BV1HD090FJ-C Ordering Information B V 1 H D 0 9 Part Number 0 F J Package FJ:SOP-J8 - CE2 Packaging and forming specification C : Automotive product E2 : Embossed tape and reel Marking Diagrams SOP-J8(TOP VIEW) Part Number Marking LOT Number 1PIN MARK Part Number Marking 1HD90 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Package SOP-J8 Orderable Part Number BV1HD090FJ-CE2 18/20 TSZ02201-0GBG0BD00150-1-2 27.Dec.2016 Rev.001 Datashe Datasheet eet BV V1HD090F FJ-C Ph hysical Dime ension, Tape e and Reel Information Package P Na ame SO OP-J8