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BV1LF080EFJ-CE2

BV1LF080EFJ-CE2

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SOIC8_150MIL_EP

  • 描述:

    电源开关/驱动器 1:1 N 通道 7.5A 8-HTSOP-J

  • 数据手册
  • 价格&库存
BV1LF080EFJ-CE2 数据手册
Datasheet Automotive IPD 1ch Low-Side Switch with Slew Rate Control and Output Diagnostic Function BV1LF080EFJ-C Features           Key Specifications AEC-Q100 Qualified (Note 1) Built-in Dual TSD (Note 2) Built-in Over Current Protection Function (OCP) Built-in Thermal Shutdown Function (TSD) Built-in Active Clamp Function Built-in Diagnostic Function Built-in Slew Rate Control Function Directly Controllable from CMOS logic ICs On-Resistance RDS(ON) = 80mΩ (Typ) (VDD = 5 V, IOUT = 1.0 A, Tj = 25 °C) Monolithic Power Management IC with Control Unit (CMOS) and Power MOSFET on a Single Chip On-state Resistance (Tj = 25 °C, Typ) Over Current Limitation Level (Tj = 25 °C, Typ) Output Clamp Voltage (Min) Active Clamp Energy (Tj(START) = 25 °C) Package HTSOP-J8 80 mΩ 7.5 A 42 V 200 mJ W (Typ) x D (Typ) x H (Max) 4.9 mm x 6.0 mm x 1.0 mm (Note 1) Grade 1 (Note 2) This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS steep temperature rising detect). General Description BV1LF080EFJ-C is a 1ch low-side switch for automotive application. Output slew rate are variably controlled by external resistance of the SR terminal. It has built-in OCP, Dual TSD and Active Clamp function. It is equipped with output diagnostic function for TSD Application  Driving Resistive, Inductive and Capacitive Loads Block Diagram VDD STBY Supply Unit OUT Active Clamp IN SR GATE Control Dual TSD ST ST Contorol OCP GND 〇Product structure : Silicon integrated circuit www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has no designed protection against radioactive rays. 1/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Contents Features ......................................................................................................................................................................................... 1 General Description ...................................................................................................................................................................... 1 Key Specifications ........................................................................................................................................................................ 1 Package ......................................................................................................................................................................................... 1 Application..................................................................................................................................................................................... 1 Block Diagram .............................................................................................................................................................................. 1 Contents ........................................................................................................................................................................................ 2 Pin Configuration .......................................................................................................................................................................... 3 Pin Description .............................................................................................................................................................................. 3 Definition ....................................................................................................................................................................................... 3 Absolute Maximum Ratings ........................................................................................................................................................ 4 Recommended Operating Condition .......................................................................................................................................... 4 Thermal Resistance...................................................................................................................................................................... 5 Electrical Characteristics ............................................................................................................................................................. 9 Typical Performance Curves ..................................................................................................................................................... 12 Measurement Circuit .................................................................................................................................................................. 19 Truth Table .................................................................................................................................................................................. 21 Timing Chart ............................................................................................................................................................................... 21 Function Description .................................................................................................................................................................. 23 I/O Equivalent Circuit ................................................................................................................................................................ 26 Operational Notes ...................................................................................................................................................................... 27 Ordering Information ................................................................................................................................................................. 31 Marking Diagram ........................................................................................................................................................................ 31 Physical Dimension and Packing Information......................................................................................................................... 32 Revision History .......................................................................................................................................................................... 33 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Pin Configuration HTSOP-J8 (TOP VIEW) VDD 1 8 GND STBY 2 7 GND IN 3 6 GND 5 SR OUT EXP-PAD ST 4 Pin Description Pin No. Pin Name Function 1 VDD Power supply pin. 2 STBY Input pin. Pull-down resistor is internally connected 3 IN Input pin. Pull-down resistor is internally connected 4 ST Self-diagnostic output pin. 5 SR Slew rate control pin 6 GND Ground pin. 7 GND Ground pin. 8 GND Ground pin. EXP-PAD OUT Output pin. When output pin is shorted to power supply and the output current is limited to protect IC. Definition VBAT VDD VBAT IDD RST VDD RL, ZL VDD VSTBY VIN STBY VSTBY OUT IOUT IN VIN ST IST VST VOUT SR GND RSR VSR GND www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 3/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Absolute Maximum Ratings (Tj = 25 °C) Parameters Symbol Rating Unit VDD -0.3 to +7 V VOUT -0.3 to +42 V VSR -0.3 to VDD + 0.3 V VIN -0.3 to +7 V VSTBY -0.3 to +7 V Output Current IOUT 5 (internal limit) Diagnostic Output Voltage VST -0.3 to +7 V Diagnostic Output Current IST 10 mA Active Clamp Energy (Single Pulse) Tj(START) = 25 °C (Note 2) EAS(25 °C) 200 Active Clamp Energy (Single Pulse) Tj(START) = 150 °C (Note 2) (Note 3) EAS(150 °C) 80 Tj -40 to +150 °C Tstg -55 to +150 °C Tjmax 150 °C Power Supply Voltage Output Voltage Input Voltage Operating Temperature Range Storage Temperature Range Maximum Junction Temperature (Note 1) A mJ Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating. (Note 1) Internally limited by over current protection function. (Note 2) Active clamp energy (Single Pulse), at the condition IOUT(START) = 1.0 A, VBAT = 16 V. 𝐸𝐴𝑆 = 1 𝑉𝐵𝐴𝑇 𝐿𝐼𝑂𝑈𝑇(𝑆𝑇𝐴𝑅𝑇) 2 × (1 − ) 2 𝑉𝐵𝐴𝑇 − 𝑉𝑂𝑈𝑇(𝐶𝐿) (Note 3) Not 100 % tested. Recommended Operating Condition Parameters Power Supply Voltage Operating Temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Symbol Min Typ Max Unit VDD 3.5 5.0 6.5 V Tj -40 +25 +150 °C 4/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Thermal Resistance (Note 1) Parameter Symbol Typ Unit Condition 126.5 °C/W 1s (Note 2) 37.8 °C/W 2s (Note 3) 25.3 °C/W 2s2p (Note 4) BV1LF080EFJ-C Between Junction and Surroundings Temperature Thermal Resistance θJA (Note 1) The thermal impedance is based on JESD51-2A (Still-Air) standard. It is used the chip of BV1LF080EFJ-C (Note 2) JESD51-3 standard FR4 114.3 mm x 76.2 mm x 1.57 mm 1-layer (1s) (Top copper foil: ROHM recommended Footprint + wiring to measure, 2 oz. copper.) (Note 3) JESD51-5 standard FR4 114.3 mm x 76.2 mm x 1.60 mm 2-layers (2s) (Top copper foil: ROHM recommended Footprint + wiring to measure/ Copper foil area on the reverse side of PCB: 74.2 mm x 74.2 mm, copper (top & reverse side) 2 oz.) (Note 4) JESD51-5/- 7 standard FR4 114.3 mm x 76.2 mm x 1.60 mm 4-layers (2s2p) (Top copper foil: ROHM recommended Footprint + wiring to measure/ 2 inner layers and copper foil area on the reverse side of PCB: 74.2 mm x 74.2 mm, copper (top & reverse side/inner layers) 2 oz./1 oz.)  PCB Layout 1 Layer (1s) Footprint 100 mm 2 600 mm 2 1200 mm 2 Dimension Value Board Finish Thickness 1.57 mm ± 10 % Board Dimension 76.2 mm x 114.3 mm Board Material FR4 Copper Thickness (Top Layer) 0.070 mm (Cu:2 oz) Copper Foil Area Dimension Footprint / 100 mm 2 / 600 mm 2 / 1200 mm 2 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 5/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Thermal Resistance - continued  PCB Layout 2 Layers (2s) Bottom Layer Top Layer Top Layer Bottom Layer via Isolation Clearance Diameter : ≥ 0.6 mm Cross Section Dimension Value Board Finish Thickness 1.60 mm ± 10 % Board Dimension 76.2 mm x 114.3 mm Board Material FR4 Copper Thickness (Top/Bottom Layers) 0.070 mm (Cu +Plating) Thermal Vias Separation/Diameter 1.2 mm / 0.3 mm www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 6/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Thermal Resistance - continued  PCB Layout 4 Layers (2s2p) 2nd / Bottom Layers Top Layer 3rd Layer Top Layer 2nd Layer 3rd Layer Bottom Layer via Isolation Clearance Diameter : ≥ 0.6 mm Cross Section Dimension Value Board Finish Thickness 1.60 mm ± 10 % Board Dimension 76.2 mm x 114.3 mm Board Material FR4 Copper Thickness (Top/Bottom Layers) 0.070 mm (Cu +Plating) Thermal Vias Separation/Diameter 1.2 mm / 0.3 mm www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 7/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Thermal Resistance - continued  Transient Thermal Resistance (Single Pulse)  Thermal Resistance (θJA vs. Copper Foil Area – (1s)) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 8/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Electrical Characteristics (Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VDD = 5 V) Parameters Symbol Limit Unit Condition Min Typ Max IVDD(S) - 0 10 μA IVDD - 200 500 μA VUVLOR - 2.5 3.0 V VUVLOHYS - 0.2 0.4 V High Level Input Voltage VSTBY(H) 3.0 - - V Low Level Input Voltage VSTBY(L) - - 1.5 V Input hysteresis Voltage VSTBY(HYS) - 0.2 - V High Level Input Current ISTBY(H) - 50 150 μA VSTBY = 5 V Low Level Input Current ISTBY(L) -1 0 +1 μA VSTBY = 0 V High Level Input Voltage VINH 3.0 - - V Low Level Input Voltage VINL - - 1.5 V Input hysteresis Voltage VINHYS - 0.2 - V High Level Input Current IINH - 50 150 μA VIN = 5 V Low Level Input Current IINL -1 0 +1 μA VIN = 0 V Power Supply Standby Current Operating Current Under Voltage Release Voltage Under Voltage Hysteresis Voltage VDD = RSR = VDD = RSR = 5 V, VSTBY = VIN = 0 V 68 kΩ VSTBY = VIN = 5 V 68 kΩ VDD Sweep up Input (STBY) Input (IN) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 9/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Electrical Characteristics – Continued (Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VDD = 5 V) Parameters Symbol Limit Unit Min Typ Max - 80 104 mΩ - 150 180 mΩ - 0.0 0.5 μA - 1 20 μA Condition Power MOS Output On-state Resistance Leak Current RDS(ON) IOUT(L) Output Clamp Voltage VOUT(CL) 42 48 52 V Turn-ON Delay Time 1 tONDLY1 - 38 60 μs Turn-OFF Delay Time 1 tOFFDLY1 - 95 145 μs Fall Time 1 tF1 28 40 52 μs Rise Time 1 tR1 28 40 52 μs Slew Rate ON 1 SRON1 0.138 0.180 0.257 V/μs Slew Rate OFF 1 SROFF1 0.138 0.180 0.257 V/μs Turn-ON Delay Time 2 tONDLY2 - 105 155 μs Turn-OFF Delay Time 2 tOFFDLY2 - 266 410 μs Fall Time 2 tF2 78 113 147 μs Rise Time 2 tR2 78 113 147 μs Slew Rate ON 2 SRON2 0.049 0.064 0.092 V/μs Slew Rate OFF 2 SROFF2 0.049 0.064 0.092 V/μs Turn-ON Delay Time 3 tONDLY3 - 230 335 μs Turn-OFF Delay Time 3 tOFFDLY3 - 585 904 μs Fall Time 3 tF3 174 249 324 μs Rise Time 3 tR3 174 249 324 μs Slew Rate ON 3 SRON3 0.022 0.029 0.041 V/μs Slew Rate OFF 3 SROFF3 0.022 0.029 0.041 V/μs www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 10/33 VDD = 5 V, IOUT = Tj = 25 °C VDD = 5 V, IOUT = Tj = 150 °C VSTBY = 0 V, VOUT Tj = 25 °C VSTBY = 0 V, VOUT Tj = 150 °C 1.0 A, 1.0 A, = 18 V, = 18 V, VIN = 0 V, IOUT = 1 mA VDD = 5 V, RL = 10 Ω, RSR = 24 kΩ VBAT = 12 V VDD = 5 V, RL = 10 Ω, RSR = 68 kΩ VBAT = 12 V VDD = 5 V, RL = 10 Ω, RSR = 150 kΩ VBAT = 12 V TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Electrical Characteristics – Continued (Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VDD = 5 V) Parameters Symbol Limit Unit Condition Min Typ Max VSR 0.95 1.00 1.05 V VDD = VSTBY = 5 V, RSR = 68 kΩ VST(L) - - 0.5 V IST = 1 mA IST(L) - - 1 μA tSTDET - - 65 µs tSTREL - - 10 µs IOUT(LIM) 5.0 7.5 10.0 A TTSDD 150 175 - °C TTSDR 135 160 - °C TTSDHYS - 15 - °C TDTJD - 93 - °C TDTJR - 43 - °C TDTJHYS - 50 - °C SR Pin SR Output Voltage Diagnostic Output ST Low Voltage (Note 1) ST Leak Current ST Detection Delay Time ST Release Delay Time (Note 1) (Note 1) VST = 5 V Protection Function Over Current Limitation Level Thermal Shutdown Detected Temperature (Note 1) Thermal Shutdown Released Temperature (Note 1) Thermal Shutdown Hysteresis Temperature (Note 1) ΔTj Protection Detected Temperature (Note 1) ΔTj Protection Released Temperature (Note 1) ΔTj Protection Hysteresis Temperature (Note 1) Tj = 25 °C (Note 1): Not 100 % tested. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 11/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C 500 500 450 450 400 400 VDD Input Current: I VDD [μA] VDD Input Current1: IVDD [μA] Typical Performance Curves (Unless otherwise specified, Tj = 25 °C, VDD = 5 V) 350 300 250 200 350 300 250 200 150 150 100 100 3.0 4.0 5.0 6.0 -40 7.0 40 80 120 150 Tj [°C] Junction Temperature: Tj[℃] VDD Voltage: VVDD [V] Figure 1. Operating Current vs VDD Input Voltage Figure 2. Operating Current vs Junction Temperature 3.0 3.0 2.9 2.8 2.7 VUVLO(R) 2.9 VUVLO(D) 2.8 High Level Input Voltage / Low Level Input Voltage (STBY): VSTBY [V] Under Voltage Detection (Release) Voltage: VUVLO[V] 0 2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 VSTBY(H) VSTBY(L) 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.6 1.5 1.5 -40 0 40 80 120 150 Tj [°C] Junction Temperature: Tj[℃] -40 0 40 80 120 150 [°C] Junction Temperature: Tj Tj[℃] Figure 3. Under Voltage Detection (Release) Voltage Figure 4. High Level Input Voltage / Low Level Input vs Junction Temperature Voltage (STBY) vs Junction Temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 12/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Typical Performance Curves - Continued (Unless otherwise specified, Tj = 25 °C, VDD = 5 V) 3.0 150 High Level Input Voltage / Low Level Input Voltage (IN): VIN[V] 2.8 VIN(H) 140 VIN(L) 130 High Level Input Current / Low Level Input Current (STBY): I STBY[μA] 2.9 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 ISTBY(H) ISTBY(L) 120 110 100 90 80 70 60 50 40 30 20 10 1.6 0 1.5 -40 0 40 80 120 -40 150 0 40 80 120 150 Junction Temperature: Tj[℃] Tj [°C] Tj [°C] Junction Temperature: Tj[℃] Figure 5. High Level Input Voltage / Low Level Input Figure 6. High Level Input Current / Low Level Input Voltage (IN) vs Junction Temperature Current (STBY) vs Junction Temperature 200 150 180 IIN(H) 130 IIN(L) 120 On-state Resistance: RDS(ON) [mΩ] High Level Input Current / Low Level Input Current (IN): IIN[μA] 140 110 100 90 80 70 60 50 40 30 20 160 140 120 100 80 60 40 20 10 0 -40 0 40 80 120 150 Junction Temperature: Tj[℃] Tj [°C] 0 3 4 5 6 7 VDD Input Voltage: VVDD [V] Figure 7. High Level Input Current / Low Level Input Figure 8. On-state Resistance vs Input Voltage Current (IN) vs Junction Temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 13/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Typical Performance Curves - Continued (Unless otherwise specified, Tj = 25 °C, VDD = 5 V) 0.5 180 VDD = 3.5 V 160 VDD = 5 V 0.4 Leak Current: I OUT(L) [μA] On-state Resistance: RDS(ON) [mΩ] 200 140 120 100 80 60 40 0.3 0.2 0.1 20 0 -40 0 40 80 120 0.0 150 0 2 4 [°C] Junction Temperature: Tj Tj[℃] 20 52 18 51 16 50 14 12 10 8 6 4 14 16 18 47 46 45 44 0 42 80 12 48 43 40 10 49 2 0 8 Figure 10. Leak Current vs OUT Voltage Output Clamp Voltage: VOUT(CL) [V] Leak Current : IOUT(L) [μA] Figure 9. On-state Resistance vs Junction Temperature -40 6 Out Voltage: VOUT [V] 120 150 -40 0 40 80 120 150 Junction Temperature: Tj[℃] Tj [°C] Tj [°C] Junction Temperature: Tj[℃] Figure 11. Leak Current vs Junction Temperature Figure 12. Output Clamp Voltage vs Junction Temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 14/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C 160 160 140 140 Turn-ON Delay TIME2: t ONDLY2 [μs] Turn-ON Delay TIME2: t ONDLY2 [μs] Typical Performance Curves - Continued (Unless otherwise specified, Tj = 25 °C, VDD = 5 V) 120 100 80 60 40 120 100 80 60 40 3 4 5 6 7 -40 0 40 80 120 Tj [°C] Junction Temperature: Tj[℃] VDD Input Voltage: VVDD [V] Figure 13. Turn-ON Delay Time2 vs VDD Input Voltage Figure 14. Turn-ON Delay Time2 vs Junction (RSR = 68 kΩ) Temperature (RSR = 68 kΩ) 400 400 350 350 Turn-OFF Delay TIME2: t OFDLY2 [μs] Turn-OFF Delay TIME2: t OFFDLY2 [μs] 150 300 250 200 150 100 300 250 200 150 100 50 50 0 0 3 4 5 6 7 -40 0 40 80 120 VDD Input Voltage: VVDD [V] Figure 15. Turn-OFF Delay Time2 vs VDD Input Figure 16. Turn-OFF Delay Time2 vs Junction Voltage (RSR = 68 kΩ) Temperature (RSR = 68 kΩ) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 150 Junction Temperature: Tj[℃] Tj [°C] 15/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C 150 150 140 140 130 130 Fall Time2: t F2 [μs] Fall Time2: t F2 [μs] Typical Performance Curves - Continued (Unless otherwise specified, Tj = 25 °C, VDD = 5 V) 120 120 110 110 100 100 90 90 80 80 70 70 3 4 5 6 -40 7 0 40 80 120 150 Tj [°C] Junction Temperature: Tj[℃] VDD Input Voltage: VVDD [V] Figure 18. Output Fall Time2 vs Junction Temperature (RSR = 68 kΩ) (RSR = 68 kΩ) 150 150 140 140 130 130 Rise Time2: t R2 [μs] Rise Time2: t R2 [μs] Figure 17. Output Fall Time2 vs VDD Input Voltage 120 120 110 110 100 100 90 90 80 80 70 70 3 4 5 6 7 -40 0 40 80 120 150 Tj [°C] Junction Temperature: Tj[℃] VDD Input Voltage: VVDD [V] Figure 19. Rise Time2 vs VDD Input Voltage Figure 20. Rise Time2 vs Junction Temperature (RSR = 68 kΩ) (RSR = 68 kΩ) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 16/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C 0.10 0.10 0.09 0.09 Slew Rate ON2: SRON2 [V/μs] Slew Rate ON2: SRON2 [V/μs] Typical Performance Curves - Continued (Unless otherwise specified, Tj = 25 °C, VDD = 5 V) 0.08 0.07 0.06 0.05 0.08 0.07 0.06 0.05 0.04 0.04 3 4 5 6 -40 7 0 VDD Input Voltage: VVDD [V] 80 120 150 Figure 21. Slew Rate ON2 vs VDD Input Voltage Figure 22. Slew Rate ON2 vs Junction Temperature (RSR = 68 kΩ) (RSR = 68 kΩ) 0.10 0.10 0.09 0.09 Slew Rate OFF2: SROFF2 [V/μs] Slew Rate OFF2: SROFF2 [V/μs] 40 Tj [°C] Junction Temperature: Tj[℃] 0.08 0.07 0.06 0.05 0.08 0.07 0.06 0.05 0.04 0.04 3 4 5 6 7 -40 0 40 80 120 150 Junction Temperature: Tj[℃] Tj [°C] VDD Input Voltage: VVDD [V] Figure 23. Slew Rate OFF2 vs VDD Input Voltage Figure 24. Slew Rate OFF2 vs Junction Temperature (RSR = 68 kΩ) (RSR = 68 kΩ) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 17/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Typical Performance Curves - Continued (Unless otherwise specified, Tj = 25 °C, VDD = 5 V) 10000 Active Clamp Energy (Single Pulse): EAS[mJ] Over Current Limit Value: IOUT(LIM) [A] 10 9 Tj(START) = 25 ℃ Tj(START) = 150 ℃ 1000 8 7 6 5 -40 0 40 80 120 100 10 150 Tj [°C] Junction Temperature: Tj[℃] 0.5 1.0 1.5 2.0 2.5 Figure 25. Over Current Limit Value Figure 26. Active Clamp Energy (Single Pulse) vs Junction Temperature vs Output Current (Start) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 3.0 Output Current (Start): I OUT(START)[A] 18/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Measurement Circuit V DD V DD VDD IN VDD R L = 10 Ω OUT VIN = 5V ST Measurement Circuit for Figure 3 VDD = 5V OUT VDD R L = 10 Ω IN V BAT = 12 V SR ST VBAT = 12 V SR GND Measurement Circuit for Figure 5 VDD =5V OUT VDD R L = 10 Ω IN V BAT = 12 V VIN = 0V or 5 V STBY SR ST GND VDD IN R SR= 68 kΩ RL = 10 Ω STBY Measurement Circuit for Figure 4 V STBY = 0V or 5 V OUT V IN STBY V DD = 5V ST GND VDD IN RSR = 68 kΩ VBAT = 12 V SR GND Measurement Circuit for Figure 1 and Figure 2 V STBY R L = 10 Ω STBY SR V DD = 5V OUT VIN = 5V STBY R SR= 68 kΩ IN V BAT = 12 V ST R SR = 68k Ω GND Measurement Circuit for Figure 6 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 OUT RL = 10 Ω VBAT = 12 V STBY SR ST GND Measurement Circuit for Figure 7 19/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Measurement Circuit – Continued VDD VDD = 5V VDD IN VDD IN OUT OUT VOUT = 18 V I OUT = 1.0 A R DS(ON) = VOUT/I OUT STBY SR STBY SR ST ST GND GND Measurement Circuit for Figure 8 and Figure 9 Measurement Circuit for Figure 10 and Figure 11 V IN = 0 V to 5 V or 5 V to 0 V VDD = 5 V VDD = 5V VDD IN VDD OUT IN I OUT = 1 mA OUT Monitor STBY RL = 10 Ω Monitor VBAT = 12 V STBY SR ST GND RSR Measurement Circuit for Figure 12 SR ST GND Measurement Circuit for Figure 13, Figure 14, Figure 15, Figure 16, Figure 17, Figure 18, Figure 19, Figure 20, Figure 21, Figure 22, Figure 23 and Figure 24 VDD = 5V VDD IN OUT VOUT = 12 V STBY SR ST GND Measurement Circuit for Figure 25 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 20/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Truth Table  OUT Output and Diagnostic Output Function Performs diagnostic test to check for any abnormal conditions and output to the ST pin. Once Thermal Shutdown is detected, the ST pin is latched Low. ST pin Low latch is released by setting the STBY pin to Low or set VDD voltage to “Low Voltage Detection (VUVLO-VUVLOHYS)” STBY Pin Voltage Power Supply (VDD) Under Voltage Detection IN Pin Voltage TSD ΔTj OCP Low * * * * High Detected * * High Undetected Low High Undetected High Output State OUT Pin ST Pin * OFF High * * OFF High * * * OFF High High Detected * * OFF Low Undetected High Undetected Detected * OFF High High Undetected High Undetected Undetected No Limit ON High High Undetected High Undetected Undetected Limited Current Limitation High Timing Chart VDD [V] VDD and VSTBY can be input simultaneously VDD VUVLOR VUVLOHYS VUVLOD t 0 VSTBY [V] VSTBY VSTBY(H) VSTBY(L) t 0 VIN [V] tSETUP ≥ 100 [µs] VIN VIN(H) VIN(L) 0 t VOUT [V] tONDLY [µs] tOFFDLY [µs] ≈ VBAT 80 % VOUT 0 ≈0V 20 % tF [µs] ( SR ON [V/µs ]) t tR [µs] ( SROFF [V/µs ]) Figure 27. Definition of Turn-ON TIME, Turn-OFF TIME, Fall TIME (Slew Rate ON), and Rise TIME (Slew Rate OFF) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 21/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Timing Chart ― Continued VIN [V] VIN(H) VIN VIN(L) 0 t VOUT [V] VOUT(CL) VOUT VBAT IOUT x RDS(ON) 0 t IOUT [A] VBAT ZL + RDS(ON) IOUT t 0 Figure 28. Inductive Load Operation www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 22/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Function Description ■ Over Current Protection Function This IC built-in over current protection function. Following is shown that the timing chart of over current protection function. Occurrence of Over Current Dissolution of Over Current ① ② V DD V STBY V IN V OUT IOUT(LIM) IOUT Normal Current V ST Figure 29. Timing Chart of OCP Function ① When an overcurrent occurs, IOUT is controlled by the overcurrent limit level (IOUT(LIM)) and VOUT rises. IOUT(LIM) is 7.5 A (Typ). The VST does not change at this time. ② When the overcurrent disappears, the over current limit is released. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 23/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Function Description – Continued ■ Dual TSD Function This IC has a built-in TSD function and ΔTj protection function. Following is shown that the timing chart of Dual TSD function. ① ② ① ② ① ② ③ ④③ ④ ③ ④ ③ ⑤ V DD V STBY V IN V OUT TTSDD TTSDR TPOWER-MO S Tj TDTJD T DTJR TAMB t STDET t STREL V ST ΔTj Protection Thermal Shutdown Figure 30. Timing Chart of Dual TSD Function ① ② ③ ④ ⑤ The temperature of Power MOS FET part and the control part in his IC is each T POWER-MOS, TAMB. When the temperature difference becomes 93 °C (Typ) or more, the output turns OFF. This temperature defines as ΔTj Protection Detected Temperature (TDTJD). At This time, the VST does not change. When the temperature difference of TPOWER-MOS and TAMB becomes 43 °C (Typ) or less, the output turns automatically ON. This temperature defines as ΔTj Protection Released Temperature (TDTJR). The output is turned off when the temperature of the IC reaches Thermal Shutdown Detected Temperature (TTSDD) = 175 °C (Typ) or more. At this time, the VST latches Low. The output returns to its normal state when the temperature of the IC becomes Thermal Shutdown Released Temperature (TTSDR) = 160 °C (Typ) or less. VST keeps latching Low. the VST become High after tSTREL when the VSTBY become Low. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 24/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Function Description ― Continued  Slew rate control function This IC can variably adjust the rise time (Slew Rate ON) and fall time (Slew Rate OFF) of OUT output voltage by setting the SR pin external resistor (RSR). The approximate expression when VBAT = 12V is as follows. (1.636 × 𝑅𝑆𝑅 ) ⁄ Rise time: 𝑡𝑅 = 1000 + 3.73 [µs] (1.636 × 𝑅𝑆𝑅 ) ⁄ Fall time: 𝑡𝐹 = 1000 + 3.73 [µs] (𝑉𝐵𝐴𝑇 × 0.8 − 𝑉𝐵𝐴𝑇 × 0.2)⁄ Slew Rate ON: 𝑆𝑅𝑂𝑁 = 𝑡 𝐹 [V / µs] (𝑉𝐵𝐴𝑇 × 0.8 − 𝑉𝐵𝐴𝑇 × 0.2)⁄ Slew Rate OFF: 𝑆𝑅𝑂𝐹𝐹 = 𝑡 𝑅 [V / µs] RSR recommended range: 24 kΩ to 150 kΩ (Calculation example) (1.636 × 150𝑘) ⁄ Rise time 3: 𝑡𝑅3 = 1000 + 3.73 = 249 [µs] (12 × 0.8 − 12 × 0.2)⁄ Slew Rate OFF 3: 𝑆𝑅𝑂𝐹𝐹3 = 249 = 0.029 [V / µs] 400 VBAT = 12V 350 Rise Time: tR [μs] Fall Time: tF [μs] 300 250 200 Max 150 Typ 100 Min 50 0 0 50 100 150 SR Resistor: RSR [kΩ] Figure 31. Output rise (fall) time vs The SR pin resistance www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 25/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C I/O Equivalent Circuit VDD ST 100 Ω VDD ST 100 Ω IN SR IN 39 kΩ SR 46 kΩ 15 kΩ STBY OUT STBY 41 kΩ OUT 47 k Ω 12 k Ω Resistor values in the figure are typical values. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 26/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. Ground Wiring Pattern When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Recommended Operating Conditions The function and operation of the IC are guaranteed within the range specified by the recommended operating conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical characteristics. 6. Inrush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 7. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 8. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 27/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Operational Notes ― Continued 9. Ceramic Capacitor When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. 10. Thermal Shutdown Function (TSD) This IC has a built-in thermal shutdown function that prevents heat damage to the IC. Normal operation should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD function that will turn OFF power output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD function operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD function be used in a set design or for any purpose other than protecting the IC from heat damage. 11. Over Current Protection Function (OCP) This IC incorporates an integrated overcurrent protection function that is activated when the load is shorted. This protection function is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications characterized by continuous operation or transitioning of the protection function. 12. Active Clamp Operation The IC integrates the active clamp function to internally absorb the reverse energy EL which is generated when the inductive load is turned off. When the active clamp operates, the thermal shutdown function does not work. Decide a load so that the reverse energy EL is active clamp tolerance EAS (refer to Figure 26. Active Clamp Energy (Single Pulse) vs Output Current (Start)) or under when inductive load is used. 13. Negative Current of Output When the OUT pin (DRAIN) becomes lower than the GND pin (SOURCE) voltage, a current flow from power supply pin (VDD) and the input pins (the STBY pin and the IN pin) to the OUT pin through a parasitic transistor. When the power supply pin is high, as shown in Figure 32, when the input pins are high, as shown in Figure 33, a current flow from the power supply pin and the input pins of connected parts (LDO, MCU, etc.) to the OUT pin. When the power supply pin is low, as shown in Figure 34, and when the input pins are low, as shown in Figure 35, a current flow from the power supply pin and the GND of parts (LDO, MCU, etc.) that connected to the input pins to the OUT pin. Therefore, set the OUT pin (DRAIN) is -0.3 V or higher. When the OUT pin becomes lower than -0.3 V, add a restriction resistance 82 Ω or higher to the VDD pin, a restriction resistance 1k Ω or higher to the STBY pin and a restriction resistance 1k Ω or higher to the IN pin. However, set the value of restriction resistance in consideration of the voltage descent caused by power supply pin and input pins currents. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 28/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C 13. Negative Current of Output ― Continued LDO, and so on GND (SOURCE) Restriction resistance Power supply pin N+ N+ N+ P- P+ N+ N+ P- Parasitic Element N-epi N+sub OUT (DRAIN) Figure 32. Negative Current Path (when the power supply pin is High) MCU, and so on GND (SOURCE) Restriction resistance Input pin N+ N+ N+ P- P+ N+ N+ P- Parasitic Element N-epi N+sub OUT (DRAIN) Figure 33. Negative Current Path (when the input pins are High) LDO, and so on GND (SOURCE) Restriction resistance Power supply pin N+ N+ N+ P- N+ P+ N+ P- Parasitic Element N-epi N+sub OUT (DRAIN) Figure 34. Negative Current Path (when the power supply pin is Low) MCU, and so on GND (SOURCE) Restriction resistance Input pin N+ N+ N+ P- P+ N+ N+ P- Parasitic Element N-epi N+sub OUT (DRAIN) Figure 35. Negative Current Path (when the input pins are Low) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 29/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Operational Notes ― Continued 14. Power Supply Steep Fluctuation If the voltage of the power supply pin (VDD) falls sharply, the output pin (OUT) may temporarily turn off as shown in Figure 36. If the power supply pin is expected to fall sharply, take measures such as inserting a capacitor between the power supply pin and the ground pin so that it falls within the recommended usage range shown in Figure 37. 2.5 VDD [V] 2.0 Deprecated use range VDD(FALL ) VDD 0 VDD(FALL) [V] tVDD(FALL) t VOUT[V] 0.5 VOUT ≈0V 1.0 Recommended use range ≈ VBAT 0 1.5 t 0.0 0 10 20 30 t VDD(FALL) [μs] Figure 36. Output OFF Operation when Power Supply Fluctuates Sharply www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 30/33 Figure 37. Recommended Use Range TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Ordering Information B V 1 L F 0 8 0 E F J Package EFJ: HTSOP-J8 C E 2 Product Grade C: For Automotive Packaging and Forming Specification E2: Embossed Tape and Reel Marking Diagram HTSOP-J8 (TOP VIEW) Part Number Marking V 1 L F 8 0 LOT Number Pin 1 Mark www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 31/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Physical Dimension and Packing Information Package Name www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 HTSOP-J8 32/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 BV1LF080EFJ-C Revision History Date Revision Changes 24.Jun.2020 001 New release 28.Oct.2020 002 Page 25. Updated slew rate control function formula. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 33/33 TSZ02201-0GYG1G400100-1-2 28.Oct.2020 Rev.002 Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001
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BV1LF080EFJ-CE2
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    • 1+29.288181+3.50056
    • 10+8.9291310+1.06722
    • 50+5.0590250+0.60466
    • 100+4.57526100+0.54684
    • 500+4.25548500+0.50862
    • 1000+4.189891000+0.50078
    • 2000+4.140692000+0.49490
    • 4000+4.116094000+0.49196

    库存:2286