DAN222TL

Data Sheet Band Switching Diode DAN222 Applications Ultra high speed switching Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 　　　 0.05 Features 1) Ultra small mold type. (EMD3) 2) High reliability. 0.7 1.6±0.2 0.15±0.05 0.7 0.1Min EMD3 0.6 1.3 0.6 0.55±0.1 0.5 0.5 1.0±0.1 Construction Silicon epitaxial planar 0.7 0～0.1 (1) (2) 0.2±0.1 　　-0.05 1.6±0.2 0.8±0.1 (3) 0.7±0.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) φ1.55±0.1 φ1.5 0.1 　　　　　00 2.0±0.05 0.3±0.1 8.0±0.2 0～0.1 1.8±0.2 1.8±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ0.5±0.1 0.9±0.2 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (single) Average rectified forward voltage (single) Surge current （t=1us） Power dissipation Junction temperature Storage temperature Rated in slash put frequency Electrical characteristics (Ta=25°C) Parameter Symbol VRM VR IFM Io Isurge Pd Tj Tstg f Limits Unit 80 80 300 100 4 150 150 55 to 150 100 V V mA mA A mW °C °C MHz Typ. Max. - - 1.2 V Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Ct - - 3.5 pF Reverse recovery time trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 Unit Conditions Symbol VF Min. Forward voltage IF=100mA 2011.06 - Rev.B Data Sheet DAN222 Ta=150℃ Ta=125℃ f=1MHz Ta=150℃ Ta=25℃ 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ 10 Ta=75℃ 100 Ta=25℃ 10 Ta=25℃ 1 0.1 0.01 0.1 0 100 200 300 400 500 600 700 800 900 1000 10 20 30 40 50 60 70 80 0 REVERSE VOLTAGE : VR(V) V R-IR CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS Ta=25℃ IF=100mA n=30pcs Ta=25℃ VR=80V n=10pcs REVERSE CURRENT : IR(nA) 90 930 920 910 80 70 60 50 40 AVE:9.655nA 30 8 20 7 6 5 4 AVE:1.17pF 3 2 1 0 0 VF DISPERSION MAP IR DISPERSION MAP 20 Ct DISPERSION MAP 5 Ifsm 15 8.3ms 10 5 AVE:3.50A 0 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT : I FSM(A) REVERSE RECOVERY TIME:trr(ns) 10 1cyc 5 4 3 2 1 Ifsm 4 8.3ms 2 1 0 1 IFSM DISRESION MAP trr DISPERSION MAP 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 9 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA 10 1ms time 8 7 6 5 3 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 AVE:0.97kV 2 0 0.01 AVE:2.54kV 4 1 300us 1 0.001 100 10 Rth(j-a) ELECTROSTATIC DDISCHARGE TEST ESD(KV) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT : IFSM(A) t 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 Ifsm 8.3ms 1cyc 3 AVE:1.93ns 0 100 20 Ta=25℃ VR=6V f=1MHz n=10pcs 9 10 AVE:921.7mV 900 5 10 15 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 10 100 950 940 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 FORWARD VOLTAGE : V F(mV) 10 1000 0.1 PEAK SURGE FORWARD CURRENT : I FSM(A) Ta=125℃ 10000 Ta=75℃ REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) 100 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A