DTB122JKT146

DTB122JK Transistors Digital transistor (built-in resistors) DTB122JK z Circuit schematic zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. R1 IN OUT R2 GND (+) IN OUT GND (+) zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol Limits Unit VCC VI −50 −5 to +5 V V IO Pd −500 200 mA mW C C Input voltage Output current Power dissipation Junction temperature Storage temperature Tj 150 Tstg −55 to +150 zPackage, marking, and packaging specifications Part No. DTB122JK Package Marking SMT3 Packaging code T146 Basic ordering unit (pieces) 3000 G3C zExternal characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗Transition frequency of the device. Symbol Min. Typ. Max. VI(off) − − −0.3 Unit VI(on) VO(on) −2 − −0.1 − −0.3 −45 mA VI= −5V −10 µA VCC= −30V , VI=0V IO= −50mA , VO= −5V − V GI − − − 47 R1 R2/R1 154 17.1 − 220 − 286 − Ω 21.3 25.6 fT − 200 − − MHz II IO(off) − − V Conditions VCC= −5V , IO= −100µA VO= −0.3V , IO= −30mA IO/II= −50mA/−2.5mA − VCE= −10V , IE=50mA , f=100MHz ∗ Rev.A 1/2 DTB122JK Transistors zElectrical characteristics curves −10 −5 −2 −1 −500m −500µ −200µ −100µ −50µ −20µ −10µ −2µ −1µ −1 200 100 50 20 10 5 −5µ −100m −500µ −1m −2m −5m Fig.1 Input voltage vs. Output current (ON characteristics) Ta=25 C VO= −5V 500 −2m −1m −200m −10m −20m −50m −100m −200m −500m 1000 Ta=25 C VCC= −5V −5m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(on) (V) −20 OUTPUT CURRENT : IO (A) 2 0 −500m −1 −1.5 −2 −2.5 −3 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. Input voltage (OFF characteristics) 1 −500µ −1m −2m −5m −10m −20m −50m −100m −200m −500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. Output current Ta=25 C IO/II=20 −500m OUTPUT VOLTAGE : VO(on) (V) −10m Ta=25 C VO= −0.3V −50 DC CURRENT GAIN : GI −100 −200m −100m −50m −20m −10m −5m −2m −1m −500µ −1m −2m −5m −10m −20m −50m −100m −200m −500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. Output current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1