DTC123TKAT146

DTC123TKA Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCEO Value IC 100mA R1 2.2kΩ or 50V 　 　 　 e N co ew m m D es en ig de ns d f 　 　 SMT3 　 SOT-346(SC-59) 　 　 　 　 　 　 　 　 　 　 　 　 l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of 　an inverter circuit without connecting external 　input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors 　with complete isolation to allow negative biasing 　of the input. They also have the advantage of 　completely eliminating parasitic effects. 4) Only the on/off conditions need to be set 　for operation, making the circuit design easy. 5) Lead Free/RoHS Compliant. l Inner circuit B: BASE C: COLLECTOR E: EMITTER R l Application Switching circuit, Inverter circuit, Interface circuit, ot Driver circuit 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 N l Packaging specifications Part No. DTC123TKA Package Package size Taping code SMT3 2928 T146 Reel size Tape width (mm) (mm) 180 8 Basic ordering unit.(pcs) Marking 3000 02 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/4 20121023 - Rev.001 DTC123TKA 　 　 　 　　 　 　　　　　　　　 Datasheet l Absolute maximum ratings (Ta = 25°C) Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC Power dissipation PD*1 100 mA 200 mW/Total e N co ew m m D es en ig de ns d f Collector current or Parameter Junction temperature Range of storage temperature Tj 150 ℃ Tstg -55 to +150 ℃ l Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 50μA 50 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V Emitter-base breakdown voltage BVEBO IE = 50μA 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.5 μA Emitter cut-off current IEBO VEB = 4V - - 0.5 μA VCE(sat) IC / IB = 5mA / 0.25mA - - 0.3 V DC current gain hFE VCE = 5V, IC = 1mA 100 250 600 - Input resistance R1 1.54 2.2 2.86 kΩ Transition frequency f T*2 - 250 - MHz N ot R Collector-emitter saturation voltage - VCE = 10V, IE = -5mA, f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 　 2/4 　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 20121023 - Rev.001 　　　　　　 DTC123TKA 　　　　　　　　 Datasheet l Electrical characteristic curves (Ta =25°C) Fig.2 Grounded emitter output characteristics e N co ew m m D es en ig de ns d f or Fig.1 Grounded emitter propagation characteristics Fig.4 Collector-emitter saturation voltage vs. Collector Current N ot R Fig.3 DC Current gain vs. Collector Current 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/4 20121023 - Rev.001 　　　　　　 DTC123TKA 　　　　　　　　 Datasheet N ot R e N co ew m m D es en ig de ns d f or l Dimensions 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 20121023 - Rev.001 N R e N co ew m m D es en ig de ns d f ot or