DTC143T series
Datasheet
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
l Outline
Parameter
VCEO
Value
IC
100mA
R1
4.7kΩ
VMT3
EMT3F
50V
DTC143TM
(SC-105AA)
l Features
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary PNP Types: DTA143T series
6) Complex transistors: EMH3/ UMH3N/ IMH3A/
EMG3/ UMG3N/ FMG3A (PNP type)
7) Lead Free/RoHS Compliant.
DTC143TEB
(SC-89)
EMT3
UMT3F
DTC143TE
SOT-416(SC-75A)
DTC143TUB
(SC-85)
UMT3
SMT3
DTC143TUA
SOT-323(SC-70)
DTC143TKA
SOT-346(SC-59)
l Inner circuit
B: BASE
C: COLLECTOR
E: EMITTER
l Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
l Packaging specifications
Package
Package
size
Taping
code
DTC143TM
DTC143TEB
VMT3
EMT3F
1212
1616
T2L
TL
180
180
DTC143TE
DTC143TUB
DTC143TUA
DTC143TKA
EMT3
UMT3F
UMT3
SMT3
1616
2021
2021
2928
TL
TL
T106
T146
180
180
180
180
Part No.
Basic
ordering
unit.(pcs)
Marking
8
8
8000
3000
03
03
8
8
8
8
3000
3000
3000
3000
03
03
03
03
Reel size Tape width
(mm)
(mm)
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/9
20121023 - Rev.001
DTC143T series
Datasheet
l Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC
100
mA
Collector current
Power dissipation
DTC143TM
150
DTC143TEB
150
DTC143TE
150
PD*1
DTC143TUB
DTC143TUA
200
DTC143TKA
200
Junction temperature
Range of storage temperature
mW
200
Tj
150
℃
Tstg
-55 to +150
℃
l Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Values
Conditions
Unit
Min.
Typ.
Max.
Collector-base breakdown
voltage
BVCBO
IC = 50μA
50
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
50
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 50μA
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
0.5
μA
Emitter cut-off current
IEBO
VEB = 4V
-
-
0.5
μA
VCE(sat)
IC / IB = 5mA / 0.25mA
-
-
0.15
V
DC current gain
hFE
VCE = 5V, IC = 1mA
100
250
600
-
Input resistance
R1
3.5
4.7
5.9
kΩ
Transition frequency
f T*2
-
250
-
MHz
Collector-emitter saturation voltage
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/9
20121023 - Rev.001
DTC143T series
Datasheet
l Electrical characteristic curves(Ta=25℃ )
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/9
20121023 - Rev.001
DTC143T series
Datasheet
l Dimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
4/9
20121023 - Rev.001
DTC143T series
Datasheet
l Dimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/9
20121023 - Rev.001
DTC143T series
Datasheet
l Dimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
6/9
20121023 - Rev.001
DTC143T series
Datasheet
l Dimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
7/9
20121023 - Rev.001
DTC143T series
Datasheet
l Dimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
8/9
20121023 - Rev.001
DTC143T series
Datasheet
l Dimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
9/9
20121023 - Rev.001
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