DTC143T series
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
l Outline
Parameter
VCEO
Value
IC
100mA
R1
4.7kΩ
SOT-723
SOT-416FL
50V
DTC143TM
(VMT3)
l Features
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
for operation, making the circuit design easy.
4) Complementary PNP Types: DTA143T series
DTC143TEB
(EMT3F)
SOT-416
SOT-323FL
DTC143TE3
(EMT3)
DTC143TUB
(UMT3F)
SOT-323
l Application
INVERTER, INTERFACE,DRIVER
l Inner circuit
DTC143TM/ DTC143TEB/ DTC143TUB
SOT-346
DTC143TU3
(UMT3)
DTC143TKA
(SMT3)
DTC143TE3/ DTC143TU3/ DTC143TKA
l Packaging specifications
Part No.
Package
Package
size
Taping
code
Quantity
(pcs)
Marking
DTC143TM
SOT-723
1212
T2L
180
8
8000
03
DTC143TEB
SOT-416FL
1616
TL
180
8
3000
03
DTC143TE3
SOT-416
1616
TL
180
8
3000
03
DTC143TUB
SOT-323FL
2021
TL
180
8
3000
03
DTC143TU3
SOT-323
2021
T106
180
8
3000
03
DTC143TKA
SOT-346
2928
T146
180
8
3000
03
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Reel size Tape width
(mm)
(mm)
20230510 - Rev.004
DTC143T series
Datasheet
l Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC
100
mA
Collector current
Power dissipation
DTC143TM
150
DTC143TEB
150
DTC143TE3
150
PD*1
DTC143TUB
DTC143TU3
200
DTC143TKA
200
Junction temperature
Range of storage temperature
mW
200
Tj
150
℃
Tstg
-55 to +150
℃
l Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Values
Conditions
Unit
Min.
Typ.
Max.
Collector-base breakdown
voltage
BVCBO
IC = 50μA
50
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
50
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 50μA
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
500
nA
Emitter cut-off current
IEBO
VEB = 4V
-
-
500
nA
VCE(sat)
IC = 5mA, IB = 0.25mA
-
-
300
mV
DC current gain
hFE
VCE = 5V, IC = 1mA
100
250
600
-
Input resistance
R1
3.29
4.7
6.11
kΩ
Transition frequency
f T*2
-
250
-
MHz
Collector-emitter saturation voltage
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
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20230510 - Rev.004
DTC143T series
Datasheet
l Electrical characteristic curves(Ta=25℃ )
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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20230510 - Rev.004
DTC143T series
Datasheet
l Dimensions
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20230510 - Rev.004
DTC143T series
Datasheet
l Dimensions
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20230510 - Rev.004
DTC143T series
Datasheet
l Dimensions
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20230510 - Rev.004
DTC143T series
Datasheet
l Dimensions
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20230510 - Rev.004
DTC143T series
Datasheet
l Dimensions
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20230510 - Rev.004
DTC143T series
Datasheet
l Dimensions
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20230510 - Rev.004
Notice
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De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
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Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
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2.
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For details, please refer to ROHM Mounting specification
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© 2015 ROHM Co., Ltd. All rights reserved.
Rev.004
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[b] the temperature or humidity exceeds those recommended by ROHM
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[d] the Products are exposed to high Electrostatic
2.
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3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
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© 2015 ROHM Co., Ltd. All rights reserved.
Rev.004
Datasheet
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© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001