DTD133HKT146

DTD133H Transistors Digital transistors (Includes resistors) DTD133H !External dimensions (Units : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) DTD133HK 1.6 0.8 0to0.1 0.3to0.6 ROHM : SMT3 EIAJ : SC-59 1.1 2.8 0.15 !Features 1) A built-in bias resistor allows inverter circuit configuration without external resistors for input (see equivalent circuit diagram). 2) The bias resistor consists of a thin-film resistor which is completely isolated, providing the capability to negative-bias the input, and avoiding parasitic effects. 3) Operation starts by simply setting On/Off conditions, simplifying the design of equipment using the transistors. 4) High packing density. Each lead has same dimensions (1) GND (2) IN (3) OUT !Absolute maximum ratings (Ta=25°C) Pd Tj Tstg Unit V V mA DTD133HS 4 2 3Min. Limits 50 −6~+20 500 200 300 150 −55~+150 3 Symbol VCC VI IC (15Min.) Parameter Supply voltage Input voltage Output current DTD133HK Power dissipation DTD133HS Junction temperature Storage temperature mW °C °C 0.45 2.5 0.5 0.45 5 (1) (2) (3) (1) GND (2) OUT (3) IN ROHM : SPT EIAJ : SC-72 !Equivalent circuit !Package, marking, and packaging specifications Part No. Package Marking Packaging code Basic ordering unit (pieces) DTD133HK DTD133HS SMT3 G08 SPT - T146 3000 TP 5000 Taping specifications R1 IN OUT R2 GND IN OUT GND !Electrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol Min. Typ. Max. VI(off) VI(on) VO(on) − 2.0 − 0.5 − 0.1 − − 0.3 2.4 0.5 − − II IO(off) − − − 56 − R1 − − 3.3 R2/R1 fT 2.4 3.0 3.7 − 200 − GI Unit V V Conditions VCC=5V , IO=100µA VO=0.3V , IO=20mA IO=50mA , II=2.5mA V mA VI=5V µA − VCC=50V , VI=0V IO=50mA , VO=5V kΩ − MHz − − VCE=10V , IE=−5mA , f=100MHz ∗ ∗Transition frequency of the device. 1/2 DTD133H Transistors !Electrical characteristics curves 10m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 20 10 Ta=−40˚C 25˚C 100˚C 5 2 1 500m 200m 1k VCC=5V 5m 50 2m Ta=100˚C 25˚C −40˚C 1m 500µ 200µ 100µ 50µ 20µ 10µ 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 200 100 Ta=100˚C 25˚C −40˚C 50 20 10 5 5µ 2 2µ 100m 500µ 1m VO=5V 500 DC CURRENT GAIN : GI 100 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current characteristics lO / lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m 200m 100m 50m 20m 10m Ta=100˚C 25˚C −40˚C 5m 2m 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current characteristics 2/2