EML20T2R

EML20 Transistors General purpose transistor (isolated transistor and diode) EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4) 1.6 1.2 zFeatures 1) Tr : NPN digital transistor Di : Low VF 2) Mounting possible with EMT3 automatic mounting machines. 1pin mark (1) (2) (3) 0.22 0.13 Each lead has same dimensions zStructure NPN Silicon epitaxial planar digital transistor Schottky barrier diode Abbreviated symbol : L20 ROHM : EMT6 The following characteristics apply to both Di1 and DTr2. zEquivalent circuit (6) (5) (4) R1 Di1 DTr2 R2 (1) (2) (3) R1=2.2kΩ, R2=47kΩ zPackaging specifications Type Package Marking Code Basic ordering unit (pieces) EML20 EMT6 L20 T2R 8000 1/3 EML20 Transistors zAbsolute maximum ratings (Ta=25°C) Di1 Parameter Symbol IO Average revtified forward current Forward current surge peak (60Hz, 1∞) IFSM VR Reverse voltage (DC) Tj Junction temperature Limits 200 1 30 125 Unit mA A V °C DTr2 Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN Parameter 12 V −5 IO 100 mA IC (MAX.) 100 mA Power dissipation Pd 120 mW Junction temperature Tj 150 °C Symbol Limits Unit Pd 150 Tstg −55 to +125 Output current ∗ ∗ Each terminal mounted on a recommended. Di1 / DTr2 Parameter Power dissipation Storage temperature ∗ mW ∗ °C Each terminal mounted on a recommended. zElectrical characteristics (Ta=25°C) Di1 Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. 0.40 4.0 Max. 0.50 30 Unit V µA IF=200mA VR=10V Conditions Symbol Vl(off) Min. − Typ. − Max. 0.5 Unit V Conditions VCC=5V / Io=100uA VI(on) Vo(on) II IO(off) GI fT R1 R2/R1 1.1 − − − 80 − 1.54 17 − 100 − − − 250 2.2 21 − 300 3.6 500 − − 2.86 26 V mV mA VO=0.3V / Io=5mA IO=5mA, II=0.25mA VI=5V VCC=50V / VI=0V VO=5V / Io=10mA VCE=10V / IE= −5mA, f=100MHz − DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio ∗ nA − MHz kΩ − − ∗ Characteristics of built-in transistor. 2/3 EML20 Transistors zElectrical characteristic curves Di1 Ta=125℃ 10 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 0.01 Ta=75℃ 1000 100 Ta=25℃ 10 10 Ta=-25℃ 1 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 Ta=125℃ 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 100 100000 1000 0.1 0.01 0.001 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 500 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 30 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V VO=5V 500 2m DC CURRENT GAIN : GI 100 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ Ta=100°C 25°C −40°C 200 100 50 20 10 5 2 2µ 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1