EMT3T2R

EMT3 / IMT3A Transistors General purpose (dual transistors) EMT3 / IMT3A zExternal dimensions (Unit : mm) zFeatures 1) Two 2SA1037AK chips in a EMT or SMT package. 0.22 zEquivalent circuits EMT3 (2) (1) (4) (4) (6) (5) (3) (5) (6) (2) 1.2 1.6 (1) Tr2 (4) Tr2 Tr1 (5) (6) (3) 0.5 0.13 (3) IMT3A 0.5 0.5 1.0 1.6 EMT3 Tr1 (2) (1) Each lead has same dimensions ROHM : EMT6 V (5) Collector-emitter voltage VCEO −50 V (4) Emitter-base voltage VEBO −6 V IC −150 mA 300(TOTAL) IMT3A Junction temperature Storage temperature Tj 150 °C Tstg −55 to +150 °C (2) (3) 2.8 ∗1 ∗2 0.3Min. 1.1 mW 0.8 150(TOTAL) PC 0~0.1 EMT3 Collector power dissipation 1.6 0.15 Collector current (1) Unit −60 (6) Limits VCBO Parameter 0.3 Symbol Collector-base voltage 0.95 0.95 1.9 2.9 IMT3A zAbsolute maximum ratings (Ta=25°C) Each lead has same dimensions ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. ROHM : SMT6 EIAJ : SC-74 zPackage, marking, and packaging specifications Type EMT3 IMT3A Package EMT6 SMT6 Marking Code T3 T2R T108 8000 3000 Basic ordering unit (pieces) T3 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −60 − − V IC=−50µA Conditions Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO −6 − − − − −0.1 V µA IE=−50µA VCB=−60V VEB=−6V IEBO − − −0.1 µA VCE(sat) − − −0.5 V IC/IB=−50mA/−5mA hFE 120 − 560 − VCE=−6V, IC=−1mA Transition frequency fT − 140 − MHz Output capacitance Cob − 4 5 pF Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio VCE=−12V, IE=2mA, f=100MHz ∗ VCE=−12V, IE=0A, f=1MHz ∗Transition frequency of the device. Rev.A 1/2 EMT3 / IMT3A Transistors zElectrical characteristics curves −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA −0.4 −0.8 −1.2 DC CURRENT GAIN : hFE 25˚C 200 100 −40˚C 100 50 50 −250 −150 −40 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 1000 TRANSITION FREQUENCY : fT (MHz) −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) 500 200 100 50 0.5 1 2 5 10 20 50 −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) Ta=25˚C VCE= −12V lC/lB=10 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) −0.5 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE= −6V −5 −10 −20 −50 −100 −2 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.2 −0.5 −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −500 −450 −400 −350 −300 Fig.3 Grounded emitter output characteristics (II) Ta=100˚C 200 Ta=25˚C −200 Fig.2 Grounded emitter output characteristics (I) VCE= −5V −3V −1V Ta=25˚C −60 IB=0 −1.6 −2.0 500 500 −80 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE −28.0 −8 0 BASE TO EMITTER VOLTAGE : VBE (V) −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE= −6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1