EMX5T2R

High transition frequency (dual transistors) EMX5 / UMX5N / IMX5 Features 1) Two 2SC3838K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=3.2GHz) 3) Low output capacitance. (Cob=0.9pF) Dimensions (Unit : mm) EMX6 Inner circuits EMX5 / UMX5N (3) (2) IMX5 (1) (4) Tr2 (5) (6) Tr2 ROHM : EMT6 Tr1 SOT-563 Tr1 (4) (5) (6) (3) (2) Each lead has same dimensions UMX5N (1) Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 11 V Emitter-base voltage VEBO 3 V IC 50 mA Parameter Collector current Collector power dissipation EMX5 / UMX5N 150(TOTAL) Pc IMX5 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 ROHM : UMT6 EIAJ : SC-88 ∗2 Each lead has same dimensions IMX5 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Package, marking, and packaging specifications Type EMX5 UMX5N IMX5 Package EMT6 UMT6 SMT6 Marking Code X5 T2R X5 TR T108 Basic ordering unit (pieces) 8000 3000 3000 X5 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/2 2010.09 - Rev.C EMX5 / UMX5N / IMX5 Data Sheet Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 20 − − V IC=10μA Collector-emitter breakdown voltage BVCEO 11 − − V IC=1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO 3 − − − − 0.5 V μA IE=10μA VCB=10V Emitter cutoff current IEBO − − 0.5 μA DC current transfer ratio hFE 56 − 120 − VCE(sat) − − 0.5 V Transition frequency fT 3.2 − GHz Output capacitance Cob 1.4 − 0.9 1.55 pF Collector-emitter saturation voltage Conditions VEB=2V VCE/IC=10V/5mA IC/IB=10mA/5mA VCE/IE=10V/−10mA, f=500MHz ∗ VCB/f=10V/1MHz, IE=0A ∗Transition frequency of the device. 200 100 50 20 0.5 1 5 2 10 20 50 200 100 50 Ic/IB=10 20 Ic/IB=2 10 0.1 0.2 COLLECTOR CURRENT : IC (mA) 2.0 Cob Cre 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 1 2 5 10 20 2.0 1.0 0.5 0.2 0.1 −0.1 −0.2 50 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Capacitance vs. reverse bias voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 50 −0.5 −1 −2 −5 −10 −20 −50 EMITTER CURRENT : IE (mA) Fig.2 Collector-emitter saturation voltage vs. collector current COLLECTOR TO BASE TIME CONSTANT : Cc rbb'(ps) OUTPUT CAPACITANCE : Cob (pF) FEEDBACK CAPACITANCE : Cre (pF) Ta=25°C f=1MHz IE=0A 1.0 0.5 Ta=25°C VCE=10V COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current 5.0 Ta=25°C Fig.3 Gain bandwidth product vs. emitter current Ta=25°C VCE=6V f=500MHz Ta=25°C VCE=10V f=31.8MHz NOISE FIGURE : NF (dB) 10 0.1 0.2 5.0 500 TRANSITION FREQUENCY : fT (GHz) Ta=25°C VCE=10V 500 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) DC CURRENT TRANSFER RATIO : hFE Electrical characteristics curves 20 10 5.0 20 10 2.0 1.0 0.1 0.2 0 0.1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.6 Noise factor vs. collector current characteristics Fig.5 Collector to base time constant vs. collector current characteristics 2/2 2010.09 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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