ES6U2

1.5V Drive Nch+SBD MOSFET ES6U2 Structure Silicon N-channel MOSFET / Schottky barrier diode Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. Dimensions (Unit : mm) WEMT6 (6) (5) (4) (1) (2) (3) Abbriviated symbol : U02 Applications Switching Inner circuit (6) (5) (4) Package specifications Package Type ES6U2 (1) ∗1 ESD protection diode ∗2 Body diode Taping T2R 8000 ∗1 (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain Code Basic ordering unit (pieces) ∗2 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗2 Limits 20 ±10 ±1.5 ±3.0 0.5 3.0 150 0.7 Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cyc. ∗2 Mounted on ceramic board Symbol VRM VR IF IFSM Tj PD ∗1 Limits 25 20 0.5 2.0 150 0.5 Unit V V A A °C W / ELEMENT ∗2 Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg Limits 0.8 −55 to +150 Unit W / TOTAL °C www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.12 - Rev.A ES6U2 Electrical characteristics (Ta=25°C) Parameter Symbol Min. − 20 − 0.3 − − − − 1.6 − − − − − − − − − − Typ. − − − − 130 170 220 300 − 110 18 15 5 5 20 3 1.8 0.3 0.3 Max. ±10 − 1 1.0 180 240 310 600 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 2.5V ID= 0.8A, VGS= 1.8V ID= 0.3A, VGS= 1.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz Data Sheet IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ VDD 10V ID= 1A VGS= 4.5V RL 10Ω RG= 10Ω VDD 10V, VGS= 4.5V ID= 1.5A, RL 6.7Ω RG= 10Ω Parameter Symbol Min. Forward voltage ∗Pulsed Typ. − Max. 1.2 VSD ∗ − Unit V Conditions IS= 1.5A, VGS=0V Parameter Forward voltage Reverse current Symbol VF IR Min. − − − Typ. − − − Max. 0.36 0.52 100 Unit V V µA IF= 0.1A IF= 0.5A VR= 20V Conditions www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.12 - Rev.A ES6U2 Electrical characteristics curves 1.5 DRAIN CURRENT : ID [A] VGS= 10V VGS= 4.5V VGS= 2.5V Ta=25°C Pulsed DRAIN CURRENT : ID [A] 1.5 VGS= 4.5V VGS= 1.8V VGS= 1.5V 1 Ta=25°C Pulsed DRAIN CURRENT : ID [A] 10 VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Data Sheet 1 1 VGS= 1.8V VGS= 1.5V 0.1 0.5 VGS= 1.3V 0.5 VGS= 1.1V 0 VGS= 1.3V 0.01 VGS= 1.2V 0 0 0.2 0.4 0.6 0.8 1 0.001 0 2 4 6 8 10 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta= 25°C Pulsed 10000 VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 VGS= 2.5V Pulsed 1000 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] VGS= 1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= 1.5V Pulsed 10 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) DRAIN-CURRENT : ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.12 - Rev.A ES6U2 10 REVERSE DRAIN CURRENT : Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed 600 500 ID = 0.8A 400 ID = 1.5A 300 200 100 tr 0 0 0.5 1 1.5 0 2 4 6 8 10 1 0.01 0.1 1 10 Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 Ta=25°C VDD = 10V VGS=4.5V RG=10Ω Pulsed Data Sheet td(off) 100 tf 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 td(on) 0.01 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : ID [A] Fig.12 Switching Characteristics 5 GATE-SOURCE VOLTAGE : VGS [V] 1000 CAPACITANCE : C [pF] 4 Ta=25°C f=1MHz VGS=0V Ciss 3 100 Coss Crss 2 Ta=25°C VDD = 10V ID = 1.5A RG=10Ω Pulsed 0 0.5 1 1.5 2 1 0 10 0.01 0.1 1 10 100 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 100000 10000 REVERSE CURRENT : IR (A) 1000 100 10 1 0.1 0.01 0 5 10 15 20 25 REVERSE VOLTAGE : VR [V] Fig.1 Reverse Current vs. Reverse Voltage Ta= - 25℃ Ta = 75℃ Ta = 25℃ pulsed FORWARD CURRENT : I F ( A) 1 pulsed 0.1 Ta = 75℃ Ta = 25℃ 0.01 Ta= - 25℃ 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.12 - Rev.A ES6U2 Measurement circuit Pulse Width ID VGS RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% tr ton 90% 50% 10% 90% td(off) toff tf td(on) Fig.1-1 Switching Time Measurement Circuit VG ID VGS RL IG(Const.) RG D.U.T. VDD VDS Fig.1-2 Switching Waveforms Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. 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