ES6U3

4V Drive Nch+SBD MOSFET ES6U3 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions (Unit : mm) WEMT6 (6) (5) (4) Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode. (1) (2) (3) Abbriviated symbol : U03 Applications Switching Inner circuit (6) (5) (4) Package specifications Package Type ES6U3 Code Basic ordering unit (pieces) Taping T2R 8000 (1) ∗1 ESD protection diode ∗2 Body diode ∗2 (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain ∗1 (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗2 Limits 30 ±20 ±1.4 ±2.8 0.5 2.8 150 0.7 Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cyc. ∗2 Mounted on a ceramic board Symbol VRM VR IF IFSM Tj PD ∗1 Limits 25 20 0.5 2.0 150 0.5 Unit V V A A °C W / ELEMENT ∗2 Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg Limits 0.8 −55 to +150 Unit W / TOTAL °C www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.03 - Rev.A ES6U3 Electrical characteristics (Ta=25°C) Parameter Data Sheet Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 1.0 − − − 1 − − − − − − − − − − Typ. − − − − 170 250 270 − 70 15 12 6 6 13 8 1.4 0.6 0.3 Max. ±10 − 1 2.5 240 350 380 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.4A, VGS= 10V ID= 1.4A, VGS= 4.5V ID= 1.4A, VGS= 4V VDS= 10V, ID= 1.4A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.7A VGS= 10V RL 21Ω RG= 10Ω VDD 15V, VGS= 5V ID= 1.4A, RL 11Ω RG= 10Ω Parameter Symbol Min. Forward voltage ∗Pulsed Typ. − Max. 1.2 VSD ∗ − Unit V Conditions IS= 1.4A, VGS=0V Parameter Forward voltage Reverse current Symbol VF IR Min. − − − Typ. − − − Max. 0.36 0.52 100 Unit V V µA IF= 0.1A IF= 0.5A VR= 20V Conditions www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.03 - Rev.A ES6U3 Electrical characteristics curves < MOSFET > 1000 Ta=25°C f=1MHz VGS=0V 1000 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed 10 Ta=25°C 9 VDD=15V ID=1.4A 8 RG=10Ω Pulsed 7 6 5 4 3 2 1 0 0 1 2 Data Sheet tf 100 100 Ciss td (off) 10 Coss Crss 10 td (on) tr 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 GATE SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 3 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) 10 VDS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C Fig.2 Switching Characteristics 1000 10 Fig.3 Dynamic Input Characteristics Ta=25°C 900 Pulsed 800 700 600 500 ID=0.7A ID=1.4A VGS=0V Pulsed 1 SOURCE CURRENT : IS (A) DRAIN CURRENT : ID (A) 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 400 300 200 100 0 0 2 4 6 8 10 0.1 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage VGS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) 10000 10000 10000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=4V Pulsed 1000 1000 1000 100 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 Ta=25°C Pulsed VGS=4V VGS=4.5V VGS=10V 100 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.03 - Rev.A ES6U3 < Di > 100000 10000 REVERSE CURRENT : IF ( µ A) 1000 100 10 1 0.1 0.01 0 5 10 15 20 25 REVERSE VOLTAGE : VR [V] Fig.1 Reverse Current vs. Reverse Voltage Ta= - 25℃ Ta = 75℃ Ta = 25℃ pulsed FORWARD CURRENT : IF ( A) 1 pulsed Data Sheet 0.1 Ta = 75℃ Ta = 25℃ 0.01 Ta= - 25℃ 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage Measurement circuit Pulse Width ID VGS RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% tr ton 90% 50% 10% 90% td(off) toff tf td(on) Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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