ES6U41_12

2.5V Drive Nch+SBD MOSFET ES6U41 Structure Silicon N-channel MOSFET / Schottky barrier diode Features 1) Nch MOSFET and schottky barrier diodeare put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Applications Switching Package specifications Package Type ES6U41 ∗2 (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain Dimensions (Unit : mm) WEMT6 (6) (5) (4) (1) (2) (3) Abbreviated symbol : U41 Inner circuit Taping T2R 8000 (6) (5) (4) Code Basic ordering unit (pieces) ∗1 Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗2 Limits 30 ±12 ±1.5 ±6.0 0.75 6.0 150 0.7 Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cycle ∗2 Mounted on ceramic board Symbol VRM VR IF IFSM Tj PD ∗1 Limits 25 20 0.5 2.0 150 0.5 Unit V V A A °C W / ELEMENT ∗2 Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg Limits 0.8 −55 to +150 Unit W / TOTAL °C www.rohm.com c ○ 2012 ROHM Co., Ltd. All rights reserved. 1/4 2012.02 - Rev.B ES6U41 Electrical characteristics Parameter Symbol Min. − 30 − 0.5 − − − 1.5 − − − − − − − − − − Typ. − − − − 170 180 240 − 80 14 12 7 9 15 6 1.6 0.5 0.3 Max. ±10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz Data Sheet IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ VDD 15V ID= 0.75A VGS= 4.5V RL 20Ω RG= 10Ω VDD 15V, VGS= 4.5V ID= 1.5A, RL 10Ω RG= 10Ω Parameter Symbol Min. Forward voltage VSD − Typ. − Max. 1.2 Unit V Conditions IS= 0.75A, VGS=0V Parameter Forward voltage Reverse current Symbol VF IR Min. − − − Typ. − − − Max. 0.36 0.52 100 Unit V V μA IF= 0.1A IF= 0.5A VR= 20V Conditions www.rohm.com c ○ 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.02 - Rev.B ES6U41 Electrical characteristics curves 2 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 2.2V VGS= 1.8V VGS= 1.7V 0.5 VGS= 1.6V Ta=25°C Pulsed 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 2 DRAIN CURRENT : ID[A] VGS= 10V VGS= 2.5V VGS= 2.2V Ta=25°C Pulsed DRAIN CURRENT : ID[A] VGS= 1.8V 10 VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Data Sheet DRAIN CURRENT : ID[A] 1.5 1.5 1 1 1 VGS= 1.7V VGS= 1.6V 0.1 0.5 VGS= 1.5V 0.01 0.001 0.5 1.0 1.5 2.0 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] Ta=25°C Pulsed 1000 VGS= 4.5V Pulsed 1000 VGS= 4.0V Pulsed 100 VGS= 2.5V VGS= 4.0V VGS= 4.5V 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 10 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 1000 VGS= 2.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 REVERSE DRAIN CURRENT : Is [A] VDS= 10V Pulsed 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 0.1 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 0.01 0.2 0.4 0.6 0.8 1.0 1.2 DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2012 ROHM Co., Ltd. All rights reserved. 3/4 2012.02 - Rev.B ES6U41 Data Sheet 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 800 600 400 200 0 0 2 4 6 ID= 1.50A ID= 0.75A GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C Pulsed 1000 SWITCHING TIME : t [ns] Ta=25°C VDD= 15V VGS= 4.5V RG=10Ω Pulsed 5 4 3 2 1 0 0 0.5 1 1.5 2 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics td(off) 100 tf 10 td(on) 1 8 10 0.01 0.1 tr 1 10 Ta=25°C VDD= 15V ID= 1.5A RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : ID[A] Fig.11 Switching Characteristics 1000 CAPACITANCE : C [pF] Ciss 100 Crss 10 Coss Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage 100000 REVERSE CURRENT ::IIR (A) F (A) 10000 1000 100 10 1 0.1 0.01 0 pulsed Ta = 75℃ Ta = 25℃ FORWARD CURRENT : IF (A) 1 pulsed 0.1 Ta = 75℃ 0.01 Ta = 25℃ Ta= - 25℃ Ta= - 25℃ 0.001 5 10 15 20 25 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage REVERSE VOLTAGE : VR[V] Fig.1 Reverse Current vs. Reverse Voltage www.rohm.com c ○ 2012 ROHM Co., Ltd. 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