FMA9

UMA9N / FMA9A Transistors Digital transistor (Common Emitter Dual Transistors) UMA9N / FMA9N !Features 1) Two DTA114E chips in UMT and SMT packages. 2) Mounting cost and area can be cut in half. !External dimensions (Units : mm) UMA9N 2.0±0.2 1.3±0.1 0.65 0.65 FMA9A 2.9±0.2 0.9±0.1 0.7 (3) 1.25±0.1 1.9±0.2 0.95 0.95 1.1 +0.2 −0.1 0.8±0.1 (5) 0.2 1.6 +0.1 − (2) (3) (1) 2.1±0.1 (4) 2.8±0.2 0~0.1 (2) (1) 0~0.1 !Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type) (4) 0.2 (5) +0.1 −0.05 0.1Min. 0.15±0.05 All terminals have same dimensions. All terminals have same dimensions. ROHM : UMT5 EIAJ : SC-88A ROHM : SMT5 EIAJ : SC-74A (3) R1 DTr2 R2 (2) R2 (1) R1 DTr1 (5) R1 = 10kΩ (3) R1 DTr2 (2) R2 (4) R2 (5) R1 DTr1 (1) The following characteristics apply to both DTr1 and DTr2. (4) R2 = 10kΩ Abbreviated symbol: A10 R1 = 10kΩ R2 = 10kΩ !Absolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Symbol VCC VIN IO Output current Power dissipation UMA9N FMA9A Tj Tstg IC (MAX.) Pd Limits −50 −40 10 −50 −100 150 (TOTAL) 300 (TOTAL) 150 −50~+150 °C °C Unit V V mA mW *1 *2 Junction temperature Storage temperature * * 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. !Electrical characteristics (Ta = 25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2/R1 Min. − −3.0 − − − 30 − 7 0.8 Typ. − − −0.1 − − − 250 10 1 Max. −0.5 − −0.3 −0.88 −0.5 − − 13 1.2 Unit V V mA µA − MHz kΩ − Conditions VCC = −5V, IO = −100µA VO = −0.3V, IO = −10mA IO/II = −10mA / −0.5mA VI = −5V VCC = −50V, VI = 0V IO = −5mA, VO = −5V VCE = −10mA, IE = 5mA, f = 100MHZ − − * * Transition frequency of the device 0.3~0.6 0.3 +0.1 −0.05 0.15 +0.1 −0.06 UMA9N / FMA9A Transistors !Packaging specifications Packaging type Code Part No. UMA9N FMA9A Basic ordering unit (pieces) TR 3000 Taping T148 3000 - !Electrical characteristic curves -100 -50 VO = −0.3V OUTPUT CURRENT : Io (A) -10m -5m -2m -1m -500µ -200µ -100µ -50µ -20µ -10µ -5µ -2µ -1µ VCC = −5V Ta = 100°C 25°C −40°C 1k 500 VO = −5V Ta = 100°C 25°C −40°C INPUT VOLTAGE : VI (on) (V) DC CURRENT GAIN : GI -20 -10 -5 -2 -1 200 100 50 20 10 5 2 1 Ta = −40°C 25°C 100°C -500m -200m -100m -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m-100m 0 -0.5 -1 -1.5 -2 -2.5 -3 -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current -1 -500m lO/lI = 20 Ta = 100°C 25°C −40°C OUTPUT VOLTAGE : VO (on) (V) -200m -100m -50m -20m -10m -5m -2m -1m -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current