FMG8AT148

EMG8 / UMG8N / FMG8A Transistors Emitter common (dual digital transistors) EMG8 / UMG8N / FMG8A !External dimensions (Units : mm) !Features 1) Two DTC143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) 0.22 (4) (2) 1.2 1.6 (1) 0.5 0.13 (5) !Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) 0.5 0.5 1.0 1.6 EMG8 Each lead has same dimensions ROHM : EMT5 Abbreviated symbol : G8 2.0 (2) (1) (6) 1.3 (3) (4) 0.2 The following characteristics apply to both the DTr1 and DTr2. 0.65 0.65 UMG8N 1.25 0.1Min. (2) Abbreviated symbol : G8 FMG8A (1) (5) (1) (4) 0.3 (5)/(6) R2 2.9 R2 ROHM : UMT5 EIAJ : SC-88A (5) R1=4.7kΩ R1 R2=47kΩ DTr1 1.1 R1 DTr2 (4) 0.8 (3) 0.95 0.95 1.9 (4) R2 (1) R1=4.7kΩ R1 R2=47kΩ DTr1 (3) R2 FMG8A (2) R1 DTr2 (2) 0.9 Each lead has same dimensions EMG8 / UMG8N (3) 0to0.1 !Equivalent circuit 0.7 0.15 2.1 1.6 !Absolute maximum ratings (Ta = 25°C) 0.3to0.6 Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN Parameter Output current 30 −5 IO 100 IC (Max.) 100 150 (TOTAL) Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C mW 300 (TOTAL) ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Abbreviated symbol : G8 mA Pd Each lead has same dimensions ROHM : SMT5 EIAJ : SC-74A V EMG8, UMG8N Power dissipation FMG8A 0to0.1 0.15 2.8 ∗1 ∗2 EMG8 / UMG8N / FMG8A Transistors !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI (off) − − 0.5 VI (on) 1.3 − − VO (on) − 0.1 0.3 V II − − 1.8 mA IO (off) − − 0.5 µA VCC=50V, VI=0V GI 80 − − − VO=5V, IO=10mA Input voltage Output voltage Input current Output current DC current gain Unit V Conditions VCC=5V, IO=100µA VO=0.3V, IO=5mA IO=5mA, II=0.25mA VI=5V Transition frequency fT − 250 − MHz Input resistance R1 3.29 4.7 6.11 kΩ − Resistance ratio R2/R1 8 10 12 − − ∗ VCE=10mA, IE=−5mA, f=100MHz ∗ Transition frequency of the device !Packaging specifications Package Type Taping Code T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 EMG8 UMG8N FMG8A !Electrical characteristic curves 100 10m VO=0.3V 10 5 2 Ta=−40˚C 25˚C 100˚C 1 500m 200m 100m 100µ 200µ 2m 5m 10m 20m 50m100m Fig.1 Input voltage vs. output current (ON characteristics) OUTPTUT VOLTAGE : VO (on) (V) 1 lO/lI=20 500m 100m Ta=100˚C 25˚C −40˚C 50m 20m 10m 5m 2m 1m 100µ 200µ 1m 500µ 200µ Ta=100˚C 25˚C −40˚C 100µ 50µ 20µ 10µ 500µ 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 200 100 Ta=100˚C 25˚C −40˚C 50 20 10 5 5µ 1µ 0 2 0.5 1.0 1.5 2.0 2.5 INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) 200m 2m 2µ 500µ 1m VO=5V 500 DC CURRENT GAIN : GI OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 20 1k VCC=5V 5m 50 Fig.2 Output current vs. input voltage (OFF characteristics) 3.0 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current