FMN1

Diodes FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N !Applications Ultra high speed switching !External dimensions (Units : mm) FMN1 / FMP1 2.9±0.2 1.9±0.2 0.95 0.95 1.1 +0.2 −0.1 UMN1N / UMP1N 2.0±0.2 1.3±0.1 0.8±0.1 0.9±0.1 0.7 0.65 0.65 1.25±0.1 2.1±0.1 !Features 1) A wide variety of configurations are available. (UMD5, UMD6, SMD5, SMD6) 2) Multiple diodes in one small surface mount package. 3) Diode characteristics are matched in the package. 2.8±0.2 1.6 −0.1 +0.1 0.2 −0.05 0.15±0.05 0.3 −0.05 0.15 0.3∼0.6 +0.1 +0.1 −0.06 (All leads have the same dimensions.) (All leads have the same dimensions.) ROHM : SMD5 EIAJ : SC-74A JEDEC : − IMN10 / IMN11 / IMP11 2.9±0.2 ∗Marking FMN1 : N1 FMP1 : P1 ROHM : UMD5 EIAJ : SC-88A JEDEC : SOT-353 UMN11N / UMP11N ∗Marking UMN1N : N1 UMP1N : P1 !Construction Silicon epitaxial planar 1.9±0.2 0.95 0.95 1.1 +0.2 −0.1 2.0±0.2 1.3±0.1 0.8±0.1 0.9±0.1 0.7 0.65 0.65 1.25±0.1 2.1±0.1 2.8±0.2 1.6 −0.1 +0.2 ∗ 0.3 −0.05 +0.1 0∼0.1 ∗ 0∼0.1 0.1Min. 0.15 0.3∼0.6 +0.1 −0.06 +0.1 0.2 −0.05 0.15±0.05 (All leads have the same dimensions.) (All leads have the same dimensions.) ROHM : SMD6 EIAJ : SC-74 JEDEC : SOT-457 ∗Marking IMN10 : N10 IMN11 : N11 IMP11 : P11 ROHM : UMD6 EIAJ : SC-88 JEDEC : SOT-363 ∗Marking UMN11N : N11 UMP11N : P11 !Circuit FMN1 FMP1 IMN10 SMD5 / SMD6 Package IMN11 IMP11 UMN1N UMP1N UMD5 / UMD6 Package UMN11N UMP11N 0.1Min. ∗ +0.2 0∼0.1 ∗ 0∼0.1 Diodes !Absolute maximum ratings (Ta=25°C) Type FMN1 UMN1N FMP1 UMP1N IMN10 IMN11 UMN11N IMP11 UMP11N Peak reverse voltage VRM (V) DC reverse voltage VR (V) Peak forward current IFM (mA) FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Mean rectifying current IO (mA) Power Surge Storage Junction dissipation current temperature temperature (1µs) (TOTAL) Tstg (˚C) Tj (˚C) Isurge (A) Pd (mW) 80 80 80 80 80 80 80 80 80 80 80 80 300 300 300 25 25 100 100 100 0.25 0.25 4 4 4 150/80 150/80 300 ∗1 150 ∗2 150 150 150 150 150 −55∼+150 −55∼+150 −55∼+150 −55∼+150 −55∼+150 150 ∗2 ∗1 Not to exceed 200mW per element. ∗2 Not to exceed 120mW per element. !Electrical characteristics (Ta=25°C) Forward voltage Reverse current Capacitance between terminals Reverse recovery time Type VF (V) Max. 0.9 0.9 1.2 1.2 1.2 Cond. IF (mA) 5 5 100 100 100 IR (µA) Max. 0.1 0.1 0.1 0.1 0.1 Cond. VR (V) 70 70 70 70 70 CT (pF) Max. 3.5 3.5 3.5 3.5 3.5 Cond. VR (V) 6 6 6 6 6 f (MHz) 1 1 1 1 1 trr (ns) Max. 4 4 4 4 4 Cond. VR (V) 6 6 6 6 6 IF (mA) 5 5 5 5 5 FMN1 UMN1N FMP1 UMP1N IMN10 IMN11 UMN11N IMP11 UMP11N !Electrical characteristic curves (Ta=25°C) 125 POWER DISSIPATION : Pd / PdMax. (%) 50 FORWARD CURRENT : IF (mA) 1 000 Ta=100˚C REVERSE CURRENT : IR (nA) 20 10 5 2 1 0.5 0.2 85˚C 50˚C 0˚C −30˚C 100 100 75˚C 50˚C 75 10 25˚C 0˚C −25˚C 50 1.0 Ta=25˚C 25 0.1 0 0 25 50 75 100 125 150 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE : VF (V) 0.01 0 10 20 30 40 50 AMBIENT TEMPERATURE : Ta (˚C) REVERSE VOLTAGE : VR (V) Fig.1 Power reduction curve Fig. 2 Forward current vs. forward voltage (P Type) Fig.3 Reverse current vs. reverse voltage (P Type) Diodes 50 FORWARD CURRENT : IF (mA) FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 000 Ta=100˚C 75˚C 50˚C REVERSE CURRENT : IR (nA) 20 10 5 2 1 0.5 0.2 0.1 0 85˚C 50˚C 0 ˚C −30˚C Ta=25˚C f=1MHz 4 100 10 25˚C 0˚C 1.0 2 P Type −25˚C Ta=25˚C 0.1 N Type 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE : VF (V) 0.01 0 10 20 30 40 50 0 0 2 4 6 8 10 12 14 16 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.4 Forward current vs. forward voltage (N Type) Fig.5 Reverse current vs. reverse voltage (N Type) Fig.6 Capacitance between terminals vs. reverse voltage 10 0.01µF Ta=25˚C VR=6V D.U.T. REVERSE RECOVERY TIME : trr (ns) 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 PULSE GENERATOR OUTPUT 50Ω 5kΩ 50Ω SAMPLING OSCILLOSCOPE P Ty pe INPUT N Type 8 9 10 FORWARD CURRENT : IF (mA) 100ns Fig.7 Reverse recovery time vs. forward current OUTPUT trr 0 Fig.8 Reverse recovery time (trr) measurement circuit 0.1IR IR