Data Sheet
Switching Diode
FMN1
Applications Ultra high speed switching Dimensions (Unit : mm) Land size figure (Unit : mm)
0.8MIN.
2.9±0.2
+0.1 各リードとも同寸法 same dimension Each lead has 0.3 -0.05
0.15±0.1 0.06
1.0MIN.
2.8±0.2
+0.2 -0.1
Features 1) Small mold type. (SMD5) 2) High reliability.
(1)
(2)
0.95 0.95
0~0.1
0.3~0.6
1.6
(5)
(4) 1.9±0.2
(3) 0.8±0.1 1.1±0.2 0.1
1.9
SMD5
Construction Silicon epitaxial planar
0.95
0.95
Structure
ROHM : SMD5 JEITA : SC-74A week code
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05 φ1.5±0.1 0 0.3±0.1
3.5±0.05
1.75±0.1
3.2±0.1
5.5±0.2
8.0±0.2
3.2±0.1
4.0±0.1
φ1.0MIN
0~0.5
3.2±0.1
1.35±0.1
Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Forward current (Single)
Average rectified forward current (Single)
Limits 80 80 80 25 250 80 150 55 to 150
Surge current (t=1us) Power dissipation Junction temperature Storage temperature
VRM VR IFM Io Isurge Pd Tj Tstg
Unit V V mA mA mA mW °C °C
Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current Capacitance between terminals Reverse recovery time VF IR Ct trr
Min. -
Typ. -
Max. 0.9 0.1 3.5 4
Unit V μA pF ns IF=5mA VR=70V
Conditions
VR=6V , f=1MHz VR=6V , IF=5mA , RL=50
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1/2
2011.06 - Rev.C
2.4
0.45 0.35
0.35 0.45 0.6
FMN11
Data Sheet
100
100000 Ta=75℃ 10000
Ta=150℃
Ta=125℃
10 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
Ta=125℃
10
1000 100 10 1 0.1 0.01
Ta=150℃
Ta=75℃ Ta=25℃ Ta=-25℃
Ta=25℃ Ta=-25℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1
1
0.1
0 100 200 300 400 500 600 700 800 900 1000
0.1 0 10 20 30 40 50 60 70 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 80 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
710
100 Ta=25℃ IF=5mA n=30pcs 90 80 70 60 50 40 30 20 10 0 VF DISPERSION MAP IR DISPERSION MAP AVE:7.689nA Ta=25℃ VR=70V n=10pcs
10 9 8 7 6 5 4 3 2 1 0 Ct DISPERSION MAP AVE:1.039pF Ta=25℃ VR=6V f=1MHz n=10pcs
FORWARD VOLTAGE:VF(mV)
690 680 670 660 AVE:682.7mV
20
10 Ifsm
CAPACITANCE BETWEEN TERMINALS:Ct(pF) PEAK SURGE FORWARD CURRENT:IFSM(A)
700
REVERSE CURRENT:IR(nA)
5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 4 3 2 1 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc
PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc 8.3ms
REVERSE RECOVERY TIME:trr(ns)
9 8 7 6 5 4 3 2 1 0 AVE:1.26ns
15
10
5
AVE:2.50A
0 IFSM DISPERSION MAP
100
1000
10 Rth(j-a) 9
t
ELECTROSTATIC DISCHARGE TEST ESD(KV)
Ifsm
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
8 7 6 5 4 3 2 1 0 AVE:0.57kV AVE:2.06kV
Rth(j-c) 100
10
Mounted on epoxy board IM=1mA IF=10mA
1ms
time
300us
1 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100
10 0.001
0.01
1 10 100 TIME:t(s) Rth-t CHARACTERISTICS
0.1
1000
C=200pF R=0Ω
C=100pF R=1.5kΩ
ESD DISPERSION MAP
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2/2
2011.06 - Rev.C
Notice
Notes
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http://www.rohm.com/contact/
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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