FMS3

FMS3 / FMS4 / IMT4 Transistors General purpose (dual transistors) FMS3 / FMS4 / IMT4 !Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage. !External dimensions (Units : mm) FMS3 0.95 0.95 1.9 0.95 0.95 1.9 0.8 0to0.1 0.3 (2) (3) (1) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits −120 −120 −5 −50 300 (TOTAL) 150 −55∼+150 Unit V V V mA mW ˚C ˚C 0.15 0.3to0.6 1.6 2.8 0.8 0to0.1 (2) (3) (1) (5) (4) ∗ ROHM : SMT5 EIAJ : SC-74A Each lead has same dimensions 0.3 ∗200mW per element must not be exceeded. FMS4 (4) 1.6 !Package, marking, and Packaging specifications 0.15 2.8 0.8 0to0.1 (4) (5) Part No. Package Marking Code Basic ordering unit (pieces) FMS3 SMT5 S3 T148 3000 FMS4 SMT5 S4 T148 3000 IMT4 SMT6 T4 T108 3000 0.3to0.6 ROHM : SMT5 EIAJ : SC-74A Each lead has same dimensions !Circuit diagram FMS3 FMS4 IMT4 0.15 1.6 2.8 1.1 0.3to0.6 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage ∗Transition frequency of the device. Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE fT VCE(sat) Min. −120 −120 −5 − − 180 − − Typ. − − − − − − 140 − Max. − − − −0.5 −0.5 820 − −0.5 Unit V V V µA µA − MHz V IC=−50µA IC=−1mA IE=−50µA VCB=−100V VEB=−4V Conditions VCE=−6V, IC−2mA VCE=−12V, IE=2mA, f=100MHz IC/IB=−10mA/−1mA ∗ (3) 0.95 0.95 1.9 (6) 0.3 (5) (2) (1) IMT4 1.1 2.9 1.1 2.9