FMW3T148

FMW3 / FMW4 / IMX8 Transistors General purpose (dual transistors) FMW3 / FMW4 / IMX8 (3) (2) !Absolute maximum ratings (Ta = 25°C) 1.6 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VCBO VCEO VEBO IC 120 120 5 50 V V V mA Power dissipation Junction temperature Storage temperature Pc Tj Tstg 300(TOTAL) 150 −55~+150 mW °C 0.3to0.6 ROHM : SMT5 EIAJ : SC-74A ∗ IMX8 SMT5 W4 SMT6 X4 T148 T148 T108 3000 3000 3000 (1) (2) (5) 1.6 2.8 !Circuit diagrams FMW3 FMW4 IMX8 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO 120 120 Emitter-base breakdown voltage − − − BVEBO 5 − − − Collector cutoff current ICBO − − 0.5 V V V µA Emitter cutoff current DC current transfer ratio IEBO hFE − 180 − − 0.5 820 µA − fT − 140 − MHz VCE(sat) − − 0.5 V Transition frequency Collector-emitter saturation voltage ∗ Transition frequency of the device Conditions IC=50µA IC=1mA IE=50µA VCB=100V VEB=4V VCE=6V, IC=2mA VCE=−12V, IE=2mA, f=100MHz IC/IB=10mA/1mA ∗ 0to0.1 0.3to0.6 ROHM : SMT6 EIAJ : SC-74 0.8 0.15 Code Basic ordering unit (pieces) 1.1 FMW4 SMT5 W3 (3) FMW3 (4) Part No. Package 0.95 0.95 1.9 2.9 0.3 IMX8 !Package, marking, and packaging specifications Marking Each lead has same dimensions °C (6) ∗ 200mW per element must not be exceeded. 0.8 Unit 0to0.1 Limits 1.1 2.8 Symbol 0.15 Parameter (5) (1) (4) 0.3 FMW3 FMW4 0.95 0.95 1.9 2.9 !External dimensions (Units : mm) !Features 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. Each lead has same dimensions