FMW4

FMW3 / FMW4 / IMX8 Transistors General purpose (dual transistors) FMW3 / FMW4 / IMX8 !Features 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. !External dimensions (Units : mm) 0.95 0.95 1.9 2.9 0.8 0to0.1 (1) !Absolute maximum ratings (Ta = 25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC Pc Tj Tstg 120 120 5 50 300(TOTAL) 150 −55~+150 V V V mA mW °C 1.6 2.8 0.15 Unit Parameter Symbol Limits (5) (4) FMW3 FMW4 0.3 (2) (3) 0.3to0.6 0to0.1 ∗ ROHM : SMT5 EIAJ : SC-74A Each lead has same dimensions ∗ 200mW per element must not be exceeded. °C !Package, marking, and packaging specifications Part No. Package Marking Code Basic ordering unit (pieces) FMW3 SMT5 W3 T148 3000 FMW4 SMT5 W4 T148 3000 IMX8 SMT6 X4 T108 3000 (4) 1.6 2.8 0.15 1.1 0.3to0.6 !Circuit diagrams FMW3 FMW4 IMX8 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE fT VCE(sat) Min. 120 120 5 − − 180 − − Typ. − − − − − − 140 − Max. − − − 0.5 0.5 820 − 0.5 Unit V V V µA µA − MHz V IC=50µA IC=1mA IE=50µA VCB=100V VEB=4V VCE=6V, IC=2mA VCE=−12V, IE=2mA, f=100MHz IC/IB=10mA/1mA ∗ Conditions ∗ Transition frequency of the device (3) 0.95 0.95 1.9 2.9 0.3 (5) (2) (1) IMX8 (6) 0.8 1.1