IMX8T108

IMX8 Transistors General purpose (dual transistors) IMX8 zFeatures 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. IMX8 SMT6 X8 T108 (1) (2) 1.6 0.8 0.3Min. 0~0.1 SOT-457 3000 1.1 2.8 0.15 Code Basic ordering unit (pieces) (3) (4) Part No. Package Marking (5) zPackage, marking, and packaging specifications 0.95 0.95 1.9 2.9 0.3 (6) zExternal dimensions (Unit : mm) Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 zEquivalent circuit (4) (5) (6) Tr2 (3) Tr1 (2) (1) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current VEBO IC 120 120 5 50 V V V mA Power dissipation Junction temperature Storage temperature Pc Tj Tstg 300(TOTAL) 150 −55 to +150 mW °C Parameter ∗ °C ∗ 200mW per element must not be exceeded. zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO 120 120 − − − − V V IC=50µA IC=1mA Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVEBO 5 − − − − − − 0.5 0.5 V µA µA IE=50µA hFE fT 180 − 820 − − 140 − MHz VCE(sat) − − 0.5 V DC current transfer ratio Transition frequency Collector-emitter saturation voltage ICBO IEBO Conditions VCB=100V VEB=4V VCE=6V, IC=2mA VCE=12V, IE= −2mA, f=100MHz ∗ IC/IB=10mA/1mA ∗Transition frequency of the device Rev.A 1/2 IMX8 Transistors zElectrical characteristics 50 8 20.0 17.5 6 15.0 12.5 10.0 4 7.5 5.0 2 2.5 IB=0µA 4 0 8 Ta=25°C 16 20 12 10 5 2 1 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) IC/IB=50 20 10 2 5 10 20 0.2 0.4 50 0.2 Ta=100°C 0.1 25°C −40°C 0.05 0.02 1 5 2 1 −0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage 5 10 20 50 Fig.5 Collector-emitter saturation voltage vs. collector current ( ) EMITTER INPUT CAPACITANCE : Cib(pF) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) 10 2 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) Ta=25°C f=1MHz IE=0A 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current VCE=6V Ta=25°C IC/IB=10 0.5 COLLECTOR CURRENT : IC (mA) 20 0.6 0.8 1.0 1.2 1.4 1.6 Fig.2 Ground emitter propagation characteristics 0.2 0.02 1 VCE=1V 100 BASE TO EMITTER VOLTAGE : VBE (V) Ta=25°C 0.05 3V 200 50 0.1 0 0.5 0.1 5V 500 0.2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics Ta=25°C Ta=25°C VCE=6V 20 TRANSITION FREQUENCY : fT (MHz) 22.5 DC CURRENT GAIN : hFE 25.0 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 10 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current Ta=25°C f=1MHz IC=0A 20 10 5 2 1 −0.5 1 2 5 10 20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Emitter input capacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: IMX8T108