EMZ1 / UMZ1N
/ IMZ1A
EMZ1FHA / UMZ1NFHA
/ IMZ1AFRA
Transistors
General purpose transistor
(dual transistors)
AEC-Q101 Qualified
e
N co
ew m
m
D
es en
ig de
ns d
fo
r
EMZ1 / UMZ1N
/ IMZ1A / IMZ1AFRA
EMZ1FHA
/ UMZ1NFHA
zExternal dimensions (Unit : mm)
zFeatures
1) Both a 2SA1037AKFRA
2SA1037AK chip and 2SC2412KFRA
2SC2412K chip in a
EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
(3)
0.22
(4)
(5)
(2)
(6)
0.5 0.5
1.0
1.6
EMZ1
EMZ1FHA
(1)
0.5
0.13
1.2
1.6
Each lead has same dimensions
ROHM : EMT6
2.0
1.3
(3)
(2)
(1)
1.25
0.65
(6)
(5)
0.2
(4)
UMZ1NFHA
UMZ1N
zStructure
NPN / PNP epitaxial planar silicon transistor
0.65
Abbreviated symbol : Z1
0.1Min.
(4)
Tr1
Tr2
(5)
Tr1
Tr2
IMZ1AFRA
IMZ1A
(3)
(6)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : Z1
(6)
(2)
(1)
(3)
(4)
(5)
0.3
(4)
(5)
(1)
(1)
(2)
(2)
0.95 0.95
1.9
2.9
(3)
IMZ1AFRA
IMZ1A
(6)
EMZ1FHA
/ UMZ1NFHA
EMZ1 / UMZ1N
0to0.1
0.7
0.15
zEquivalent circuit
0.9
2.1
1.6
Limits
Tr1
Tr2
VCBO
60
−60
V
Collector-emitter voltage
VCEO
50
−50
V
Emitter-base voltage
VEBO
7
−6
V
150
−150
mA
Collector current
EMZ1FHA
UMZ1NFHA
EMZ1,/ UMZ1N
Power
dissipation IMZ1AFRA
IMZ1A
IC
PC
150 (TOTAL)
300 (TOTAL)
0.8
0.15
0.3to0.6
Unit
Collector-base voltage
ot
N
Symbol
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55 to +150
˚C
0to0.1
R
Parameter
1.1
2.8
zAbsolute maximum ratings (Ta = 25°C)
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : Z1
∗1
∗2
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Rev.A
1/4
EMZ1 / UMZ1N
/ IMZ1A
EMZ1FHA / UMZ1NFHA
/ IMZ1AFRA
Transistors
zElectrical characteristics (Ta = 25°C)
Tr1 (NPN)
Parameter
Conditions
Symbol Min. Typ. Max. Unit
BVCBO
60
−
−
V
IC=50µA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
7
−
−
V
IE=50µA
Collector cutoff current
ICBO
−
−
0.1
µA
VCB=60V
Emitter cutoff current
IEBO
−
−
0.1
µA
VEB=7V
VCE (sat)
−
−
0.4
V
IC/IB=50mA/5mA
hFE
120
−
560
−
VCE=6V, IC=1mA
fT
−
180
−
Cob
−
2
3.5
e
N co
ew m
m
D
es en
ig de
ns d
fo
r
Collector-base breakdown voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
MHz VCE=12V, IE=−2mA, f=100MHz
VCB=12V, IE=0A, f=1MHz
PF
Tr2 (PNP)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
−60
−
−
V
IC=−50µA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC=−1mA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V
IE=−50µA
Collector cutoff current
ICBO
−
−
−0.1
µA
VCB=−60V
Emitter cutoff current
IEBO
−
−
−0.1
µA
VEB=−6V
VCE (sat)
−
−
−0.5
V
IC/IB=−50mA/−5mA
hFE
120
−
560
−
VCE=−6V, IC=−1mA
fT
−
140
−
MHz VCE=−12V, IE=2mA, f=100MHz
Cob
−
4
5
PF
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
VCB=−12V, IE=0A, f=1MHz
zPackaging specifications
Package
Type
Taping
Code
T2R
TR
T108
Basic ordering
unit (pieces)
8000
3000
3000
EMZ1
EMZ1FHA
UMZ1N
UMZ1NFHA
R
IMZ1A
IMZ1AFRA
10
1
25˚C
−55˚C
5
2
0.5
0.2
0.1
0
0.2
0.4
100
VCE=6V
COLLECTOR CURRENT : IC (mA)
20
Ta=100˚C
COLLECTOR CURRENT : IC (mA)
N
ot
50
0.6
0.8
1.0
1.2
1.4
1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
0.50mA
mA
0.45 A
0.40m
0.35mA
Ta=25˚C
80
0.30mA
0.25mA
60
0.20mA
0.15mA
40
0.10mA
20
0
0.05mA
IB=0A
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( I )
10
COLLECTOR CURRENT : IC (mA)
zElectrical characteristic curves
Tr1 (NPN)
30µA
Ta=25˚C
27µA
8
24µA
21µA
6
18µA
15µA
12µA
4
9µA
6µA
2
3µA
0
0
IB=0A
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( II )
Rev.A
2/4
Transistors
500
Ta=25˚C
VCE=5V
3V
1V
50
20
25˚C
200
−55˚C
100
50
20
0.5
1
2
5
10 20
10
0.2
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5
IC/IB=10
0.2
Ta=100˚C
25˚C
−55˚C
0.1
0.05
0.02
0.01
0.2
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
Ta=25˚C
f=1MHz
IE=0A
IC=0A
R
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
10
N
ot
5
Cib
2
Co
b
1
0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
2
5
10 20
50 100 200
Ta=25˚C
0.2
IC/IB=50
20
10
0.1
0.5
0.02
0.01
0.2
0.5
1
2
5
10
20
Ta=100˚C
25˚C
−55˚C
0.1
0.05
0.02
0.01
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
Ta=25˚C
VCE=6V
IC/IB=50
0.2
0.2
0.05
Fig.6 Collector-emitter saturation
voltage vs. collector current ( I )
DC current gain vs. collector
current ( II )
50 100
500
200
100
50
−0.5
−1
−2
−5
−10
−20
−50 −100
EMITTER CURRENT : IE (mA)
COLLECTOR CURRENT : IC (mA)
Fig.8 Collector-emitter saturation
voltage vs. collector current ( III )
Fig.7 Collector-emitter saturation
voltage vs. collector current ( II )
20
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
DC current gain vs. collector
current ( I )
0.5
1
COLLECTOR CURRENT : IC (mA)
BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Fig.4
0.5
TRANSITION FREQUENCY : fT (MHz)
10
0.2
0.5
e
N co
ew m
m
D
es en
ig de
ns d
fo
r
200
100
VCE=5V
Ta=100˚C
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
500
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
EMZ1 / UMZ1N
/ IMZ1A
EMZ1FHA / UMZ1NFHA
/ IMZ1AFRA
Fig.9 Gain bandwidth product vs.
emitter current
Ta=25˚C
f=32MHZ
VCB=6V
200
100
50
20
10
−0.2
−0.5
−1
−2
−5
−10
EMITTER CURRENT : IE (mA)
Fig.11 Base-collector time constant vs.
emitter current
Rev.A
3/4
EMZ1 / UMZ1N
/ IMZ1A
EMZ1FHA / UMZ1NFHA
/ IMZ1AFRA
Transistors
Tr2 (PNP)
−2
−1
−0.5
−0.2
−24.5
−17.5
−10.5
−7.0
−2
−3.5µA
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
200
100
50
−80
Ta=25˚C
−500
−450
−400
−350
−300
−0.8
−1.2
−1.6
−60
−250
−200
−150
−40
−100
−20
−50µA
IB=0
−2.0
−1
0
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.13 Grounded emitter output
characteristics ( I )
Fig.14 Grounded emitter output
characteristics ( II )
500
VCE=−5V
−3V
−1V
Ta=25˚C
−0.4
0
Ta=100˚C
25˚C
DC CURRENT GAIN : hFE
500
DC CURRENT GAIN : hFE
−14.0
−4
Fig.12 Grounded emitter propagation
characteristics
−40˚C
200
100
50
−1
Ta=25˚C
−0.5
−0.2
IC/IB=50
20
−0.1
10
−0.05
−0.2
−0.5 −1
−2
−5
−10 −20
VCE=−6V
−50 −100
−0.2
COLLECTOR CURRENT : IC (mA)
lC/lB=10
ot
−0.5
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
−0.05
−0.2
−0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
Fig.18 Collector-emitter saturation
voltage vs. collector current ( II )
−2
−5
−10 −20
−50 −100
1000
Ta=25˚C
VCE=−12V
500
200
100
50
0.5
1
2
5
10
20
50
100
EMITTER CURRENT : IE (mA)
Fig.19 Gain bandwidth product vs.
emitter current
−0.2
−0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
Fig.17 Collector-emitter saturation
voltage vs. collector current ( I )
Fig.16 DC current gain vs. collector
current ( II )
TRANSITION FREQUENCY : fT (MHz)
R
−1
−0.5 −1
COLLECTOR CURRENT : IC (mA)
Fig.15 DC current gain vs. collector
current ( I )
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
−21.0
−6
IB=0
BASE TO EMITTER VOLTAGE : VBE (V)
N
−28.0
−8
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
−0.1
−100
−31.5
COLLECTOR CURRENT : IC (mA)
−5
−35.0
Ta=25˚C
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
−10
COLLECTOR CURRENT : IC (mA)
−20
−10
VCE=−6V
Ta=100˚C
25˚C
−40˚C
e
N co
ew m
m
D
es en
ig de
ns d
fo
r
COLLECTOR CURRENT : Ic (mA)
−50
20
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cib
10
Co
b
5
2
-0.5
-1
-2
-5
-10
-20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.20 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
4/4
Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
e
N co
ew m
m
D
es en
ig de
ns d
f
or
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
ot
R
2.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
N
7.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
Precautions Regarding Application Examples and External Circuits
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
or
1.
e
N co
ew m
m
D
es en
ig de
ns d
f
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
ot
1.
R
Precaution Regarding Intellectual Property Rights
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
N
2.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
N
ot
R
e
N co
ew m
m
D
es en
ig de
ns d
f
or
3.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
