MMST2907AT146

UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A zFeatures 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A. zDimensions (Unit : mm) UMT2907A zPackage, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT3 R2F T106 SST3 R2F T116 SMT3 R2F T146 3000 3000 3000 (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 UMT2907A SST2907A MMST2907A SOT-323 SST2907A zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMT2907A, SST2907A, Collector power dissipation MMST2907A SST2907A Junction temperature Storage temperature Symbol Limits Unit VCBO VCEO −60 −60 −5 −0.6 V V V A 0.2 W 0.35 150 −55 to +150 W °C °C VEBO IC PC Tj Tstg (1) Emitter (2) Base (3) Collector ROHM : SST3 MMST2907A ∗ ∗ Mounted on a 7 x 5 x 0.6mm ceramic substrate. (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage BVCBO BVCEO −60 −60 − − BVEBO −5 − − − − − − −100 V V V − − − − −100 −100 − −0.4 − − − −1.6 −1.3 −2.6 − − − − − − − 300 − − − − − 8 MHz pF − 30 pF − 50 ns VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA − 10 ns VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA Collector cutoff current Emitter cutoff current ICBO ICES IEBO Collector-emitter saturation voltage VCE(sat) − − Base-emitter saturation voltage VBE(sat) − − 75 DC current transfer ratio Transition frequency Collector output capacitance Emitter input capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time hFE fT Cob Cib ton td tr toff tstg tf 100 100 100 50 200 − − − − − − − − nA nA V V Conditions IC= −10µA IC= −10mA IE= −10µA VCB= −50V VCB= −30V VEB= −3V IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA VCE= −10V, IC= −0.1mA VCE= −10V, IC= −1mA − VCE= −10V, IC= −10mA VCE= −10V, IC= −150mA VCE= −10V, IC= −500mA VCE= −20V, IE=50mA, f=100MHz VCB= −10V, f=100kHz VEB= −2V, f=100kHz − 40 ns VCC= −30V, VBE(OFF)= −1.5V, IC=− 150mA, IB1= −15mA − − − 100 80 30 ns ns ns VCC= −30V, IC= −150mA, IB1=IB2= −15mA VCC= −30V , IC= −150mA, IB1=IB2= −15mA VCC= −30V, IC= −150mA, IB1=IB2= −15mA Rev.B 1/4 UMT2907A / SST2907A / MMST2907A Transistors 100 COLLECTOR CURRENT : IC (mA) Ta=25˚C 600 500 400 50 300 200 100 1B=0µA 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE (V) BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) zElectrical characteristic curves 1.8 Ta=25˚C IC / IB=10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Fig.1 Grounded emitter output characteristics 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.2 Base-emitter saturation voltage vs. collector current 1000 DC CURRENT GAIN : hFE Ta=25˚C VCE=10V 100 10 0.1 1V 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.3 DC current gain vs. collector current ( I ) 1000 DC CURRENT GAIN : hFE VCE=10V Ta=125˚C Ta=25˚C 100 Ta=−55˚C 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) Rev.B 2/4 UMT2907A / SST2907A / MMST2907A Transistors 1000 AC CURRENT GAIN : hFE COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) Ta=25˚C VCE=10V f=1kHz 100 10 COLLECTOR CURRENT : IC (mA) 100 1000 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) BASE-EMITTER ON VOLTAGE : VBE(on) (V) 1.6 Ta=25˚C VCE=10V 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Cib 10 Cob 100 1000 300MHz 200MHz 10 250MHz 1 200MHz 0.1 1 Fig.8 Gain bandwidth product vs. collector current 1000 Ta=25˚C IC / IB=10 TURN ON TIME : ton (ns) CAPACITANCE (pF) Ta=25˚C f=1MHz 10 Ta=25˚C 100MHz COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics 100 10 100 1000 COLLECTOR CURRENT : IC (mA) 100 1000 Ta=25˚C VCE=10V 0 1.0 Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 AC current gain vs. collector current 1.8 0.1 COLLECTOR-EMITTER VOLTAGE : VCE(V) 1.0 0.2 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.9 Gain bandwidth product 500 Ta=25˚C VCC=30V IC / IB=10 RISE TIME : tr (ns) 10 0.1 Ta=25˚C IC / IB=10 0.3 100 VCC=30V 100 10V 10 1 0.1 10 1 10 REVERSE BIAS VOLTAGE (V) Fig.10 Input/output capacitance vs. voltage 100 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.11 Turn-on time vs.collector current 5 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.12 Rise time vs. collector current Rev.B 3/4 UMT2907A / SST2907A / MMST2907A Transistors 1000 100 10 1000 Ta=25˚C VCC=30V IC=10IB1=10IB2 FALL TIME : tf (ns) STORAGE TIME : ts (ns) Ta=25˚C VCC=30V IC=10IB1=10IB2 100 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.13 Storage time vs. collector current 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.14 Fall time vs. collector current Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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