MMST3906T146

UMT3906/SST3906/MMST3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 zDimensions (Unit : mm) zFeatures 1) BVCEO > −40V (IC= −1mA) 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. UMT3906 (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 zPackage, marking, and packaging specifications Type UMT3906 Packaging type UMT3 SST3 Marking R2A R2A R2A Code T106 T116 T146 Basic ordering unit (pieces) 3000 3000 3000 SOT-323 SST3906 SST3906 MMST3906 SMT3 (1) Emitter (2) Base (3) Collector ROHM : SST3 MMST3906 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −40 V Collector-emitter voltage VCEO −40 V Emitter-base voltage VEBO −5 V IO −0.2 A Collector current UMT3906 SST3906,MMST3906 Collector Power dissipation Pd SST3906,MMST3906 6.2 W W °C °C Junction temperature Tj 0.35 150 Storage temperature Tstg −55 to +150 ∗ 5 0.6mm ceramic board. + + ∗ When mounted on a 7 (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −40 − − V IC= −10µA Collector-emitter breakdown voltage BVCEO −40 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −10µA Collector cutoff current ICES − − −50 nA VCB= −30V Emitter cutoff current IEBO − − −50 nA VEB= −3V − − −0.25 − − −0.4 −0.65 − −0.85 − − −0.95 60 − − Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) V V Conditions IC/IB= −10mA/ −1mA IC/IB= −50mA/ −5mA IC/IB= −10mA/ −1mA IC/IB= −50mA/ −5mA VCE= −1V, IC= −0.1mA VCE= −1V, IC= −1mA 80 − − 100 − 300 60 − − 30 − − fT 250 − − MHz Collector output capacitance Cob − − 4.5 pF VCB= −10V, f=100kHz, IE=0A Emitter input capacitance VCB= −0.5V, f=100kHz, IC=0A DC current transfer ratio Transition frequency hFE − VCE= −1V, IC= −10mA VCE= −1V, IC= −50mA VCE= −1V, IC= −100mA VCE= −20V, IE=10mA, f=100MHz Cib − − 10 pF Delay time td − − 35 ns VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA Rise time tr − − 35 ns VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA tstg − − 225 ns VCC= −3V, IC= −10mA, IB1= −IB2= −1mA tf − − 75 ns VCC= −3V, IC= −10mA, IB1= −IB2= −1mA Storage tiem Fall time Rev.B 1/4 UMT3906/SST3906/MMST3906 Transistors IC-COLLECTOR CURRENT (mA) 10 Ta=25°C 50 45 40 8 35 30 6 25 20 4 15 10 2 5 IB=0µA 10 0 0 20 VCE-COLLECTOR-EMITTER VOLTAGE (V) VCE(sat)COLLECTOR EMITTER SATURATION VOLTAGE (V) zElectrical characteristics curves IC / IB=10 Ta=25°C 0.3 0.2 0.1 0 0.1 1.0 10 100 IC EMITTER COLLECTOR CURRENT (mA) Fig.1 Grounded emitter output characteristics Fig.2 Collector-emitter saturation voltage vs. collector current 500 hFE-DC CURRENT GAIN Ta=25°C VCE=5V 100 3V 1V 10 5 0.1 1.0 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.3 DC current gain vs.collector current ( Ι ) 500 hFE-DC CURRENT GAIN VCE=5V Ta=125°C Ta=25°C 100 Ta= −55°C 10 5 0.1 1.0 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.4 DC current gain vs. collector current ( ΙΙ ) Rev.B 2/4 UMT3906/SST3906/MMST3906 500 VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) Transistors hFE-AC CURRENT GAIN Ta=25°C VCE=5V f=1kHz 100 10 5 0.01 0.1 1.0 IC-COLLECTOR CURRENT (mA) 10 100 1.8 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1.2 Ta=25°C IC / IB=10 100 1.0 0.8 0.6 0.4 1000 tr-RISE TIME (ns) 1.4 1000 ton-TURN ON TIME (ns) 100 Ta=25°C IC / =IB=10 100 15V 40V VCC=3V 10 10 0.2 0 0.1 1 1.0 1.0 10 100 IC-COLLECTOR CURRENT (mA) Fig.7 Grounded emitter propagation characteristics IC=101B1=101B2 Ta=25°C 40V 100 Fig.8 Turn-on time vs. collector current 1000 15V Fig.9 Rise time vs. collector current 50 100 VCC=3V 10 100 IC-COLLECTOR CURRENT (mA) f=1MHz Ta=25°C IC=101B1=101B2 Ta=25°C tf-FALL TIME (ns) tS-STORAGE TIME (ns) 1000 1 1.0 10 100 IC-COLLECTOR CURRENT (mA) CAPACITANCE (pF) VBE(ON)-BASE EMITTER ON VOLTAGE (V) VCE=5V Ta=25°C 1.6 1.0 10 IC-COLLECTOR CURRENT (mA) Fig.6 Base-emitter saturation voltage vs. collector current Fig.5 AC current gain vs. collector current 1.8 IC / IB=10 Ta=25°C 1.6 10 Cib Cob 1 10 1.0 10 100 IC-COLLECTOR CURRENT (mA) Fig.10 Storage time vs. collector current 10 1.0 10 100 IC-COLLECTOR CURRENT (mA) Fig.11 Fall time vs. collector current 0.5 0.1 1 10 REVERSE BIAS VOLTAGE (V) Fig.12 100 Input / output capacitance vs. voltage Rev.B 3/4 UMT3906/SST3906/MMST3906 300MHz 1.0 200MHz 0.1 0.1 100MHz 1 10 100 IC-COLLECTOR CURRENT (mA) 100 1 NF-NOISE FIGURE (dB) 10 8 6 4 2 1k f-FREQUENCY (Hz) 10k VCB=25V 100n 10n 1n 0.1n 0 25 50 75 100 125 150 TA-AMBIENT TEMPERATURE (°C) 10k NF =1 B B 2d B RS-SOURCE RESISTANCE (Ω) Ta=25°C VCE=5V f=10Hz 8d 0.1 1 IC-COLLECTOR CURRENT (mA) 100k 3d dB B 100 0.01 100 B 5d RS-SOURCE RESISTANCE (Ω) B Noise characteristics ( ΙΙ ) =1 1k NF = 5d 3dB B 8d B B Fig.18 10 NF 3d 8d 0.1 1 IC-COLLECTOR CURRENT (mA) 1k B 5d B 5d B 8d dB 12 100 0.01 Ta=25°C VCE=5V f=10kHz 8d B dB dB B =1 3d =1 NF 1k 10k NF dB B =1 Ta=25°C VCE=5V f=30Hz 12 dB 3d NF 5d B 10k 5d RS-SOURCE RESISTANCE (Ω) B B 1 10 IC-COLLECTOR CURRENT (mA) Fig.17 Noise characteristics ( Ι ) 100k 8d hre 1µ 100k 12 3d hfe 1 10µ Fig.16 Noise vs. collector current dB hoe Fig.15 h parameter vs. collector current Fig.14 Gain bandwidth product vs. collector current Ta=25°C VCE=5V IC=100µA RS=10kΩ 100k VCE=5V f=270Hz Ta=25°C 10 0.1 0.1 10 100 IC-COLLECTOR CURRENT (mA) 12 100 IC=1mA hie=4.08kΩ hfe=146 hre=2.20 10−4 hoe=34.3µS hie 10 Fig.13 Gain bandwidth product 0 10 100 VCE=5V Ta=25°C h-PARAMETER NORMALIZED TO 1mA 400MHz 10 1000 ICBO-COLLECTOR CUTOFF CURRENT (A) Ta=25°C 200MHz 100MHz 300MHz + VCE COLLECTOR-EMITTER VOLTAGE (V) 100 f T-CORRENT GAIN-BANDWIDTH PRODUCT (MHz) Transistors 10 Fig.19 Noise characteristics (ΙΙΙ) 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 ΙΛ Fig.20 Noise characteristics ( ) Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0