MMST4401

UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) UMT4401 / SST4401 / MMST4401 / 2N4401 !External dimensions (Units : mm) !Features 1) BVCEO>40V (IC=1mA) 2) Complements the UMT4403 / SST4403 / MMST4403 / PN4403. UMT4401 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.2 0.9±0.1 0.7±0.1 1.25±0.1 2.1±0.1 0~0.1 (3) ROHM : UMT3 EIAJ : SC-70 0.3+0.1 0.15±0.05 −0 All terminals have the same dimensions 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) !Package, marking, and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT4401 UMT3 R2X T106 3000 SST4401 SST3 R2X T116 3000 MMST4401 SMT3 R2X T146 3000 2N4401 TO-92 T93 3000 SST4401 0.95 +0.2 −0.1 0.45±0.1 2.4±0.2 1.3+0.2 −0.1 0~0.1 0.2Min. (3) All terminals have the same dimensions +0.1 0.1~0.4 (1) Emitter (2) Base (3) Collector ROHM : SST3 0.4 +0.1 −0.05 0.15 −0.06 (1) Emitter (2) Base (3) Collector MMST4401 2.9±0.2 1.9±0.2 0.95 0.95 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 60 40 6 0.6 0.2 W 0.625 150 -55~+150 ˚C ˚C (12.7Min.) 1.1+0.2 −0.1 0.8±0.1 Junction temperature Storage temperature Tj Tstg 0.5±0.1. (1) (2) 5 (3) 2.5Min. 2N4401 4.8±0.2 Collector power dissipation UMT4401 SST4401 MMST4401 ROHM : SMT3 EIAJ : SC-59 0.4 +0.1 −0.05 4.8±0.2 0.15 −0.06 PC 2N4401 3.7±0.2 0.3~0.6 V V V A (3) All terminals have the same +0.1 dimensions 1.6+0.2 −0.1 2.8±0.2 Unit (1) (2) 0~0.1 (1) Emitter (2) Base (3) Collector ROHM : TO-92 EIAJ : SC-43 +0.3 2.5 −0.1 0.45±0.1 2.3 (1) Emitter (2) Base (3) Collector !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min. 60 40 6 20 40 DC current transfer ratio hFE 80 100 Transition frequency Collector output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time fT Cob Cib td tr tstg tf 40 250 Typ. Max. 0.1 0.1 0.4 0.75 0.95 1.2 300 6.5 30 15 20 225 30 MHz pF pF ns ns ns ns Unit V V V µA µA V V IC=100µA IC=1mA IE=100µA VCB=35V VEB=5V IC/IB=150mA/15mA IC/IB=500mA/50mA IC/IB=150mA/15mA IC/IB=500mA/50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IE=-20mA, f=100MHz VCB=10V, f=100kHz VEB=0.5V, f=100kHz VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=-IB2=15mA VCC=30V, IC=150mA, IB1=-IB2=15mA Conditions UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors !Electrical characteristic curves 100 COLLECTOR CURRENT : Ic(mA) Ta=25°C 600 500 400 1000 Ta=25°C DC CURRENT GAIN : hFE VCE=10V 50 300 200 100 100 1V 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) IB=0µA 10 0.1 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.1 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current(Ι) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) Ta=25°C IC / IB=10 0.3 1000 VCE=10V DC CURRENT GAIN : hFE Ta=125°C 0.2 25°C −55°C 100 0.1 0 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 0.1 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.2 Collector-emitter saturation voltage vs. collector current Fig.4 DC current gain vs. collector current(ΙΙ) BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 1000 1.8 1.6 Ta=25°C VCE=10V f=1kHz Ta=25°C IC / IB=10 AC CURRENT GAIN : hFE 1.2 100 0.8 0.4 10 0.1 0 1.0 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.5 AC current gain vs. collector current Fig.6 Base-emitter saturation voltage vs. collector current UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors BASE EMITTER VOLTAGE : VBE(ON)(V) 1.8 1.6 Ta=25°C VCE=10V 1000 Ta=25°C IC / IB=10 500 Ta=25°C VCC=30V IC / IB=10 TURN ON TIME : ton(ns) 1.2 100 VCC=30V 10V 0.8 0.4 RISE TIME : tr(ns) 100 10 0 1 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 5 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.7 Grounded emitter propagation characteristics Fig.8 Turn-on time vs. collector current Fig.9 Rise time vs. collector current 1000 Ta=25°C VCC=30V IC=10IB1=10IB2 1000 Ta=25°C VCC=30V IC=10IB1=10IB2 100 Ta=25°C f=1MHz STORAGE TIME : ts(ns) CAPACITANCE(pF) FALL TIME : tf(ns) Cib 100 100 10 Cob 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.10 Storage time vs. collector current Fig.11 Fall time vs. collector current Fig.12 Input / output capacitance vs. voltage 100 COLLECTOR-EMITTER VOLTAGE : VCE(V) 100MHz 250MHz 300MHz 200MHz 10 1 250MHz 0.1 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25°C 1000 Ta=25°C VCE=10V 100 1 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.13 Gain bandwidth product Fig.14 Gain bandwidth product vs. collector current