MMST4401T146

SST4401 / MMST4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 zDimensions (Unit : mm) zFeatures 1) BVCEO>40V (IC=1mA) 2) Complements the SST4403 / MMST4403. SST4401 SOT-23 zPackage, marking, and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) SST4401 SST3 R2X T116 3000 MMST4401 SMT3 R2X T146 3000 MMST4401 SOT-346 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation (1) Emitter (2) Base (3) Collector ROHM : SST3 Symbol Limits Unit VCBO VCEO 60 40 6 0.6 V V V A 0.2 W VEBO IC (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 PC 0.35 Tj Junction temperature Tstg Storage temperature ∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE W 150 −55 to +150 ˚C ˚C + + zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol BVEBO Min. 60 40 6 ICBO − IEBO − − − − − − − − 0.4 − − 0.75 − − 0.95 − 20 − 1.2 − − 40 − − BVCBO BVCEO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio Transition frequency Collector output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time hFE Typ. Max. − − − 0.1 0.1 80 − 100 − − 300 40 − − Unit Conditions V V IC=100µA V µA IE=100µA VCB=35V VEB=5V µA V V − IC=1mA IC/IB=150mA/15mA IC/IB=500mA/50mA IC/IB=150mA/15mA IC/IB=500mA/50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IE= −20mA, f=100MHz VCB=10V, f=100kHz fT 250 Cob Cib − − − − 6.5 MHz pF − − 30 pF VEB=0.5V, f=100kHz td − − 15 ns tr tstg tf − − 20 ns VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA − − 225 ns − − 30 ns VCC=30V, IC=150mA, IB1=-IB2=15mA VCC=30V, IC=150mA, IB1=-IB2=15mA Rev.B 1/3 SST4401 / MMST4401 Transistors zElectrical characteristic curves 100 COLLECTOR CURRENT : Ic(mA) Ta=25°C 1000 600 DC CURRENT GAIN : hFE 500 400 50 Ta=25°C VCE=10V 100 300 200 1V 100 IB=0µA 10 0.1 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.3 DC current gain vs. collector current(Ι) Fig.1 Grounded emitter output characteristics COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) 1.0 1000 Ta=25°C IC / IB=10 VCE=10V DC CURRENT GAIN : hFE 0.3 25°C 100 0.1 0 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 −55°C 10 0.1 Fig.2 Collector-emitter saturation voltage vs. collector current 1.0 AC CURRENT GAIN : hFE Ta=25°C VCE=10V f=1kHz 100 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.4 DC current gain vs. collector current(ΙΙ) 1000 10 0.1 10 COLLECTOR CURRENT : Ic(mA) 100 Fig.5 AC current gain vs. collector current 1000 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 0.2 Ta=125°C 1.8 1.6 Ta=25°C IC / IB=10 1.2 0.8 0.4 0 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.6 Base-emitter saturation voltage vs. collector current Rev.B 2/3 SST4401 / MMST4401 1.6 1000 1.2 0.4 Ta=25°C VCC=30V IC / IB=10 100 100 0.8 VCC=30V 10V 10 1 10 100 COLLECTOR CURRENT : Ic(mA) 10 1.0 1000 Fig.7 Grounded emitter propagation characteristics 1000 100 Fig.8 Turn-on time vs. collector current 1000 10 100 COLLECTOR CURRENT : Ic(mA) 10 1.0 1000 100MHz 250MHz 300MHz 200MHz 10 1000 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25°C 1000 1000 Fig.9 Rise time vs. collector current Ta=25°C f=1MHz Cib Cob 10 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.12 Input / output capacitance vs. voltage Fig.11 Fall time vs. collector current Fig.10 Storage time vs. collector current 100 10 100 COLLECTOR CURRENT : Ic(mA) 10 100 COLLECTOR CURRENT : Ic(mA) 100 Ta=25°C VCC=30V IC=10IB1=10IB2 100 10 1.0 5 1.0 1000 FALL TIME : tf(ns) STORAGE TIME : ts(ns) Ta=25°C VCC=30V IC=10IB1=10IB2 10 100 COLLECTOR CURRENT : Ic(mA) CAPACITANCE(pF) 0 COLLECTOR-EMITTER VOLTAGE : VCE(V) 500 Ta=25°C IC / IB=10 RISE TIME : tr(ns) Ta=25°C VCE=10V 1.8 TURN ON TIME : ton(ns) BASE EMITTER VOLTAGE : VBE(ON)(V) Transistors Ta=25°C VCE=10V 100 1 250MHz 0.1 1 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.13 Gain bandwidth product 10 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.14 Gain bandwidth product vs. collector current Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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