MMST4403T146

SST4403 / MMST4403 Transistors PNP Medium Power Transistor (Switching) SST4403 / MMST4403 zDimensions (Unit : mm) zFeatures 1) BVCEO = −40V (Min.) ; at IC= −1mA 2) Complements the SST4401 / MMST4401 SST4403 SOT-23 (1) Emitter (2) Base (3) Collector zPackage, marking, and packaging specifications ROHM : SST3 Part No. Packaging type Marking Code Basic ordering unit (pieces) SST4403 SST3 R2T T116 3000 MMST4403 SMT3 R2T T146 3000 MMST4403 SOT-346 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VCBO VCEO −40 −40 −6 −0.6 V V 0.2 W Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation VEBO IC (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 V A PC 0.35 Tj Junction temperature Tstg Storage temperature ∗ Mounted on a 7+ 5+ 0.6mm CERAMIC SUBSTRATE W ˚C ˚C 150 −55 to +150 zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol BVCBO Min. Typ. −40 BVCEO −40 BVEBO −5 ICBO − IEBO − − − − − − − − −0.4 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio hFE Max. − − − −0.1 Unit −0.1 µA − − −0.75 −0.75 − −0.95 − 30 − −1.3 − − 60 − − 100 − 100 − − 300 20 − − − Conditions V V V IC= −100µA IC= −1mA µA VCB= −35V V V − IE= −100µA VEB= −5V IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA VCE= −1V, IC= −0.1mA VCE= −1V, IC= −1mA VCE= −1V, IC= −10mA VCE= −1V, IC= −150mA VCE= −2V, IC= −500mA VCE= −10V, IE=20mA, f=100MHz Transition frequency Collector output capacitance fT 200 Cob − − − 8.5 MHz pF Emitter input capacitance Cib − − 30 pF td tr − − 15 ns VEB= −0.5V, f=100kHz VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA − − 20 ns VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA tstg tf − − 225 ns − − 30 ns VCC= −30V, IC= −150mA, IB1= −IB2= −15mA VCC= −30V, IC= −150mA, IB1= −IB2= −15mA Delay time Rise time Storage time Fall time VCB= −10V, f=100kHz Rev.C 1/3 SST4403 / MMST4403 Transistors zElectrical characteristic curves 100 1000 500 400 50 VCE=10V 100 300 200 1V 100 1B=0µA 10 0.1 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE (V) 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 1.8 VCE=10V Ta=25˚C IC / IB=10 DC CURRENT GAIN : hFE 1.6 1.4 1.2 1.0 1000 Fig.3 DC current gain vs. collector current ( I ) Fig.1 Grounded emitter output characteristics Ta=125˚C Ta=25˚C 100 0.8 0.6 0.4 Ta= −55˚C 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) 10 0.1 1.0 1000 AC CURRENT GAIN : hFE Ta=25˚C VCE=10V f=1kHz 100 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) Fig.2 Base-emitter saturation voltage vs. collector current 10 0.1 10 COLLECTOR CURRENT : IC (mA) 100 Fig.5 AC current gain vs. collector current 1000 COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) Ta=25˚C 600 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Ta=25˚C Ta=25˚C IC / IB=10 0.3 0.2 0.1 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Rev.C 2/3 SST4403 / MMST4403 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 100 Cib 10 Cob 100 1000 Ta=25˚C 100MHz 300MHz 200MHz 10 250MHz 1 200MHz 0.1 1 COLLECTOR CURRENT : IC (mA) Fig.8 Gain bandwidth product vs. collector current 1000 VCC=30V 100 10V 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.9 Gain bandwidth product 500 Ta=25˚C IC / IB=10 TURN ON TIME : ton (ns) Ta=25˚C f=1MHz 10 COLLECTOR-EMITTER VOLTAGE : VCE(V) 1.4 Ta=25˚C VCE=10V Ta=25˚C VCC=30V IC / IB=10 RISE TIME : tr (ns) Ta=25˚C VCE=10V 1.6 Fig.7 Grounded emitter propagation characteristics CAPACITANCE (pF) 100 1000 1.8 CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) BASE-EMITTER ON VOLTAGE : VBE(on) (V) Transistors 100 10 1 0.1 10 1 10 REVERSE BIAS VOLTAGE (V) 100 1 100 10 1000 5 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.12 Rise time vs. collector current Ta=25˚C VCC=30V IC=10IB1=10IB2 FALL TIME : tf (ns) STORAGE TIME : ts (ns) Ta=25˚C VCC=30V IC=10IB1=10IB2 1000 Fig.11 Turn-on time vs.collector current Fig.10 Input /output capacitance vs. voltage 1000 10 100 COLLECTOR CURRENT : IC (mA) 100 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.13 Storage time vs. collector current 10 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.14 Fall time vs. collector current Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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