SSTA06 / MMSTA06
Transistors
NPN General Purpose Transistor
SSTA06 / MMSTA06
Features 1) BVCEO < 80V ( IC=1mA) 2) Complements the SSTA56 / MMSTA56. Dimensions (Unit : mm)
SSTA06
Package, marking and packaging specifications
Part No. Packaging type Mark Code Basic ordering unit (pieces) SSTA06 SST3 R1G T116 3000 MMSTA06 SMT3 R1G T146 3000
ROHM : SST3 (1) Emitter (2) Base (3) Collector
MMSTA06
ROHM : SMT3 EIAJ : SC-59
(1) Emitter (2) Base (3) Collector
Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
∗ Mounted on 7 x 5 x 0.6mm ceramic substrate.
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 80 80 4 0.5 0.2 0.35 150 −55 to +150
Unit V V V A W W∗ °C °C
Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat) VBE(ON) hFE fT Min. 80 80 4 − − − − 100 100 100 Typ. − − − − − − − − − − Max. − − − 0.1 1 0.25 1.2 − − − Unit V V V µA V V − MHz IC=100µA IC=1mA IE=100µA VCB=80V VCE=60V IC/IB=100mA/10mA VCE/IB=1V/100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IE= −10mA, f=100MHz Conditions
Rev.B
1/3
SSTA06 / MMSTA06
Transistors
Electrical characteristics curves
100
COLLECTOR CURRENT : IC (mA)
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)
Ta=25˚C 500µA
450µA 400µA 350µA 300µA 250µA
Ta=25˚C IC / IB=10 0.3
80
60
0.2
40
200µA 150µA
20
100µA 50µA
0.1
Ta=125˚C 25˚C
IB=0µA 0 0 5.0 1.0 2.0 3.0 4.0 COLLECTOR-EMITTER VOLTAGE : VCE (V)
0
−40˚C 1 10 100 1000 COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter output characteristics
Fig.2 Collector-emitter saturation voltage vs. collector current
1000
Ta=25˚C
DC CURRENT GAIN : hFE
5V VCE=10V
100
3V 1V
10 0.1
1.0
10 100 COLLECTOR CURRENT : IC (mA)
1000
Fig.3 DC current gain vs. collector current ( I )
Ta=25˚C VCE=5V
Ta=125˚C 25˚C −40˚C
ASE EMITTER SATURATION VOLTAGEV : BE(sat) (V)
1000
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 125˚C Ta=−40˚C 25˚C Ta=25˚C IC / IB=10
DC CURRENT GAIN : hFE
100
10 0.1
1.0
10 COLLECTOR CURRENT IC : (mA)
100
1000
Fig.4 DC current gain vs. collector current ( II )
Fig.5 Base-emitter saturation voltage vs. collector current
Rev.B
2/3
SSTA06 / MMSTA06
Transistors
1000
1.8
BASE EMITTER VOLTAGE : VBE(ON) (V)
100
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 Ta=−40˚C 25˚C 125˚C
Ta=25˚C VCE=5V
CAPACITANCE (pF)
Cib
10
Cob
CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)
Ta=25˚C f=1MHz
Ta=25˚C VCE=5V
100
10 100 1000 COLLECTOR CURRENT : IC (mA)
0.5
1 2 5 10 20 REVERSE BIAS VOLTAGE (V)
50
10
1
10 100 1000 COLLECTOR CURRENT : IC (mA)
Fig.6 Grounded emitter propagation characteristics
Fig.7 Input / output capacitance vs. voltage
Fig.8 Gain bandwidth product vs. collector current
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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