SSTA06 / MMSTA06
Transistors
NPN General Purpose Transistor
or
SSTA06 / MMSTA06
zDimensions (Unit : mm)
zFeatures
1) BVCEO < 80V ( IC=1mA)
2) Complements the SSTA56 / MMSTA56.
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SSTA06
zPackage, marking and packaging specifications
Part No.
SSTA06
MMSTA06
Packaging type
SST3
R1G
T116
SMT3
R1G
T146
3000
3000
Mark
Code
Basic ordering unit (pieces)
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
MMSTA06
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
R
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
VCEO
80
80
4
0.5
V
V
V
A
0.2
W
VEBO
IC
PC
Tj
Tstg
W∗
°C
°C
0.35
150
−55 to +150
N
ot
∗ Mounted on 7 x 5 x 0.6mm ceramic substrate.
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Parameter
BVCBO
BVCEO
80
80
−
−
−
−
V
V
IC=100µA
IC=1mA
Emitter-base breakdown voltage
BVEBO
ICBO
4
−
−
−
−
−
−
0.1
1
V
IE=100µA
VCB=80V
−
−
0.25
V
IC/IB=100mA/10mA
VCE/IB=1V/100mA
VCE=1V, IC=10mA
Collector cutoff current
Collector-emitter saturation voltage
ICEO
VCE(sat)
Base-emitter saturation voltage
µA
VBE(ON)
−
−
1.2
V
DC current transfer ratio
hFE
100
100
−
−
−
−
Transition frequency
fT
100
−
MHz
−
−
Conditions
VCE=60V
VCE=1V, IC=100mA
VCE=2V, IE= −10mA, f=100MHz
Rev.B
1/3
SSTA06 / MMSTA06
Transistors
450µA
400µA
80
350µA
300µA
60
250µA
200µA
40
150µA
100µA
20
50µA
IB=0µA
0
0
5.0
1.0
2.0
3.0
4.0
COLLECTOR-EMITTER VOLTAGE : VCE (V)
DC CURRENT GAIN : hFE
0.2
Ta=125˚C
0.1
25˚C
0
−40˚C
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Fig.1 Grounded emitter output
characteristics
1000
Ta=25˚C
IC / IB=10
0.3
or
Ta=25˚C 500µA
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COLLECTOR CURRENT : IC (mA)
100
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristics curves
Ta=25˚C
5V
VCE=10V
100
3V
1V
10
0.1
1.0
10
100
COLLECTOR CURRENT : IC (mA)
1000
Ta=25˚C
VCE=5V
DC CURRENT GAIN : hFE
R
1000
25˚C
−40˚C
N
ot
100
Ta=125˚C
10
0.1
1.0
10
COLLECTOR CURRENT IC : (mA)
100
Fig.4 DC current gain vs. collector current ( II )
1000
ASE EMITTER SATURATION VOLTAGEV : BE(sat) (V)
Fig.3 DC current gain vs. collector current ( I )
1.8
Ta=25˚C
IC / IB=10
1.6
1.4
1.2
1.0
Ta=−40˚C
0.8
25˚C
0.6
125˚C
0.4
0.2
0
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation
voltage vs. collector current
Rev.B
2/3
SSTA06 / MMSTA06
Transistors
1.2
1.0
Ta=−40˚C
0.8
25˚C
0.6
125˚C
0.4
0.2
0
1
CAPACITANCE (pF)
1.4
Cob
10
Ta=25˚C
VCE=5V
or
Cib
Ta=25˚C
f=1MHz
CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)
Ta=25˚C
VCE=5V
1.6
100
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BASE EMITTER VOLTAGE : VBE(ON) (V)
1000
100
1.8
10
100
1000
COLLECTOR CURRENT : IC (mA)
1
2
5
10
20
REVERSE BIAS VOLTAGE (V)
50
Fig.7 Input / output capacitance
vs. voltage
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Gain bandwidth product
vs. collector current
N
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Fig.6 Grounded emitter propagation
characteristics
0.5
Rev.B
3/3
Appendix
Notes
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or
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
N
ot
R
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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