MP6K13

Data Sheet 4V Drive Nch + Nch MOSFET MP6K13  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive).  Dimensions (Unit : mm) MPT6 (Duel) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Type MP6K13 Package Code Basic ordering unit (pieces) Taping TR 1000   Inner circuit (6) (5) ∗1 (4) ∗2 ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 6.0 Unit V V A A A A (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 12 1.6 12 *1 *2 2.0 W / TOTAL 1.4 W / ELEMENT 150 C 55 to 150 C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A MP6K13  Electrical characteristics (Ta = 25 C) Parameter Gatesource leakage Drainsource breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drainsource onstate resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turnon delay time Rise time Turnoff delay time Fall time Total gate charge Gatesource charge Gatedrain charge *Pulsed 　 Data Sheet Symbol IGSS V (BR)DSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min.  30  1.0    3.5           Typ.     22 30 35  350 160 65 8 16 30 7 5.0 1.4 1.9 Max. 10  1 2.5 31 42 49            Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=6.0A, VGS=10V m ID=6.0A, VGS=4.5V ID=6.0A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=6.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.0A, VDD 15V VGS=10V RL=5.0 RG=10 ID=6.0A, VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min.  Typ.  Max. 1.2 Unit V Conditions Is=6.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A MP6K13 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 6 Ta=25°C Pulsed 5 DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 6 Ta=25°C Pulsed 5 DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V 4 4 3 VGS= 3.0V 2 3 VGS= 2.5V 2 1 VGS= 2.5V 1 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical Transfer Characteristics 10 VDS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed VGS= 4.0V VGS= 4.5V VGS= 10V 100 DRAIN CURRENT : ID[A] 1 0.1 . 10 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VGS= 4.5V Pulsed 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 10 1 0.1 1 DRAIN-CURRENT : ID[A] 10 1 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A MP6K13 　 Fig.8 Forward Transfer Admittance vs. Drain Current 10 VGS= 4.0V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VDS= 10V Pulsed Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 1 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 1 DRAIN-CURRENT : ID[A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] 100 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed 80 ID= 6.0A ID= 3.0A 1 60 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 40 20 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics 1000 tf SWITCHING TIME : t [ns] td(off) 100 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] 8 6 td(on) 10 4 Ta=25°C VDD= 15V ID= 6.0A RG=10Ω Pulsed 0 2 4 6 8 10 2 tr 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A MP6K13 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 100 Operation in this area is limited by RDS(ON) (VGS=10V) DRAIN CURRENT : ID (A) 10000 Coss CAPACITANCE : C [pF] 1000 Ciss 10 PW =100us 1 PW =1ms PW = 10ms Crss 100 0.1 Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] 0.01 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 1 10 DC operation 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25°C Single Pulse : 1Unit NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A MP6K13  Measurement circuits 　 Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A