MP6K14

Data Sheet 4V Drive Nch + Nch MOSFET MP6K14  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive).  Dimensions (Unit : mm) MPT6 (Duel) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Type MP6K14 Package Code Basic ordering unit (pieces) Taping TCR 1000   Inner circuit (6) (5) ∗1 (4) ∗2 ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 8.0 Unit V V A A A A (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 18 1.6 18 *1 *2 2.0 W / TOTAL 1.4 W / ELEMENT 150 C 55 to 150 C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A MP6K14  Electrical characteristics (Ta = 25 C) Parameter Gatesource leakage Drainsource breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drainsource onstate resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turnon delay time Rise time Turnoff delay time Fall time Total gate charge Gatesource charge Gatedrain charge *Pulsed 　 Data Sheet Symbol IGSS V (BR)DSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min.  30  1.0    4.5           Typ.     18 21 23  470 170 80 8 30 39 9 7.3 1.5 2.9 Max. 10  1 2.5 25 29 32            Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=8.0A, VGS=10V m ID=8.0A, VGS=4.5V ID=8.0A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=8.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.0A, VDD 15V VGS=10V RL=3.75 RG=10 ID=8.0A, VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min.  Typ.  Max. 1.2 Unit V Conditions Is=8.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A MP6K14 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 8 VGS=3.0V 7 6 Drain Current : ID [A] 5 4 3 2 VGS=2.5V 1 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] VGS=10.0V VGS=4.5V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 8 7 6 Drain Current : ID [A] VGS=10.0V VGS=4.5V VGS=4.0V 5 VGS=3.0V 4 3 2 1 VGS=2.0V 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] VGS=2.8V VGS=2.5V Ta=25°C Pulsed VGS=4.0V VGS=2.8V Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 VGS=4.0V VGS=4.5V VGS=10V 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A MP6K14 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 Forward Transfer Admittance Yfs [S] 10 Drain Currnt : ID [A] 100 VDS=10V pulsed Fig.8 Typical Transfer Characteristics 1 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 Ta=25°C Pulsed 40 ID=4.0A 10 Source Current : Is [A] 30 ID=8.0A 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 20 0.1 10 0.01 0.0 0.5 1.0 1.5 2.0 0 0 2 4 6 8 10 Source-Drain Voltage : VSD [V] Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 1000 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 10 Ta=25°C VDD=15V ID=8A Pulsed Fig.12 Dynamic Input Characteristics tf 100 Switching Time : t [ns] 8 Gate-Source Voltage : VGS [V] 6 td(on) 10 4 2 tr 1 0.01 0.1 1 Drain Current : ID [A] 10 100 0 0 5 10 15 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A MP6K14 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V Coss 1000 Drain Current : ID [ A ] 10 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) （ VGS = 10V ） PW = 100μs Capacitance : C [pF] 1 PW = 1ms PW = 10ms Ciss 100 Crss 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) DC Operation 10 0.01 0.1 1 10 100 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 0.001 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.0001 0.0001 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A MP6K14  Measurement circuits 　 Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A