MP6K31

4V Drive Nch + Nch MOSFET MP6K31  Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (MPT6). 3) Low voltage drive. (4V)  Dimensions (Unit : mm) MPT6 (Dual) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Type MP6K31 Package Code Basic ordering unit (pieces) Taping TR 1000 ○  Inner circuit (6) (5) (4) (6) (5) (4) (1) (2) (3)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. (1) (2) (3) Symbol VDSS VGSS Limits 60 20 2 Unit V V A A A A ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 8 1.2 8 *1 *2 2.0 W / TOTAL 1.4 W / ELEMENT 150 C 55 to +150 C www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/6 2010.09 - Rev.A MP6K31  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 60 1.0 1.4 - Typ. 210 240 255 110 28 12 6 10 20 9 2.0 0.8 0.4 Max. 10 1 2.5 290 330 350 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=2A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=2A, VGS=4.5V ID=2A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=2A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1A, VDD 30V VGS=10V RL=30 RG=10 ID=2A, VDD 30V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=1.2A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/6 2010.09 - Rev.A MP6K31  Electrical characteristic curves (Ta = 25 C) Typical Output Characteristics (Ⅰ) 2 VGS=10.0V VGS=4.5V VGS=4.0V Drain Current : ID [A] VGS=3.0V 　 Data Sheet Typical Output Characteristics (Ⅱ) 2 VGS=10.0V VGS=4.5V VGS=4.0V VGS=3.0V Drain Current : ID [A] Ta=25℃ pulsed 1 VGS=2.8V 1 VGS=2.8V VGS=2.5V VGS=2.5V 0 0 0.2 0.4 0.6 0.8 Ta=25℃ pulsed 1 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Static Drain-Source On-State Resistance vs. Drain Current 10000 Ta=25℃ pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 10000 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 1000 VGS=4.0V VGS=4.5V VGS=10V 1000 100 100 10 0.01 0.1 1 Drain Current : ID [A] Static Drain-Source On-State Resistance vs. Drain Current 10000 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.5V pulsed 10 10 0.01 0.1 1 10 Drain Current : ID [A] Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=4V pulsed 1000 Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 1000 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 Drain Current : ID [A] 10 Drain Current : ID [A] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/6 2010.09 - Rev.A MP6K31 　 Forward Transfer Admittance vs. Drain Current Typical Transfer Characteristics VDS=10V pulsed Data Sheet 10 VDS=10V pulsed 1 Forward Transfer Admittance Yfs [S] 1 Drain Currnt : ID [A] Ta=-25℃ Ta=25℃ Ta=75℃ Ta=125℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 0.1 0.01 0.01 0.01 0.1 1 10 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Static Drain-Source On-State Resistance vs. Gate-Source Voltage 600 Ta=25℃ pulsed Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 500 ID=1.0A 400 ID=2.0A Source Current : Is [A] 1 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 300 0.1 200 100 0.01 0.0 0.5 1.0 1.5 2.0 0 0 2 4 6 8 10 Source-Drain Voltage : VSD [V] Gate-Source Voltage : VGS [V] Switching Characteristics 1000 VDD≒30V VGS=10V RG=10Ω Ta=25℃ Pulsed Gate-Source Voltage : VGS [V] 10 Ta=25℃ VDD=30V ID=2A Pulsed Dynamic Input Characteristics tf 100 Switching Time : t [ns] td(off) 8 6 4 10 td(on) tr 2 1 0.01 0.1 1 10 0 0 1 2 3 Total Gate Charge : Qg [nC] 4 5 Drain Current : ID [A] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/6 2010.09 - Rev.A MP6K31 　 Typical Capacitance vs. Drain-Source Voltage Data Sheet Maximum Safe Operating Area Operation in this area is limited by RDS(on) ( VGS = 10V ) PW = 100μs 10 Drain Current : ID [ A ] 1000 Ta=25℃ f=1MHz VGS=0V Capacitance : C [pF] 100 Ciss PW = 1ms 1 PW = 10ms 0.1 DC Operation Ta=25℃ Single Pulse (1Unit) Mounted on a ceramic board. （30mm x 30mm x 0.8mm) 0.1 1 10 100 Coss 10 Crss 1 0.01 0.1 1 10 0.01 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [ V ] Normalized Transient Thermal Resistance v.s. Pulse Width Ta=25℃ Single Pulse Normalized Transient Thermal Resistance : r（t） Mounted on a ceramic board. （30mm × 30mm × 0.8mm) Rth(ch-a)=89.3℃/W (1Unit) Rth(ch-a)(t)=r(t)×Rth(ch-a) 1 0.1 0.01 0.001 0.0001 0.01 1 100 Pulse width ： Pw （ s ） www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/6 2010.09 - Rev.A MP6K31  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG VGS ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 6/6 2010.09 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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