MP6M12

Data Sheet 4V Drive Nch + Pch MOSFET MP6M12  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). Dimensions (Unit : mm) MPT6 (Duel) (6) (5) (4) (1) (2) (3)  Application Switching Inner circuit (6) (5) ∗1 (4)  Packaging specifications Type MP6M12 Package Code Basic ordering unit (pieces) Taping TCR 1000  (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Total power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS Limits Tr1 : N-ch Tr2 : P-ch 30 ±20 5.0 30 ±20 5.0 12 1.6 12 Unit V V A A A A W / TOTAL W / ELEMENT C C Continuous Pulsed Continuous Pulsed VGSS ID IDP Is Isp PD Tch Tstg *1 12 1.6 12 *1 *2 2.0 1.4 150 55 to 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.10 - Rev.A MP6M12  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * * Min. 30 1.0 2.5 - Typ. 30 40 45 250 90 45 6 27 26 5 4.0 1.2 1.2 Max. ±10 1 2.5 42 56 63 - Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=5.0A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=5.0A, VGS=4.5V ID=5.0A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=5.0A VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 15V VGS=10V RL=6 RG=10 ID=5.0A VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=5.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.10 - Rev.A MP6M12  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * * Min. 30 1.0 2.5 - Typ. 40 55 60 800 120 110 10 25 80 65 8.4 3.0 3.5 Max. ±10 1 2.5 56 77 84 - Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=4.5A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=2.5A, VGS=4.5V ID=2.5A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=4.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 15V VGS=10V RL=6.0 RG=10 ID=4.5A VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=4.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.10 - Rev.A MP6M12 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 5 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V Fig.1 Typical Output Characteristics ( I ) Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (II) 5 VGS= 2.5V 4 DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V 4 DRAIN CURRENT : ID[A] 3 VGS= 2.5V 3 2 2 1 VGS= 2.0V 0 0 0.2 0.4 0.6 0.8 1 1 VGS= 2.0V Ta=25°C Pulsed 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical Transfer Characteristics 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW ] VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( I ) Ta=25°C Pulsed DRAIN CURRENT : ID[A] 1 0.1 100 . VGS= 4.0V VGS= 4.5V VGS= 10V 0.01 0.001 0 1 2 3 10 0.1 1 DRAIN-CURRENT : ID[A] 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (II) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW ] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current (III) 1000 VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 DRAIN-CURRENT : ID[A] 10 10 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/10 2011.10 - Rev.A MP6M12 　 Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (IV) 1000 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW ] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 Fig.8 Forward Transfer Admittance vs. Drain Current VDS= 10V Pulsed 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN-CURRENT : ID[A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mW ] 80 100 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed ID= 2.5A SOURCE CURRENT : Is [A] 1 ID= 5.0A 60 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 40 20 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 5 GATE-SOURCE VOLTAGE : VGS[V] 10 Fig.11 Switching Characteristics 1000 td(off) tf SWITCHING TIME : t [ns] Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] 8 100 6 td(on) 10 tr 4 Ta=25°C VDD= 15V ID= 5.0A RG=10Ω Pulsed 0 2 4 6 8 10 2 1 0.01 0.1 1 10 0 DRAIN-CURRENT : ID[A] TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/10 2011.10 - Rev.A MP6M12 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Area 100 1000 Ciss Operation in this area is limited by RDS(ON) (VGS=10V) 10 DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] PW =100us 100 Crss Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 1 PW = 1ms PW =10ms 0.1 Ta = 25°C Single Pulse : 1Unit Mounted on a ceramic board 0.01 0.1 1 10 100 DC operation DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 DRAIN-SOURCE VOLTAGE : VDS[V] NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 0.01 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.10 - Rev.A MP6M12 〈Tr.2(Pch)〉 4.5 4 3.5 DRAIN CURRENT : -ID[A] 3 2.5 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -VDS[V] VGS= -2.5V VGS= -4.5V VGS= -4.0V VGS= -10V VGS= -3.0V Ta=25°C Pulsed 　 Data Sheet Fig.1 Typical Output Characteristics(Ⅰ) 4.5 4 3.5 DRAIN CURRENT : -ID[A] 3 2.5 2 1.5 1 0.5 0 0 Fig.2 Typical Output Characteristics(Ⅱ) VGS= -3.0V VGS= -2.8V Ta=25°C Pulsed VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -2.8V VGS= -2.5V 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.3 Typical Transfer Characteristics 10 VDS= -10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V DRAIN CURRENT : -ID[A] 0.1 100 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= -10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 VGS= -4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/10 2011.10 - Rev.A MP6M12 　 Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -4.0V Pulsed 10 Fig.8 Forward Transfer Admittance vs. Drain Current VDS= -10V Pulsed 100 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : -Is [A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 ID= -2.5A 80 ID= -4.5A 60 Ta=25°C Pulsed 1 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 40 20 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] 0 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Switching Characteristics 1000 VDD≒-15V VGS=-10V RG=10W Ta=25°C Pulsed 10 Fig.12 Dynamic Input Characteristics tf td(off) SWITCHING TIME : t [ns] 100 GATE-SOURCE VOLTAGE : -VGS [V] 8 6 tr 10 td(on) 4 Ta=25°C VDD= -15V ID= -4.5A Pulsed 2 1 0.01 0.1 1 10 DRAIN CURRENT : -ID [A] 0 0 5 10 15 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/10 2011.10 - Rev.A MP6M12 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Area 100 10000 Ta=25°C f=1MHz VGS=0V CAPACITANCE : C [pF] Ciss 10 DRAIN CURRENT : -ID [ A ] Operation in this area is limited by RDS(on) (VGS = -10V) PW = 100μs 1000 1 PW = 1ms PW = 10ms 100 Crss Coss 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC Operation 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] 0.01 100 DRAIN-SOURCE VOLTAGE : -VDS [ V ] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 0.01 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W 0.01 1 100 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.10 - Rev.A MP6M12  Measurement circuits Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS VGS Qgs Qg Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 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