MP6M14

Data Sheet 4V Drive Nch + Pch MOSFET MP6M14  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Low voltage drive(4V drive). Dimensions (Unit : mm) MPT6 (Duel) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Type MP6M14 Package Code Basic ordering unit (pieces) Taping TR 1000  Inner circuit (6) (5) ∗1 (4) ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits Tr1 : N-ch Tr2 : P-ch 30 20 8.0 18 1.6 18 2.0 1.4 150 55 to 150 30 20 6 18 1.6 18 Unit V V A A A A W / TOTAL W / ELEMENT C C Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 *1 *2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.10 - Rev.A MP6M14  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) RDS (on) l Yfs l Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min. 30 1.0 4.5 - Typ. 18 21 23 470 170 80 8 30 39 9 7.3 1.5 2.9 Max. 10 1 2.5 25 29 32 - Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=8.0A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=8.0A, VGS=4.5V ID=8.0A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=8.0A VDS=10V VGS=0V f=1MHz VDD 15V, ID=4.0A VGS=10V RL=3.75 RG=10 VDD 15V, ID=8.0A VGS=5V Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=8.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.10 - Rev.A MP6M14  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 4.0 - Typ. 27 40 46 1040 160 135 9 15 96 52 10.4 2.8 3.7 Max. 10 1 2.5 38 56 64 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=6.0A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=3.0A, VGS=4.5V ID=3.0A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=6.0A VDS=10V VGS=0V f=1MHz VDD 15V, ID=3.0A VGS=10V RL=5 RG=10 VDD 15V, ID=6.0A VGS=5V Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=6.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.10 - Rev.A MP6M14 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics (Ⅰ) 8 VGS=3.0V 7 6 Drain Current : ID [A] 5 4 3 2 VGS=2.5V 1 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] VGS=10.0V VGS=4.5V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 8 7 6 Drain Current : ID [A] VGS=10.0V VGS=4.5V VGS=4.0V 5 VGS=3.0V 4 3 2 1 VGS=2.0V 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] VGS=2.8V VGS=2.5V Ta=25°C Pulsed VGS=4.0V VGS=2.8V Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 VGS=4.0V VGS=4.5V VGS=10V 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/10 2011.10 - Rev.A MP6M14 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 Forward Transfer Admittance Yfs [S] 10 Drain Currnt : ID [A] 100 VDS=10V pulsed Fig.8 Typical Transfer Characteristics 1 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 Ta=25°C Pulsed 40 ID=4.0A 10 Source Current : Is [A] 30 ID=8.0A 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 20 0.1 10 0.01 0.0 0.5 1.0 1.5 2.0 0 0 2 4 6 8 10 Source-Drain Voltage : VSD [V] Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 1000 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 10 Ta=25°C VDD=15V ID=8A Pulsed Fig.12 Dynamic Input Characteristics tf 100 Switching Time : t [ns] 8 Gate-Source Voltage : VGS [V] 6 td(on) 10 4 2 tr 1 0.01 0.1 1 Drain Current : ID [A] 10 100 0 0 5 10 15 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/10 2011.10 - Rev.A MP6M14 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V Coss 1000 Drain Current : ID [ A ] 10 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) （ VGS = 10V ） PW = 100μs Capacitance : C [pF] 1 PW = 1ms PW = 10ms Ciss 100 Crss 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) DC Operation 10 0.01 0.1 1 10 100 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 0.001 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.0001 0.0001 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.10 - Rev.A MP6M14 〈Tr.2(Pch)〉 Fig.1 Typical Output Characteristics (Ⅰ) 6 VGS=-10.0V VGS=-4.5V 5 VGS=-4.0V VGS=-3.5V Drain Current : -ID [A] 4 VGS=-3.0V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 6 VGS=-3.0V 5 VGS=-2.8V Ta=25°C Pulsed Drain Current : -ID [A] 4 VGS=-10.0V VGS=-4.5V VGS=-4.0V VGS=-3.5V 3 VGS=-2.8V 2 3 2 VGS=-2.5V 1 VGS=-2.5V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V] 1 0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-10V pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 VGS=-4.0V VGS=-4.5V VGS=-10V 100 10 10 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 100 10 10 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/10 2011.10 - Rev.A MP6M14 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=-10V pulsed 10 Forward Transfer Admittance Yfs [S] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 VDS=-10V pulsed Fig.8 Typical Transfer Characteristics 10 Drain Currnt : -ID [A] 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 1 0.01 0.1 0.01 0.001 0.1 1 Drain Current : -ID [A] 10 100 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : -VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 200 Ta=25°C Pulsed Source Current : -IS [A] 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] ID=-3.0A 100 ID=-6.0A 0.1 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : -VSD [V] 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics 1000 VDD≒-15V VGS=-10V RG=10Ω Ta=25°C Pulsed 12 Fig.12 Dynamic Input Characteristics 10 Gate-Source Voltage : -VGS [V] tf Switching Time : t [ns] 100 td(off) Ta=25°C VDD=-15V ID=-6.0A Pulsed 8 6 td(on) 10 4 tr 2 1 0.01 0.1 1 Drain Current : -ID [A] 10 100 0 0 5 10 15 20 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/10 2011.10 - Rev.A MP6M14 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V 10 Drain Current : -ID [ A ] Capacitance : C [pF] 1000 Ciss Coss 100 Crss 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = -10V) PW = 100μs PW = 1ms 1 PW = 10ms 0.1 Ta=25°C Single Pulse:1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) DC Operation 10 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V] 0.01 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.10 - Rev.A MP6M14  Measurement circuits Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS VGS Qgs Qg Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 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