Midium Power Transistors (-50V / -3A)
MP6T13
Structure PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage V CE (sat) = -0.4V (Max.) (I C / I B= -1A / -50mA) 2) High speed switching Applications Low Frequency Amplifier Driver Packaging specifications Type Package MPT6 Code TR Basic ordering unit (pieces) 1000
(1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector
Dimensions (Unit : mm)
MPT6
(Dual)
(6)
(5)
(4)
(1)
(2)
(3)
Inner circuit (Unit : mm)
(6) (5) (4)
Tr.2
Absolute maximum ratings (Ta=25°C)
Tr.1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
*1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board
Symbol VCBO
Limits
Unit V V V A A W/Total W/Element C C
DC Pulsed
-50 -50 VCEO VEBO -6 IC -3 ICP *1 -6 *2 PD 2.0 1.4 PD *2 Tj 150 Tstg -55 to 150
(1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1
Emitter Base Collector Emitter Base Collector
(1)
(2)
(3)
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1/5
2010.12 - Rev.A
MP6T13
Electrical characteristics (Ta=25°C)
Data Sheet
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time
*1 Pulsed *2 See switching time test circuit
Symbol BVCEO BVCBO BVEBO ICBO IEBO * VCE(sat)1 hFE fT *1
Min. -50 -50 -6 180 -
Typ. -200 300 24 45 250 35
Max. -1 -1 -400 450 -
Unit V V V A A MHz pF ns ns ns
Conditions IC= -1mA IC= -100μA IE= -100μA VCB= -50V VEB= -4V VCE= -3V, I C= -50mA VCE= -10V IE=500mA, f=100MHz VCB= -10V, I E=0A f=1MHz IC= -1.5A, I B1= -150mA, ~ _ IB2=150mA, VCC -10V
mV IC= -1A, I B= -50mA
Cob ton *2 tstg *2 t f *2
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2/5
2010.12 - Rev.A
MP6T13
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics -5.0mA -0.5 -2.5mA -4.0mA -3.0mA
Data Sheet
Fig.2 DC Current Gain vs. Collector Current ( I )
1000 Ta=25°C
-0.4 COLLECTOR CURRENT : IC[A]
-2.0mA DC CURRENT GAIN : hFE
-0.3
-1.5mA
100
VCE= -5V -3V
-0.2
-1.0mA
-0.1
IB=-0.5mA
0.0 0 -0.5 -1 -1.5 -2
10 -1 -10 -100 -1000 -10000
COLECTOR TO EMITTER VOLTAGE : VCE[V]
COLLECTOR CURRENT : IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) -1 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
Fig.3 DC Current Gain vs. Collector Current ( II ) 1000 VCE= -3V
Ta=25°C
DC CURRENT GAIN : hFE
-0.1
100
Ta=125°C 75°C 25°C -40°C
-0.01
IC/IB=50 20 10
10 -1 -10 -100 -1000 -10000
-0.001 -1 -10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) -1 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] -10000 VCE= -3V
COLLECTOR CURRENT : IC[mA] Fig.6 Ground Emitter Propagation Characteristics
COLLECTOR CURRENT : IC[mA]
-1000
Ta=125°C 75°C 25°C -40°C
-0.1
-100
Ta=125°C -0.01 75°C 25°C -40°C
-10
IC/IB=20 -0.001 -1 -10 -100 -1000 -10000 -1 0 -0.5 -1 -1.5
COLLECTOR CURRENT : IC[mA]
BASE TO EMITTER VOLTAGE : VBE[V]
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3/5
2010.12 - Rev.A
MP6T13
Data Sheet
Fig.7 Emitter Input Capacitance vs. Emitter -Base Voltage Collector Output Capacitance vs. Collector-Base Voltage 1000 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Ta=25°C f=1MHz IE=0A IC=0A 1000
Fig.8 Gain Bandwidth Product vs. Emitter Current
Ta=25°C VCE= -10V TRANSITION FREQUENCY : fT[MHz]
Cib 100
100
Cob 10
1 -0.1 -1 -10 -100 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] Fig.9 Safe Operating Area -10 1ms COLLECTOR CURRENT : IC[A] 10ms
10 10 100 EMITTER CURRENT : IE[mA] 1000
-1
100ms
-0.1
DC (Mounted on a ceramic board)
Ta=25°C W hen one element operated Single non repetitive pulse -0.01 -0.1 -1 -10 -100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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4/5
2010.12 - Rev.A
MP6T13
Switching time test circuit RL=6.8Ω VIN Pw IB1 IC
Data Sheet
VCC
_ ~ -10V
_ Pw ~ 50μs
DUTY CYCLE≦1%
IB2
IB2 BASE CURENT WAVEFORM
IB1
ton 90% COLLECTOR CURRENT WAVEFORM
tstg
tf
IC
10%
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5/5
2010.12 - Rev.A
Notice
Notes
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